Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy [PDF]
, 2008 X-ray photoelectron spectroscopy has been used to measure the valence band offset at the ZnO/GaAs heterojunction interface. The valence band offset is determined to be 2.39 +/- 0.23 eV.
Zhang, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangpanf@semi.ac.cn +11 more
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Understanding Interfacial Photoswitching Mechanisms in Atomically‐Thin TMD‐Spiropyran Hybrids
Advanced Materials Technologies, EarlyView.Photochromic molecules can effectively modulate the optoelectronic properties of atomically thin transition metal dichalcogenide semiconductors. Spiropyran that switches its chemical configuration upon alternating UV and visible irradiation enables light‐programmable optoelectronic devices.
Sewon Park +8 more
wiley +1 more source
Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires [PDF]
, 2010 The electronic properties of wurtzite/zinc-blende (WZ/ZB) heterojunction GaN are investigated using first-principles methods. A small component of ZB stacking formed along the growth direction in the WZ GaN nanowires does not show a significant effect on
Wang ZG (Wang Zhiguo) +4 more
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Turning Water Into a Tool: From Degradation Pathways to Functional Engineering in Halide Perovskites
Advanced Materials Technologies, EarlyView.Water exhibits a threshold‐dependent dual role in lead halide perovskites, acting either as a degradation trigger or as a powerful tool for defect passivation, recrystallization, and structural engineering. This review discusses how controlled water‐mediated interactions govern stability, dimensionality, and optoelectronic performance, providing ...
Raphaella T. S. Gonçalves +4 more
wiley +1 more source
Advanced Materials Technologies, EarlyView.This work establishes Bi2MoO6/rGO heterostructures as a mechanism‐guided platform for high‐performance room‐temperature ethanol gas detection by showing that modest adsorption, in conjunction with dynamic interfacial band modulation, enables rapid charge‐transfer.
Sagarika Panda +7 more
wiley +1 more source
Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)
, 2006 Tetsuya Hayashi +5 more
openalex +1 more source
Design of a 10 kV and 16.5 GW cm−2 NiO/β-Ga2O3 Heterojunction Diode on a Complete Wafer with a Positive Beveled-Mesa [PDF]
, 2023 Jianfeng He +6 more
openalex +1 more source
Ultrathin and Flexible Organic Light‐Addressable Potentiometric Sensors
Advanced Materials Technologies, EarlyView.The first ultrathin, fully organic, and flexible light‐addressable potentiometric sensor (LAPS) is demonstrated. With a thickness of only 2.3–2.9 µm, this standalone film offers sensitivity to electrolyte potential and stable performance for over 170 days.
Ami Ichikawa +6 more
wiley +1 more source
Migration of constituent atoms and interface morphology in a heterojunction between CdS and CuInSe2 single crystals [PDF]
, 1999 Y. L. Soo +5 more
openalex +1 more source