Results 241 to 250 of about 497,014 (306)
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Physica Scripta, 2022
Heterojunction diodes of ZnS/p-Si have been fabricated using the chemical bath deposition (CBD) technique at two different deposition durations under both stirring and non-stirring conditions.
Arun Kumar +6 more
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Heterojunction diodes of ZnS/p-Si have been fabricated using the chemical bath deposition (CBD) technique at two different deposition durations under both stirring and non-stirring conditions.
Arun Kumar +6 more
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Millimeter Wave Heterojunction MITATT Diodes
1987 IEEE MTT-S International Microwave Symposium Digest, 1987A design theory, a fabrication procedure, and experimental results for heterojunction millimeter-wave transit-time devices operating in the IMPATT (impact ionization avalanche transit-time), MITATT (mixed panel-avalanche transit-time), or TUNNETT (tunnel transit-time) mode are presented.
N.S. Dogan +3 more
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Heterojunction PIN diode switch
IEEE MTT-S International Microwave Symposium Digest, 2003, 2003This paper describes the development of a heterojunction AlGaAs/GaAs PIN diode as a replacement for the homojunction GaAs PIN diodes commonly used in microwave systems as a control element for commercial and military switch applications up through millimeter wave frequencies. In particular, a single heterojunction PIN diode, when simulated at a bias of
D. Hoag +4 more
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AlN/diamond heterojunction diodes
Applied Physics Letters, 2003An aluminum nitride/diamond p–n heterojunction has been realized by plasma-induced molecular-beam epitaxy growth of AlN on (100) diamond. The epitaxial nature of this heterojunction has been confirmed by high-resolution x-ray diffraction. The silicon-doped AlN film (n-type) on the natural boron-doped (p-type) diamond substrate formed a heterobipolar ...
Miskys, C. +6 more
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A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode
, 2020In this Letter, high-performance vertical NiO/β-Ga2O3 p–n heterojunction diodes without any electric field managements were reported. The devices show a low leakage current density and a high rectification ratio over 1010 (at ±3 V) even operated at ...
Gong Hehe +5 more
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Nanofluidic Diodes Based on Nanotube Heterojunctions
Nano Letters, 2009The mechanism of tuning charge transport in electronic devices has recently been implemented into the nanofluidic field for the active control of ion transport in nanoscale channels/pores. Here we report the first synthesis of longitudinal heterostructured SiO(2)/Al(2)O(3) nanotubes.
Ruoxue, Yan +3 more
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A Diamond Silicon Heterojunction Diode
MRS Proceedings, 1989ABSTRACTThin diamond films were grown on low resistivity p-type Si wafers by microwave plasma assisted chemical vapor deposition. Using gold contacts, diode-like behavior was observed and forward bias current densities in excess of 5 A/cm2 were obtained. Reverse bias current densities were as low as 5 mA/cm2.
C. L. Ellison +2 more
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Si-CdS heterojunction memory diodes
Journal of Applied Physics, 1978The I-V characterisitcs of pSi-nCdS heterojunction diodes have been investigated, the diodes being fabricated by growing epitaxial CdS films on silicon substrates under UHV conditions. Under certain fabrication conditions, viz., a substrate-acceptor doping ∼1019 cm−3, a CdS film resistivity ∼102Ω cm, and Schottky contacts to the CdS, it has been ...
W. Duncan, A. R. Smellie
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Applied Physics Letters
A metal/n-Ga2O3/p-diamond heterojunction diode with superior high-temperature performance was demonstrated in this work. The p-type diamond was lightly boron doped, and the Ga2O3 film was grown via atomic layer deposition without intentional doping.
Dan Zhao +7 more
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A metal/n-Ga2O3/p-diamond heterojunction diode with superior high-temperature performance was demonstrated in this work. The p-type diamond was lightly boron doped, and the Ga2O3 film was grown via atomic layer deposition without intentional doping.
Dan Zhao +7 more
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AlGaAs anode heterojunction PIN diodes
physica status solidi c, 2013AbstractThis paper describes the development of a heterojunction AlGaAs/GaAs PIN diode as a revolutionary improvement as compared to the homojunction GaAs PIN diode commonly used in microwave systems for commercial and military applications. In a heterojunction device the injected carriers from the junction are confined by the bandgap discontinuity ...
T. Boles, J. Brogle, D. Hoag, D. Carlson
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