Results 151 to 160 of about 497,014 (306)

Electrospun conducting polymers: recent trends and the transition towards a sustainable future

Polymer International, EarlyView.
This review discusses the electrospinning of conducting polymers, detailing procedures, fibrous morphologies, improved properties, applications in electronics, and challenges, while outlining future directions for nanofibre‐based devices in various fields.
Xenofon Karagiorgis, Sofia Sandhu, Peter J. Skabara, Ravinder Dahiya   +3 more
wiley   +1 more source

Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode

IEEE Transactions on Electron Devices, 2021
Hengyu Yu, Shiwei Liang, Hangzhi Liu, Jun Wang, Z. Shen   +4 more
semanticscholar   +1 more source

A green solvent processable, self‐doped N‐annulated perylene butyl tetraester applied as a solar cell cathode interlayer

Polymer International, EarlyView.
A new organic molecular cathode interlayer is presented built upon the perylene butyl tetraester scaffold. The new molecule incorporates N‐annulation and a functional amine group to control optical, electrochemical and physical properties and delivers excellent solar cell performance. Abstract We report a new amino‐bay‐substituted, N‐annulated perylene
Kathryn M Wolfe, Shahidul Alam, Zachary T Gardner, Biswajit Pal, Alexander Harrison, Frédéric Laquai, Chad Risko, Gregory C Welch   +7 more
wiley   +1 more source

Progress Toward Efficient Wide‐Gap Cu(In,Ga)(S,Se)2 Thin‐Film Solar Cells

Progress in Photovoltaics: Research and Applications, EarlyView.
Wide‐gap Cu (In,Ga)(S,Se)2 thin‐film solar cells are studied in view of their performance, limitations, and opportunities for further optimization. Different sources of open circuit voltage limitations were discussed and weighted. Interface recombination appears the main recombination channel, which however can be influenced heavy alkali treatment ...
Setareh Zahedi‐Azad, Roland Scheer, Dimitrios Hariskos, Stefan Paetel, Wolfram Hempel, Wolfram Witte, Hao Luo, Oana Cojocaru‐Mirédin, Mary Blankenship, Dirk Hauschild, Victor van Maris, Lothar Weinhardt, Clemens Heske, Thomas Unold, José A. Márquez, Jasmin Seeger, Florian Wilhelmi, Michael Hetterich, Thomas Niesen, Patrick Eraerds, Thomas Dalibor, Xiaowei Jin, Reinhard Schneider, Dagmar Gerthsen, Di Wang, Christian Kübel   +25 more
wiley   +1 more source

Comparison on Module Performance and Degradation Robustness of Two‐, Three‐, and Four‐Terminal Perovskite Silicon Configurations Under Realistic Operating Conditions

Progress in Photovoltaics: Research and Applications, EarlyView.
We compare the module performance of two‐terminal, three‐terminal, and four‐terminal perovskite/silicon modules in terms mismatch, thermalization, and interconnection losses. For each configuration, the bandgap energy of the perovskite layer is optimized for different locations.
Youri Blom, Wenang Suprayogi, Malte Ruben Vogt, Olindo Isabella, Rudi Santbergen   +4 more
wiley   +1 more source

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi, Jae Hyeop Lee, Min Su Kim, Jaeseo Park, Jun Oh Kim, Teli Aviraj Mahadev, Beknalkar Sonali Ajay, Hong Hyuk Kim, Jae Cheol Shin   +8 more
wiley   +1 more source

Detecting DNA translocation through a nanopore using a van der Waals heterojunction diode. [PDF]

Proc Natl Acad Sci U S A
Chen S, Huang S, Son J, Han E, Watanabe K, Taniguchi T, Huang PY, King WP, van der Zande AM, Bashir R.   +9 more
europepmc   +1 more source

Systematic Study of Fermi‐Level Pinning at Crystalline Metal/GaN Interfaces: First‐Principles Calculations and Diode Characterization

Rare Metals, EarlyView.
ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu, Wen Ji, Jiaren Feng, Ming Jiang, Chunmin Cheng, Wei Yu, Hailing Guo, Baikui Li, Hui Li, Zhaofu Zhang, Xi Tang   +10 more
wiley   +1 more source

Selective UV Sensing for Energy-Efficient UV-A Artificial Synapses Using a ZnO/ZnGa₂O₄ Heterojunction Diode. [PDF]

Small
Khan T, Kandar S, Ali S, Singh P, Horng RH, Singh R.   +5 more
europepmc   +1 more source

Broad‐Spectral Response Lead Halide Perovskite Solar Cells Through Integration of Multifunctional Organic Bulk‐Heterojunction and Quantum‐Cutting Downconversion Materials

Rare Metals, EarlyView.
ABSTRACT Expanding near‐infrared (NIR) spectral response and utilizing ultraviolet (UV) photons are effective strategies for enhancing the power conversion efficiency (PCE) of lead halide perovskite solar cells (PSCs). However, the range of NIR spectral response extension and the utilization of UV light for devices are not enough, and the loss of ...
Li He, Sheng Ma, Yusong Zhou, Haotian Zhang, Dezhao Zhang, Hongzhen Su, Lei Wang, Xinjun Li, Hong Liu, Wenzhong Shen   +9 more
wiley   +1 more source