Results 81 to 90 of about 45,166 (322)

Electronic Structure of Folded Hexagonal Boron Nitride

The Journal of Physical Chemistry C, 2022
Folded regions are commonly encountered in a number of hexagonal boron nitride (h-BN) based bulk and nanostructured materials. Two types of structural modifications occur in folded h-BN layers: local curvature at the folded edges and interlayer shear of the layers which changes the stacking of the overlapping flat regions.
Anthony Impellizzeri, Michele Amato, Chris P. Ewels, Alberto Zobelli   +3 more
openaire   +3 more sources

Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis

Advanced Functional Materials, EarlyView.
An all‐optical method is presented for quantifying the density of boron vacancy spin defects in hexagonal boron nitride (hBN). By correlating Raman and photoluminescence signals with irradiation fluence, defect‐induced Raman modes are identified and established an relationship linking optical signatures to absolute defect densities. This enables direct
Atanu Patra, Paul Konrad, Andreas Sperlich, Timur Biktagirov, Wolf Gero Schmidt, Lesley Spencer, Igor Aharonovich, Sven Höfling, Vladimir Dyakonov   +8 more
wiley   +1 more source

Fabrication of Atomically Precise Nanopores in Hexagonal Boron Nitride [PDF]

, 2017
We demonstrate the fabrication of individual nanopores in hexagonal boron nitride (hBN) with atomically precise control of the pore size. Previous methods of pore production in other 2D materials create pores of irregular geometry with imprecise ...
Aloni, Shaul, Dimitrov, Edgar, Dunn, Gabriel, Gilbert, S. Matt, Pham, Thang, Shevitski, Brian, Zettl, Alex   +6 more
core   +1 more source

Domain‐Wall‐Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers

Advanced Functional Materials, EarlyView.
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek, Seong Chul Hong, Jinwoo Kim, Hyeongseok Lee, Hyun Woo Jeong, Kenji Watanabe, Takashi Taniguchi, Min Hyuk Park, Gwan‐Hyoung Lee   +8 more
wiley   +1 more source

Alginic Acid-Aided Dispersion of Carbon Nanotubes, Graphene, and Boron Nitride Nanomaterials for Microbial Toxicity Testing

Nanomaterials, 2018
Robust evaluation of potential environmental and health risks of carbonaceous and boron nitride nanomaterials (NMs) is imperative. However, significant agglomeration of pristine carbonaceous and boron nitride NMs due to strong van der Waals forces ...
Ying Wang, Monika Mortimer, Chong Hyun Chang, Patricia A. Holden   +3 more
doaj   +1 more source

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post‐Synaptic Current for Highly Accurate Spiking Neural Networks

Advanced Functional Materials, EarlyView.
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon, Soeun Park, Yeong Kwon Kim, Juhwan Baek, Ki Han Kim, Seongil Yun, Hyeonchang Son, Jeongeun Choi, Byung Chul Jang, Dong‐Ho Kang   +9 more
wiley   +1 more source

Strong and Localized Luminescence from Interface Bubbles Between Stacked hBN Multilayers

Nature Communications, 2022
Optoelectronic properties of van der Waals heterostructures can be tuned via strain. Here, authors demonstrate strong and localized luminescence in the ultraviolet region from interface bubbles between stacked multilayers of hexagonal boron nitride.
Hae Yeon Lee, Soumya Sarkar, Kate Reidy, Abinash Kumar, Julian Klein, Kenji Watanabe, Takashi Taniguchi, James M. LeBeau, Frances M. Ross, Silvija Gradečak   +9 more
doaj   +1 more source

STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride

, 2010
Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point.
A Deshpande, AH Castro Neto, AK Geim, Aparna Deshpande, Brian J. LeRoy, CH Lui, CR Dean, Danny Bulmash, E Rossi, E Stolyarova, EA Kim, F Guinea, G Giovannetti, G Li, J Martin, J Slawinska, J-H Chen, Javier Sanchez-Yamagishi, JC Meyer, Jiamin Xue, K Watanabe, K. Watanabe, KI Bolotin, KI Bolotin, KS Novoselov, L Liu, LM Zhang, M Ishigami, Pablo Jarillo-Herrero, Philippe Jacquod, T Taniguchi, T. Taniguchi, W Bao, WG Cullen, X Du, X Du, Y Zhang   +36 more
core   +1 more source

Laser‐Induced Microfabrication of Carbon Nanostructure: Processing Mechanism and Application for Next‐Generation Battery Technology

Advanced Functional Materials, EarlyView.
The article reviews laser‐processed carbons from various precursors, processing mechanism and their application in advanced batteries. The laser process is chemical free, fast, and scalable, enabling improved battery performance and stability for Li, Na, and Zn battery technologies.
Sujit Deshmukh, Shaista Nouseen, Martin Pumera   +2 more
wiley   +1 more source

Electronic properties of sculpturenes

New Journal of Physics, 2014
We investigate the electronic properties of sculpturenes , formed by sculpting selected shapes from bilayer graphene, boron nitride or graphene–boron nitride hetero-bilayers and allowing the shapes to spontaneously reconstruct.
Laith Algharagholy, Thomas Pope, Steven W D Bailey, Colin J Lambert   +3 more
doaj   +1 more source