Results 111 to 120 of about 4,656 (298)

NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe₂ heterojunction diode. [PDF]

Sci Rep, 2021
Hussain M, Jaffery SHA, Jaffery SHA, Ali A, Nguyen CD, Aftab S, Riaz M, Abbas S, Hussain S, Seo Y, Jung J.   +10 more
europepmc   +1 more source

Retinomorphic Visual Processing Enabled by Contact‐Engineered IGZO Optoelectronic Synaptic Memtransistors

Advanced Science, EarlyView.
Here, we present an optoelectronic synaptic memtransistor (OSMT) integrating photoresponsive IGZO with contact‐engineered HfO2, enabling electrically and optically tunable synaptic weights. The device demonstrates broad range of tunable conductance states and array‐level image processing, highlighting its potential for intelligent machine vision ...
Donghyun Kang, San Nam, Dayul Nam, In‐Soo Kim, Myung‐Gil Kim, Sung Kyu Park, Yong‐Hoon Kim   +6 more
wiley   +1 more source

Impedance Spectroscopy of Nanostructure $p-ZnGa_{2}Se_{4}//n-Si$ Heterojunction Diode [PDF]

, 2011
The impedance characteristics of the nanostructure $p-ZnGa_2Se_4//n-Si$ heterojunction diode were investigated by impedance spectroscopy method in the temperature range (303-503 K) and the frequency range (42 Hz-5 MHz).
Fadel, M., Yakuphanoglu, F., Farooq, W., Yahia, I., Shenouda, S., Sakr, G.   +5 more
core   +1 more source

Synergistic Interface Engineering via Buffer Layer and UVO Treatment for High‐Performance PbS Quantum Dot Near‐Infrared Photodiodes

Advanced Science, EarlyView.
A dual‐interface strategy combining a solvent‐orthogonal Poly‐TPD buffer with UV–ozone tuning of PbS‐EDT reconstructs interfacial energetics and defect chemistry in PbS CQD photodiodes. The optimized interface suppresses shunt‐ and trap‐related leakage, reduces noise, and enables high‐detectivity near‐infrared detection with imaging capability ...
Chuan Wei, Jun Han, Ning Feng, Li Yan, Hao Sun, Yuanhong Gao, Meili Xu, Guodan Wei, Hong Meng   +8 more
wiley   +1 more source

ลักษณะเฉพาะของกระแส-แรงดันไฟฟ้าที่ขึ้นกับอุณหภูมิของไดโอดรอยต่อวิวิธพันธุ์ CdZnS/CuAlO2 (TEMPERATURE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF CdZnS/CuAlO2 HETEROJUNCTION DIODE) [PDF]

, 2012
ในงานวิจัยนี้ได้ทำการประดิษฐ์รอยต่อวิวิธพันธุ์ CdZnS/CuAlO2 โดยการระเหยฟิล์มบาง CdZnS ด้วยความร้อนเคลือบบนแผ่นรองรับที่เป็นเซรามิกส์ของ CuAlO2 การแอนนีลในบรรยากาศก๊าซไนโตรเจนบริสุทธิ์ที่อุณหภูมิ 350 องศาเซลเซียส เป็นเวลา 60 นาที จะทำให้ได้รอยต่อวิวิธพันธุ
นพรุจิกุล, อดิศร, อริยฤทธิ์, อัฏฐพร, วงษ์เจริญ, งามนิตย์, แก้วแดง, ฐิตินัย, วงษ์เจริญ, ทิพรัตน์, ภู่รักษ์เกียรติ, ชัยสิงห์   +5 more
core  

Intrinsic Dual‐Phase Regulated GeSe2 Nanoparticles Triggered by Ball‐Milling Treatment for Photonic Multi‐Valued Logic Circuits

Advanced Science, EarlyView.
We report the solid‐state ball milling, a traditional, reliable, mass‐productive material processing, to prepare the air‐stable and dual‐phase GeSe2‐x nanoparticles with extended photodetection feasibility toward optical‐wavelength regions. We further display photonic multi‐valued logic (MVL) circuit through the employment of a hybrid PMMA/GeSe2‐x ...
An‐Ting Tsai, Chun‐Jen Wang, Pin‐Chao Liao, Chin Shan Lue, Chia‐Nung Kuo, Le Vo Phuong Thuan, Po‐Hsuan Hsiao, Chang‐Hyun Kim, Chia‐Yun Chen   +8 more
wiley   +1 more source

Study on variable capacitance diode of (p)nc-Si : H/(n)c-Si heterojunction [PDF]

, 2003
Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system.
Wei WS, Wang TM, Wei WS,Beijing Univ Aeronaut & Astronaut,Sch Sci,Ctr Mat Phys & Chem,Sch Sci,Beijing 100083,Peoples R China., Li GH, Zhang CX, Li YX   +5 more
core  

Systematic Phosphorus‐Driven Structural and Field Engineering of n‐a‐Si:H for Flexible n‐a‐Si:H/Te Near‐Infrared Photodetectors

Advanced Science, EarlyView.
Our research elucidates the systematic evolution of the microstructure and optoelectronic properties of n‐a‐Si:H governed by the phosphine dilution ratio. Optimally phosphorus‐doped n‐a‐Si:H is integrated with Te to form a flexible heterojunction, enabling high‐performance near‐infrared photodetectors.
Kyeong‐jin Hyun, Soo‐Won Choi, Byeongjin Park, Hee‐Won Jang, Jongwon Yoon, Yonghun Kim, Woon Ik Park, Jung‐Dae Kwon   +7 more
wiley   +1 more source

A comparative study of electrical and opto-electrical properties of a few-layer p-WSe₂/n-WS₂ heterojunction diode on SiO₂ and h-BN substrates. [PDF]

RSC Adv, 2021
Sharma PR, Gautam P, Afzal AM, Park B, Noh H.   +4 more
europepmc   +1 more source

Nanoscale Optical Inhomogeneities From Compositional Segregation Within Individual GaN‐on‐Si Quantum Wells

Advanced Science, EarlyView.
This work visualizes local variations in luminescence and relates them to nanoscale chemical inhomogeneities in single InxGa1−xN quantum wells. We demonstrate that the elemental segregation is only inherent to quantum wells with high indium content. Density functional theory shows this to be the result of strain‐induced phase stabilization, explaining ...
Jing‐Yang Chung, Tara P. Mishra, Zackaria Mahfoud, Thomas E. Gage, Jianguo Wen, Katherine P. Rice, Isabelle Martin, Li Zhang, Govindo J. Syaranamual, Stephen J. Pennycook, Silvija Gradečak, Pieremanuele Canepa, Michel Bosman   +12 more
wiley   +1 more source