Results 121 to 130 of about 20,699 (269)

Band Alignment of Grafted Si/Ge0.89Sn0.11 Heterojunction Determined by X‐Ray Photoelectron Spectroscopy

Advanced Materials Interfaces, EarlyView.
ABSTRACT We investigate the band alignment of a monocrystalline grafted p‐type Si/Ge0.89Sn0.11 heterostructure using X‐ray photoelectron spectroscopy (XPS). The bandgap of the Ge0.89Sn0.11 epilayer of 0.50 eV was first determined and cross‐verified using photoluminescence spectroscopy, infrared transmission, and theoretical calculation.
Yang Liu, Yiran Li, Tsung‐Han Tsai, Sudip Acharya, Yi Lu, Jie Zhou, Samuel A. Haessly, Shui‐Qing Yu, Nanditha M. Dissanayake, Edward K. Huang, Jiarui Gong, Zhenqiang Ma   +11 more
wiley   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

Turning Water Into a Tool: From Degradation Pathways to Functional Engineering in Halide Perovskites

Advanced Materials Technologies, EarlyView.
Water exhibits a threshold‐dependent dual role in lead halide perovskites, acting either as a degradation trigger or as a powerful tool for defect passivation, recrystallization, and structural engineering. This review discusses how controlled water‐mediated interactions govern stability, dimensionality, and optoelectronic performance, providing ...
Raphaella T. S. Gonçalves, Gabriela O. Gera, Aryane Tofanello, Jose A. Souza, Andre L. M. Freitas   +4 more
wiley   +1 more source

Rapid Room‐Temperature Ethanol Sensing in Bi2MoO6/rGO Heterostructures: Weak Adsorption‐Driven Charge Modulation

Advanced Materials Technologies, EarlyView.
This work establishes Bi2MoO6/rGO heterostructures as a mechanism‐guided platform for high‐performance room‐temperature ethanol gas detection by showing that modest adsorption, in conjunction with dynamic interfacial band modulation, enables rapid charge‐transfer.
Sagarika Panda, Savita Mehlawat, Kwanghyeon Jo, Neeraj Dhariwal, Chang Woo Myung, Mohd. Arif, Sung Bum Kang, Amit Sanger   +7 more
wiley   +1 more source

2D Germanane-Based Z-Scheme Heterojunctions for Ultrafast Antibiotic Degradation and Mineralization. [PDF]

Small Sci
Lei Y, Sala X, García-Antón J, Muñoz J.   +3 more
europepmc   +1 more source

Ultrathin and Flexible Organic Light‐Addressable Potentiometric Sensors

Advanced Materials Technologies, EarlyView.
The first ultrathin, fully organic, and flexible light‐addressable potentiometric sensor (LAPS) is demonstrated. With a thickness of only 2.3–2.9 µm, this standalone film offers sensitivity to electrolyte potential and stable performance for over 170 days.
Ami Ichikawa, Yudai Hemmi, Yuanyuan Guo, Georgios Bairaktaris, Carl Frederik Werner, Tomohiko Murayama, Hiroyuki Matsui   +6 more
wiley   +1 more source

ZrO₂-based heterojunction engineering for enhanced visible-light photocatalysis: a review. [PDF]

RSC Adv
Sivakumar S, Samuel EJJ.
europepmc   +1 more source

Printed SWCNT‐Based p–n Junction Thin‐Film Near‐Infrared Photoresistors Enabled by a Sustainable Furan‐Derived π‐Conjugated Polymer

Advanced Materials Technologies, EarlyView.
A sustainable polymer–carbon nanotube bilayer enables efficient near‐infrared photodetection in a simple lateral planar p–n junction thin‐film architecture. Thermal side‐chain cleavage enhances interfacial coupling, shifts the dominant photoresponse from 800 to 1000 nm, and substantially improves device performance.
Jenner H. L. Ngai, Zhao Li, Jianfu Ding, Yuning Li   +3 more
wiley   +1 more source

Predictive modelling and experimental analysis of radiation-resistant MXene-silicon heterojunction solar cells. [PDF]

Discov Nano
Jayan K D, H I E, Prasad S K, Syum GG.
europepmc   +1 more source

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

Advanced Materials Technologies, EarlyView.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob, Solbee Lee, Hansol Jeong, Sabiqun Nahar, Jin Jang   +4 more
wiley   +1 more source