Results 161 to 170 of about 210,178 (311)

Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations

open access: yesAdvanced Materials, EarlyView.
Screen gate‐based transistors are presented, enabling tunable analog sigmoid and Gaussian activations. The SA‐transistor improves MRI classification accuracy, while the GA‐transistor supports precise Gaussian kernel tuning for forecasting. Both functions are implemented in a single device, offering compact, energy‐efficient analog AI processing ...
Junhyung Cho   +9 more
wiley   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

open access: yesAdvanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades   +7 more
wiley   +1 more source

Non‐Destructive Laser Nanopatterning of Superconducting Heterostructures in Topological Sn Thin Films

open access: yesAdvanced Materials, EarlyView.
We demonstrate successful fabrication of high‐quality α‐Sn/β‐Sn planar nanostructures with arbitrary shapes by focused laser irradiation on topological Dirac semimetal α‐Sn thin films. The irradiated regions transform into atomically smooth, superconducting β‐Sn with a critical temperature of 3.7 K.
Le Duc Anh   +5 more
wiley   +1 more source

Optical heterostructure in a two-dimensional organic crystal. [PDF]

open access: yesNat Commun
Liao K   +17 more
europepmc   +1 more source

Giant Berry‐phase‐Driven X‐Ray Beam Translations in Strain‐Engineered Semiconductor Crystals

open access: yesAdvanced Materials, EarlyView.
Due to the Berry‐phase effect, X‐rays propagating in deformed crystals undergo large translations, interesting for X‐ray optics applications. Here, the lattice expansion observed upon H irradiation of dilute‐nitride semiconductors is exploited to engineer the deformation landscape of selectively hydrogenated GaAsN epilayers.
Marco Felici   +9 more
wiley   +1 more source

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