Results 251 to 260 of about 497,014 (306)

3.3 kV-class NiO/β-Ga2O3 heterojunction diode and its off-state leakage mechanism

Applied Physics Letters
This Letter demonstrates a high-performance 3.3 kV-class β-Ga2O3 vertical heterojunction diode (HJD) along with an investigation into its off-state leakage mechanism.
Jiangbin Wan, Hengyu Wang, Chi Zhang, Yanjun Li, Ce Wang, Haoyuan Cheng, Junze Li, Na Ren, Qing Guo, Kuang Sheng   +9 more
semanticscholar   +1 more source

Design and Fabrication of Vertical Metal/TiO2/β-Ga2O3 Dielectric Heterojunction Diode With Reverse Blocking Voltage of 1010 V

IEEE Transactions on Electron Devices, 2020
This work provides insight into the design principles and the reasonable construction of Ga2O3 heterojunction diode. We chose TiO2 grown by atomic layer deposition (ALD) as a suitable insulator with a small conduction band offset of TiO $_{2} \boldsymbol
Zhuangzhuang Hu, Jianguo Li, Chunyong Zhao, Zhaoqing Feng, Xusheng Tian, Yanni Zhang, Yachao Zhang, Jing Ning, Hong Zhou, Chunfu Zhang, Y. Lv, X. Kang, H. Feng, Q. Feng, Jincheng Zhang, Y. Hao   +15 more
semanticscholar   +1 more source

High-frequency, 6.2ÅpN heterojunction diodes

Solid-State Electronics, 2012
Abstract Sb-based pN heterojunction diodes at 6.2 A, consisting of narrow bandgap p -type In 0.27 Ga 0.73 Sb and wide bandgap n -type In 0.69 Al 0.41 As 0.41 Sb 0.59 , have been fabricated and measured. These diodes show excellent electrical characteristics with an ideality factor of 1.2 and high current density.
James G. Champlain, Richard Magno, Doewon Park, Harvey S. Newman, J. Brad Boos   +4 more
openaire   +1 more source

p-GaAs/n-Ga2O3 heterojunction diode with breakdown voltage of ∼800 V

Applied Physics Letters
As an attractive next generation ultrawide bandgap material, Ga2O3 has been demonstrated to be capable of high voltage operation. However, the lack of shallow p-type dopant in Ga2O3 leads to difficulties in developing Ga2O3 based bipolar devices.
Shuwen Xie, Moheb Sheikhi, Shining Xu, Md. Tahmidul Alam, Jie Zhou, L. Mawst, Zhenqiang Ma, Chirag Gupta   +7 more
semanticscholar   +1 more source

0.86 kV p-Si/(001)-Ga2O3 Heterojunction Diode

IEEE Electron Device Letters
In this work, we report a single crystalline p-Si/(001) $\beta $ -Ga2O3 heterojunction diode fabricated using semiconductor grafting technology. The diode showed a breakdown voltage ( $\text{V}_{\text {br}}{)}$ of ~0.86 kV, which is the highest ...
Shuwen Xie, Md. Tahmidul Alam, Jiarui Gong, Qinchen Lin, Moheb Sheikhi, Jie Zhou, F. Alema, Andrei Osinsky, S. Pasayat, Zhenqiang Ma, Chirag Gupta   +10 more
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Heterojunction IMPATT diodes

IEEE Transactions on Electron Devices, 1992
Heterojunction IMPATT diodes, which incorporate an abrupt GaAs/Al/sub 0.3/Ga/sub 0.7/As p/N heterojunction in place of the standard p/n junction, have shown a number of significant properties that represent a considerable technological advance. Ku-band experimental devices exhibit up to 2.0 dB higher power, superior DC characteristics, and 3-6 dB less ...
openaire   +1 more source

AlGaAs/GaInP heterojunction tunnel diode

AIP Conference Proceedings, 1992
A p+‐AlGaAs/n+‐GaInP heterojunction tunnel diode with band gap Eg≊1.9 eV was fabricated by Atomic Layer Epitaxy growth mode using carbon and selenium as the p‐ and n‐type dopants, respectively. The doping levels of 1×1020/cm3 and 5×1019/cm3 were achieved both in the p‐ and n‐side of the diode, respectively.
D. Jung, C. A. Parker, J. Ramdani, S. M. Bedair   +3 more
openaire   +1 more source

Flexible InP–ZnO nanowire heterojunction light emitting diodes

Nanoscale Horizons, 2022
Flexible electronics are gaining rapid popularity in modern day life. We demonstrate a simplified process to make flexible LEDs using p-InP nanowires with conformal coating of ZnO and perform a systematic study.
Nikita Gagrani, Kaushal Vora, Lan Fu, Chennupati Jagadish, Hark Hoe Tan   +4 more
openaire   +2 more sources

Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/rhenium diselenide van der Waals heterojunction diode.

Nanoscale, 2020
Tunneling-based van der Waals (vdW) heterostructures composed of layered transition metal dichalcogenides (TMDs) are emerging as a unique compact system that provides new research avenues in electronics and optoelectronics.
A. Afzal, Y. Javed, Naveed Akhtar Shad, M. Iqbal, Ghulam Dastgeer, M. Munir Sajid, Sohail Mumtaz   +6 more
semanticscholar   +1 more source

Exploring conduction mechanism and photoresponse in P-GaN/n-MoS2 heterojunction diode

, 2020
Mixed-dimensional heterostructures have shown their potential in electronic devices. However, their functionality is limited by a complete understanding of the contacts and the current transport behavior. Here, we explore the electrical properties of the
Monika Moun, Rajendra Singh
semanticscholar   +1 more source