Results 111 to 120 of about 231,050 (376)
Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications
Inspired by the unique, thickness-dependent energy band structure of 2D materials, we study the electronic and optical properties of the photodetector based on the as-exfoliated lateral multilayer/monolayer MoS2 heterojunction.
Mengxing Sun+5 more
doaj +1 more source
In this paper, a built‐in electric field (BEF) strategy is proposed to fabricate NiFe‐LDH/antimonene heterostructure as bifunctional electrocatalysts for oxygen evolution reaction (OER) and hydrogen evolution reaction (HER). The formed BEF generates a local potential that reduces the potential for the formation of β‐NiOOH, thereby enabling ultra‐low ...
Jingkun Wang+11 more
wiley +1 more source
In this work, the high temperature and trap sates characteristics have been investigated for Al0.35Ga0.65N/GaN/Al0.25Ga0.75N double heterojunction. By using high-Al AlGaN barrier and back barrier layers, the maximum current at 200 ℃ is reduced by 35 ...
Shenglei Zhao+7 more
doaj
Activation gaps for the fractional quantum Hall effect: realistic treatment of transverse thickness
The activation gaps for fractional quantum Hall states at filling fractions $\nu=n/(2n+1)$ are computed for heterojunction, square quantum well, as well as parabolic quantum well geometries, using an interaction potential calculated from a self ...
+15 more
core +1 more source
Tuning the Hydrogen Bond Network Inside the Helmholtz Plane for Industrial Hydrogen Evolution
The hydrogen bond network within the Helmholtz plane, a key component affecting the hydrogen evolution kinetics, remains far from having a consensus owing to the lack of fundamental understanding. Herein, it is discovered that the introduction of the atomic electric field generated by the weak Ru─Ga bonds can further improve the proportion of 4 ...
Xinyu Chen+9 more
wiley +1 more source
Graphene quantum dots (GQDs) possess the photosensitive absorption for photoelectrochemical hydrogen evolution owing to special band structures, whereas they usually confront with photo-corrosion or undesired charge recombination during ...
Lin Zhang+6 more
doaj +1 more source
We have investigated ab initio the existence of localized states and resonances in abrupt GaAs/Si/GaAs (110)- and (100)-oriented heterostructures incorporating 1 or 2 monolayers (MLs) of Si, as well as in the fully developed Si/GaAs (110) heterojunction.
A. Baldereschi+11 more
core +1 more source
Ultrasoft Iontronics: Stretchable Diodes Enabled by Ionically Conductive Bottlebrush Elastomers
This work introduces a solvent‐free, ultrasoft, and stretchable ionic diode based on oppositely charged bottlebrush elastomers (BBEs). The BBE diode exhibits an ultralow Young's modulus (<23 kPa), a high rectification ratio of 46, and stretchability over 400%.
Xia Wu+6 more
wiley +1 more source
The side‐chain configuration in the bay region of C‐shaped ortho‐benzodipyrrole‐based non‐fullerene acceptors plays a crucial role in their self‐assembly, single‐crystal structures, and optoelectronic properties. The closely correlated molecular structure and performance underscore the importance of minimizing A–A self‐aggregation and enhancing D–A ...
Yung‐Jing Xue+18 more
wiley +1 more source