Results 1 to 10 of about 13,013 (179)

Damage Mechanism of HgCdTe Focal Plane Array Detector Irradiated Using Mid-Infrared Pulse Laser. [PDF]

open access: yesSensors (Basel), 2023
To investigate the damage threshold and mechanism of a mid-infrared HgCdTe focal plane array (FPA) detector, relevant experimental and theoretical studies were conducted.
Zhang Y   +5 more
europepmc   +2 more sources

Experimental Study on Damage Effect of Mid-Infrared Pulsed Laser on Charge Coupled Device (CCD) and HgCgTe Detectors. [PDF]

open access: yesSensors (Basel)
As the weak link in electro-optical imaging systems, photodetectors have always faced the threat of laser damage. In this paper, we experimentally investigated the damage mechanism of the photodetector induced by the out-of-band laser.
Liu Y   +6 more
europepmc   +2 more sources

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm. [PDF]

open access: yesSensors (Basel), 2022
The trend related to reach the high operating temperature condition (HOT, temperature, T > 190 K) achieved by thermoelectric (TE) coolers has been observed in infrared (IR) technology recently.
Kopytko M   +3 more
europepmc   +2 more sources

Infrared HOT Photodetectors: Status and Outlook. [PDF]

open access: yesSensors (Basel), 2023
At the current stage of long-wavelength infrared (LWIR) detector technology development, the only commercially available detectors that operate at room temperature are thermal detectors.
Rogalski A   +3 more
europepmc   +2 more sources

Balancing the Number of Quantum Wells in HgCdTe/CdHgTe Heterostructures for Mid-Infrared Lasing. [PDF]

open access: yesNanomaterials (Basel), 2022
HgCdTe-based heterostructures with quantum wells (QWs) are a promising material for semiconductor lasers in the atmospheric transparency window (3–5 μm) thanks to the possibility of suppressing Auger recombination due to the no-parabolic law of carrier ...
Fadeev MA   +10 more
europepmc   +2 more sources

Impact of Residual Compositional Inhomogeneities on the MCT Material Properties for IR Detectors. [PDF]

open access: yesSensors (Basel)
HgCdTe is a well-known material for state-of-the-art infrared photodetectors. The interd-iffused multilayer process (IMP) is used for Metal–Organic Chemical Vapor Deposition (MOCVD) of HgCdTe heterostructures, enabling precise control of composition.
Sobieski J   +5 more
europepmc   +2 more sources

Research on Electro-Optical Characteristics of Infrared Detectors with HgCdTe Operating at Room Temperature. [PDF]

open access: yesSensors (Basel), 2023
This paper presents a thorough analysis of the current–voltage characteristics of uncooled HgCdTe detectors optimized for different spectral ranges. HgCdTe heterostructures were grown by means of metal–organic chemical vapor deposition (MOCVD) on GaAs ...
Madejczyk P, Manyk T, Rutkowski J.
europepmc   +2 more sources

Stimulated Emission up to 2.75 µm from HgCdTe/CdHgTe QW Structure at Room Temperature. [PDF]

open access: yesNanomaterials (Basel), 2022
Heterostructures with thin Hg(Cd)Te/CdHgTe quantum wells (QWs) are attractive for the development of mid-infrared interband lasers. Of particular interest are room-temperature operating emitters for the short-wavelength infrared range (SWIR, typically ...
Utochkin VV   +12 more
europepmc   +2 more sources

Review of Photodetectors for Space Lidars. [PDF]

open access: yesSensors (Basel)
Photodetectors play a critical role in space lidars designed for scientific investigations from orbit around planetary bodies. The detectors must be highly sensitive due to the long range of measurements and tight constraints on the size, weight, and ...
Sun X.
europepmc   +2 more sources

High-sensitivity, high-speed, broadband mid-infrared photodetector enabled by a van der Waals heterostructure with a vertical transport channel. [PDF]

open access: yesNat Commun
The realization of room-temperature-operated, high-performance, miniaturized, low-power-consumption and Complementary Metal-Oxide-Semiconductor (CMOS)-compatible mid-infrared photodetectors is highly desirable for next-generation optoelectronic ...
Wu J   +18 more
europepmc   +2 more sources

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