Results 121 to 130 of about 185,261 (290)
Electrical Properties of n-CdO/p-Si Heterojunction Diode Fabricated by Sol Gel
, 2011 n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated.
S.Aksoy, Y.Caglar
core +1 more source
Advanced Science, EarlyView.Epitaxial integration of a C1N1 phase onto KPHI creates a dyadic charge‐transfer nanostructure with strong interfacial electronic coupling. This architecture drives directional electron transfer from KPHI to C1N1, enabling efficient cocatalyst‐free solar H2O2 production.
Haijian Tong +3 more
wiley +1 more source
AIP AdvancesUltraviolet (UV) irradiation has a significant impact on enhancing the performance of sensors. Currently, there is still an urgent need for devices that are simple and easy to fabricate.
Qiuen Li +5 more
doaj +1 more source
The characteristics of ZnS/Si heterojunction diode fabricated by thermionic vacuum arc
, 2017 ZnS/p-Si heterojunction diode has been successfully fabricated by depositing the ZnS thin films on p-type Si substrates using thermionic vacuum arc technique (TVA).
core +1 more source
Advanced Science, EarlyView.As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee +3 more
wiley +1 more source
Unveiling a Near‐Total Rear Passivation for High Performance of Ultra‐Thin ACIGS
Advanced Science, EarlyView.Ultra‐thin solar cells of (Ag,Cu)(In,Ga)Se2 (ACIGS) suffer from rear interface recombination, limiting their performance. To tackle it, a full coverage plasma enhanced chemically vapor‐deposited 8 nm porous SiOx passivation layer was implemented and evaluated. It is shown that a combination of the near‐complete passivation from silica and the formation
Xavier L. Pinheiro +7 more
wiley +1 more source
Design, Simulation and Analysis of Novel Types of Unipolar Diodes [PDF]
, 2013 With the growing demand of low and medium voltage switch-mode power supplies (SMPS) for use in the state-of-the-art integrated circuits, the development of output rectifiers with low forward voltage drop and low reverse leakage current becomes essential.
Vemulapati, Umamaheswara Reddy
core
An investigation of Zn/ZnO:Al/p-Si/Al heterojunction diode by sol-gel spin coating technique
, 2014 Present study shows the structural, morphological, optical characterization of sol-gel spin coated ZnO:Al film and investigation of device efficiency of Zn/ZnO:Al/p-Si/Al heterojunction diode structure.
DUMAN, S. +5 more
core +1 more source
From Sensing Mechanisms to System Co‐Design: Graphene‐Based Sensors and Readout Circuits
Advanced Science, EarlyView.This review establishes a unified PS–EQ–RF framework linking graphene sensing mechanisms, native electrical outputs, and output‐specific readout circuits. Voltage‐, current‐, resistance‐, and capacitance‐type sensing systems are systematically classified to guide architecture selection, low‐noise design, system co‐design, and practical integration ...
Jinduo Zhang +5 more
wiley +1 more source
PbS quantum dot enhanced p-CIGS/n-Si heterojunction diode
, 2019 Nanoparticles enable novel approaches to light converter devices that may allow preventing the energy loss related to spectral mismatch, by enlarging the absorption range from UV to IR.
Ercelebi, Cigdem +2 more
core +1 more source