Results 141 to 150 of about 185,261 (290)

Hybrid quadrupole plasmon induced spectrally pure ultraviolet emission from a single AgNPs@ZnO:Ga microwire based heterojunction diode. [PDF]

Nanoscale Adv, 2020
Zhou X, Jiang M, Wu Y, Ma K, Liu Y, Wan P, Kan C, Shi D.   +7 more
europepmc   +1 more source

Heterointerface Seeding Accelerates Bi0/Bi3+ Phase Conversion for Ultrafast Aqueous Alkaline Batteries

Advanced Science, EarlyView.
An N‐doped carbon‐confined Bi/Bi2O3 heterostructure enables ultrafast and reversible Bi0/Bi3+ phase conversion through heterointerface seeding. The pre‐established Bi/Bi2O3 interfaces provide nucleation‐active sites for heterophase regrowth, while the N‐C shell promotes electron transport and structural stability, overcoming kinetic limitations in ...
Jingwen Ma, Teng Wang, Jiaye Ye, Tong Yang, Zhongguo Zhao, Yuanyou Peng, Meimei Yu, Chaojiang Fan, Wenhu Li, Hongxia Wang   +9 more
wiley   +1 more source

New computational method to estimate the effect of roughness on scattering loss and its implementation in a hybrid heterojunction optical modulator

, 2014
In the past year, there has been an advancement in the development of optical active and passive Silicon-On-Insulator for Photonic Integrated Circuits (PICs) applications. Following the continuous miniaturisation trend in this technology the study of the
Jaberansary, Ehsan
core   +1 more source

Opposite Trap‐State Evolution Pathways Govern Endurance and Retention Failure in Amorphous Chalcogenide Memory

Advanced Science, EarlyView.
GeSbSe selector‐only memory devices are investigated through physical and electrical analyses to reveal opposite trap‐state evolution pathways governing reliability degradation. Endurance cycling drives Se migration, transitioning traps from deep to shallow states.
Byung Jun Lee, Won Hee Jeong, Min Kyu Yang, Gun Hwan Kim   +3 more
wiley   +1 more source

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong‐Wook Kim   +8 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source

Electroluminescent MgZnO/ZnO Heterojunction Diode

Applied Science and Convergence Technology, 2023
Byeong-Hyeok Kim, Jang-Won Kang
openaire   +1 more source

Green‐Synthesized Bi‐Doped PEI N‐GQDs Enabling Long‐Term Stable Silicon Heterojunction Photodetectors

Advanced Electronic Materials, EarlyView.
Green‐engineered BiNPs&PEI N‐GQDs enable dual‐emission p‐Si Schottky photodetectors with strong photoresponse, long‐term stability, and a simple scalable fabrication strategy, offering a promising route for sustainable optoelectronic and photosensing applications.
Zeynep Berktaş, Arun Kumar, Salar H. Sedani, Mustafa Yıldız, İlker Yıdız, Antonio Di Bartolomeo, Elif Orhan   +6 more
wiley   +1 more source

Balancing Carrier Cooling in InN/GaN Quantum Wells via Point Defect Engineering

Advanced Electronic Materials, EarlyView.
Nitrogen vacancies in the InN/GaN interface regulate carrier relaxation in polar quantum wells by reconstructing the conduction‐band decay pathway and enhancing nonadiabatic coupling. No deep midgap state is introduced in the neutral single‐vacancy model, enabling faster hot‐electron cooling, improved electron‐hole balance, reduced electron overflow ...
Yuxin Yang, Zhiming Shi, Zi‐Hui Zhang, Su‐Huai Wei, Xiaojuan Sun, Dabing Li   +5 more
wiley   +1 more source