Results 111 to 120 of about 55,287 (317)
Development of a New Electro-thermal Simulation Tool for RF Circuits
, 2008 Thermal interactions set a tremendous challenge for electronic designers, and a device/system can not be considered anymore as purely electrical one, since exists a strong interaction between operating temperature and electrical operating point.
Nowakowski, Jerzy
core
, 2018 2D van der Waals materials are promising for various electronic and optoelectronic devices because of their thickness-dependent mobility and tunable bandgap.
Lee, Jong-Soo +9 more
core +1 more source
Advanced Materials Interfaces, EarlyView.Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
Lateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications
Scientific Reports, 2017 Inspired by the unique, thickness-dependent energy band structure of 2D materials, we study the electronic and optical properties of the photodetector based on the as-exfoliated lateral multilayer/monolayer MoS2 heterojunction.
Mengxing Sun +5 more
doaj +1 more source
Citation: 'heterojunction' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.08825 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms.
openaire +1 more source
Carrier transport properties of the (n)nc-Si : H/(p)c-Si heterojunction
, 2000 Phosphor-doped nano-crystalline silicon ((n))nc-Si:H) films are successfully grown on the p-type (100) oriented crystal silicon ((p) c-Si) substrate by conventional plasma-enhanced chemical vapor deposition method.
Peng YC,Hebei Univ,Coll Elect & Informat Engn,Baoding 071002,Peoples R China. +5 more
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Carrier generation and collection in Zn3P2/InP heterojunction solar cells
Zinc phosphide (Zn3P2) has been lauded as a promising solar absorber material due to its functional properties and the abundance of zinc and phosphorous.
Zamani, Mahdi +16 more
core +1 more source
A Survey of Interlayer Interaction Models for Graphene and Other 2D Materials
Advanced Materials Interfaces, EarlyView.Van der Waals interactions arising from electronic polarization at atomically close interfaces generate corrugated interlayer energy landscapes that govern normal and tangential tractions. This review presents an overview of quantum, atomistic, analytical, and continuum modeling approaches, highlighting their roles across length scales in capturing ...
Gourav Yadav +2 more
wiley +1 more source
Although metallic chalcogenides are deemed as attractive sodium anode materials recently, the electrochemical performance is severely confined by the liability of structural collapse and sluggish ion diffusion kinetics.
Shuaijie Wei (12001650) +9 more
core +1 more source
, 2015 This article reports for the first time the electrical properties of fabricated n-3C-SiC/p-Si heterojunction diodes under external mechanical stress in the [110] direction.
Tanner, Philip +8 more
core +1 more source