Results 131 to 140 of about 264,866 (394)
Tuning of defects in ZnO nanorod arrays used in bulk heterojunction solar cells [PDF]
Diana C. Iza +4 more
openalex +1 more source
Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi +11 more
wiley +1 more source
Light‐Induced Entropy for Secure Vision
This work realized a ternary true random number generator by exploiting stochastic traps emerging within multiple junction interfaces, and quantitatively validated the generation of high‐quality random numbers. Furthermore, it successfully demonstrated diverse applications, including AI‐resilient image security, thereby providing a valuable guide for ...
Juhyung Seo +9 more
wiley +1 more source
Interface Magnetoresistance in Manganite-Titanate Heterojunctions [PDF]
Tomofumi Susaki +2 more
openalex +1 more source
Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates [PDF]
Stanislav Tiagulskyi +7 more
openalex +1 more source
Yuan Liu +11 more
openalex +1 more source
Role of the Recombination Zone in Organic Light‐Emitting Devices
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley +1 more source
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu +14 more
wiley +1 more source
Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
This study investigates the electrical properties of the SnO2/SnS2 heterojunction as the interlayer for resistive random access memory (RRAM). In this work, (NH4)4Sn2S6 is used as a source for the production of the heterojunction.
WenBin Liu +4 more
doaj +1 more source
S-scheme heterojunction has garnered significant interest owing to its distinctive band structure and interfacial interaction. In this work, nanosheets-like Bi2O2S0.8F0.4/BiOBr heterojunction photocatalyst with dual surface oxygen vacancies was ...
Xifeng Hou +5 more
doaj +1 more source

