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Electrical properties of Ga-doped ZnO nanowires/Si heterojunction diode
Materials Express, 2020Herein, we report the high-temperature electrical characteristics of heterojunction diode fabricated based on n-Ga-doped ZnO nanowires/p-Silicon substrate. Various electronic properties such as rectification ratio, the effective barrier height, the diode
Y. Al-Hadeethi +5 more
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Heterojunction high speed switching diodes
1962 International Electron Devices Meeting, 1962The Ge-GaAs n-n heterojunction has interesting rectifying properties due to the interface barrier between the two materials. The conduction mechanism of the junction will be described. The fact that the current is carried mainly by the majority carrier allows the diode to switch at high speed without suffering from carrier storage.
F.F. Fang, W.E. Howard
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International Conference on Electronics, Information and Communications, 2020
In this paper, a novel silicon carbide (SiC) Super Junction (SJ) UMOSFET with Heterojunction Diode (HJD) is proposed and investigated by numerical simulation.
Junghun Kim, Kwangsoo Kim
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In this paper, a novel silicon carbide (SiC) Super Junction (SJ) UMOSFET with Heterojunction Diode (HJD) is proposed and investigated by numerical simulation.
Junghun Kim, Kwangsoo Kim
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An Intrinsic Carbon Nanotube Heterojunction Diode
The Journal of Physical Chemistry B, 1999Carbon nanotubes are metallic, semimetallic, or semiconducting, depending on their helicity. This raises the possibility of forming nanoelectronic devices by joining tubes of differing helicity. We report calculations of the electronic properties of pairs of “armchair” and “zigzag” nanotubes joined linearly. The linear junction in each case consists of
Gabin Treboux +2 more
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, 2020
The collective oscillation of conduction electrons at the interface between metallic nanostructures and semiconductors has become one of the most attractive approaches to facilitate the luminous efficiency of light-emitting materials and devices. In this
Yuting Wu +5 more
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The collective oscillation of conduction electrons at the interface between metallic nanostructures and semiconductors has become one of the most attractive approaches to facilitate the luminous efficiency of light-emitting materials and devices. In this
Yuting Wu +5 more
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Chapter 2 Heterojunction Laser Diodes
1979Publisher Summary This chapter deals with the design and operating characteristics of heterojunction semiconductor laser diodes. In particular, the threshold current densities at room temperature have been reduced by orders of magnitude permitting cw operation.
Henry Kressel, Jerome K. Butler
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A Functional Material Based Heterojunction Diode
Silicon, 2017In this study, the phosphotungstic acid /p-Si diode was fabricated by a drop coating method. The fabricated diode had excellent rectifying properties. The electrical properties of the diode were investigated in the temperature range of 50-400 K. The optical band gap of the phosphotungstic acid film was determined and found to be 3.66 eV. The electrical
H. M. El-Nasser +7 more
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Epitaxial ZnO/4H-SiC heterojunction diodes
2010 3rd International Nanoelectronics Conference (INEC), 2010High quality n-ZnO/p-SiC heterojunction diodes have been fabricated and their photoresponse properties have been investigated. X-ray diffraction (XRD) θ-2θ patterns show that highly c-axis oriented ZnO films were epitaxially grown on 4H-SiC. The RMS roughness is observed as low as 2 nm by atomic force microscope (AFM).
null Jae Sang Lee +6 more
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Thin film CdS-CdTe heterojunction diodes
Solid-State Electronics, 1968CdTe layer formation at CdS-Te interface during fabrication of thin film, Au-CdS-Te heterojunction diodes by vapor ...
R.W. Dutton, R.S. Muller
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2015
In the recent past, the development of microwave devices having low noise, high frequency, greater bandwidth, lesser switching time etc. has yielded devices with improved performance. These devices have been used in drying machines for textile, food and papers industries etc., for biomedical applications, for electronic warfare etc.
K. M. Gupta, Nishu Gupta
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In the recent past, the development of microwave devices having low noise, high frequency, greater bandwidth, lesser switching time etc. has yielded devices with improved performance. These devices have been used in drying machines for textile, food and papers industries etc., for biomedical applications, for electronic warfare etc.
K. M. Gupta, Nishu Gupta
openaire +1 more source