Results 141 to 150 of about 118,273 (367)

Damage Effects and Mechanisms of High-Power Microwaves on Double Heterojunction GaN HEMT

Aerospace
In this paper, simulation modeling was carried out using Sentaurus Technology Computer-Aided Design. Two types of high electron mobility transistors (HEMT), an AlGaN/GaN/AlGaN double heterojunction and AlGaN/GaN single heterojunction, were designed and ...
Zhenyang Ma, Dexu Liu, Shun Yuan, Zhaobin Duan, Zhijun Wu   +4 more
doaj   +1 more source

Origin of Dark Current Robustness in Photomultiplication Organic Photodetectors Enabled by Ionic Conjugated Electron‐Blocking Layers

Advanced Materials, EarlyView.
Ionic conjugated polyelectrolyte electron‐blocking layers enable photomultiplication organic photodetectors with dark current robustness up to −10 V and external quantum efficiencies exceeding 3000%. Fowler–Nordheim tunneling, interfacial dipole, trap density of states, and noise analyses reveal how ionic conjugated polyelectrolytes suppress electron ...
Yelim Kang, Min Hun Jee, Shuai Zhang, Sang Heon Lee, Jung Min Ha, Xingchao Zhao, Xiaoling Ma, Huiseong Shin, Changhwan Shin, Soonyong Lee, Fujun Zhang, Jae Won Shim, Han Young Woo   +12 more
wiley   +1 more source

From Type II to Z-Scheme: A DFT Study of Enhanced Water Splitting in the SGa₂Se/TeMoS Heterojunction

Crystals
Harnessing solar energy for photocatalytic water splitting and hydrogen fuel production necessitates the development of advanced photocatalysts with broad solar spectrum absorption and efficient electron-hole separation.
Fan Yang, Marie-Christine Record, Pascal Boulet   +2 more
doaj   +1 more source

Over 16.7% Efficiency Organic-Silicon Heterojunction Solar Cells with Solution-Processed Dopant-Free Contacts for Both Polarities [PDF]

, 2018
Realization of synchronous improvement in optical management and electrical engineering is necessary to achieve high-performance photovoltaic device. However, inherent challenges are faced in organic-silicon heterojunction solar cells (HSCs) due to the ...
Tang, Jiang, Gao, Pingqi, He, Jian, Wan, Yimao, Ye, Jichun   +4 more
core  

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

RETRACTED: Advances in colloidal quantum dot solar cells: The depleted-heterojunction device [PDF]

Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processibility with quantum size-effect tunability to match absorption with the solar spectrum.
Barkhouse, Aaron R., Konstantatos, Gerasimos, Debnath, Ratan, Nazeeruddin, Mohammad Khaja, Wang, Xihua, Kramer, Illan J., Sargent, Edward H., Pattantyus-Abraham, Andras G., Raabe, Ines, Graetzel, Michael, Levina, Larissa   +10 more
core   +1 more source

Turning Humidity Into Function: Heterojunction Interfaces for Dual‐Mode Removal of Nonpolar Vapors

Advanced Materials Interfaces, EarlyView.
A wire‐grown MIL–88B(Fe)@Fe3(PO4)2 heterojunction converts ambient humidity into a functional mediator for nonpolar VOC purification. Water forms a hydration layer that enhances cyclohexane uptake while simultaneously promoting •OH generation, resulting in synergistic adsorption–photocatalysis under humid conditions.
Jinwook Lee, Jooyoun Kim
wiley   +1 more source

Band Alignment and Composition of the Buried TiO2/GaInP Interface

Advanced Materials Interfaces, EarlyView.
Buried TiO2$\text{TiO}_2$/GaInP interfaces formed by mild plasma‐enhanced ALD are shown to be largely insensitive to the initial GaInP surface condition. Angle‐dependent photoelectron spectroscopy reveals similar interfacial chemistry and band alignment for phosphorus‐rich and naturally oxidized surfaces, demonstrating a robust pathway for reproducible
David Ostheimer, Sahar Shekarabi, Julius Kühne, Mohammad Amin Zare Pour, Kai Daniel Hanke, Chris Yannic Bohlemann, Juliane Koch, Oliver Bienek, Agnieszka Paszuk, Wolfram Jaegermann, Ian D. Sharp, Thomas Hannappel   +11 more
wiley   +1 more source

Consideration and detection of spin‐dependent transport across semiconductor heterojunction [PDF]

, 2006
J. Hayafuji, Tsuyoshi Kondo, H. Munekata
openalex   +1 more source

Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface

Advanced Materials Interfaces, EarlyView.
This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu, Tsung‐Han Tsai, Qingxiao Wang, Haicheng Cao, Jie Zhou, You Jin Koo, Chenyu Wang, Yang Liu, Yuyue Hao, Michael Eller, Connor Bailey, Stephanie Liu, Nicholas J. Tanen, Zhiyuan Liu, Mingtao Nong, Robert M. Jacobberger, Tien Khee Ng, Katherine Fountaine, Vincent Gambin, Boon S. Ooi, Xiaohang Li, Zhenqiang Ma   +21 more
wiley   +1 more source