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Pressure Sensors Using Si/ZnO Heterojunction Diode
Silicon, 2021In nanoregime, heterojunction diodes have efficient applications in design and fabrication of sensors. Heterojunction diodes are formed by fusing two dissimilar semiconductors. Based on the combination of the materials used, these heterostructures find applications in bioelectronics and miniaturized sensors.
P. Suveetha Dhanaselvam +4 more
openaire +2 more sources
Nano letters (Print), 2023
Infrared spectrometers with the ability to resolve the spectral intensity and wavelength simultaneously are widely used in industry and the laboratory. However, their huge volume, high price, and cryogenic operating temperature limit their applications ...
Han Wang, Shouheng Chen, Xiaolong Chen
semanticscholar +1 more source
Infrared spectrometers with the ability to resolve the spectral intensity and wavelength simultaneously are widely used in industry and the laboratory. However, their huge volume, high price, and cryogenic operating temperature limit their applications ...
Han Wang, Shouheng Chen, Xiaolong Chen
semanticscholar +1 more source
Alpha particle detection based on a NiO/β-Ga2O3 heterojunction diode
Applied Physics Letters, 2023Alpha particle detection has been achieved using a NiO/β-Ga2O3 heterojunction diode (HJD) detector, demonstrating the great potential of β-Ga2O3 devices for ionizing particle detection.
Leidang Zhou +6 more
semanticscholar +1 more source
IEEE transactions on power electronics, 2022
The technical progress of Ga2O3 power diodes is now stuck at a critical point where a lack of performance evaluation and reliability validation at the system-level applications seriously limits their further development and even future commercialization.
F. Zhou +11 more
semanticscholar +1 more source
The technical progress of Ga2O3 power diodes is now stuck at a critical point where a lack of performance evaluation and reliability validation at the system-level applications seriously limits their further development and even future commercialization.
F. Zhou +11 more
semanticscholar +1 more source
Majority and Minority Carrier Traps in NiO/β-Ga2O3 p+-n Heterojunction Diode
IEEE Transactions on Electron Devices, 2022Identifying defects/traps is of vital importance for the implementation of high-performance Ga2O3 power devices. In this work, majority and minority carrier traps in beta-gallium oxide ( $\beta $ -Ga2O3) have been investigated and identified by means of ...
Zhengpeng Wang +11 more
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2.6 kV NiO/Ga2O3 Heterojunction Diode with Superior High-Temperature Voltage Blocking Capability
International Symposium on Power Semiconductor Devices and IC's, 2022In this study, we demonstrate an effective edge termination for vertical NiO/β-Ga2O3 heterojunction diodes using a continuous p-NiO film as Junction Termination Extension (JTE).
Weibing Hao +5 more
semanticscholar +1 more source
Journal of Physical Chemistry Letters, 2021
With their excellent optoelectronic properties, halide perovskite (HP) semiconductors have witnessed successful applications in many fields, such as solar cells, LEDs, photodetectors, transistors, and memristors.
Like Huang +12 more
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With their excellent optoelectronic properties, halide perovskite (HP) semiconductors have witnessed successful applications in many fields, such as solar cells, LEDs, photodetectors, transistors, and memristors.
Like Huang +12 more
semanticscholar +1 more source
ACS Nano, 2022
Transition metal dichalcogenides (TMDs) have emerged as two-dimensional (2D) building blocks to construct nanoscale light sources. To date, a wide array of TMD-based light-emitting devices (LEDs) have been successfully demonstrated. Yet, their atomically
Xin Yang +18 more
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Transition metal dichalcogenides (TMDs) have emerged as two-dimensional (2D) building blocks to construct nanoscale light sources. To date, a wide array of TMD-based light-emitting devices (LEDs) have been successfully demonstrated. Yet, their atomically
Xin Yang +18 more
semanticscholar +1 more source