Results 11 to 20 of about 12,890 (250)

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

Sensors, 2022
The trend related to reach the high operating temperature condition (HOT, temperature, T > 190 K) achieved by thermoelectric (TE) coolers has been observed in infrared (IR) technology recently.
Małgorzata Kopytko, Waldemar Gawron, Piotr Martyniuk   +2 more
exaly   +5 more sources

HgCdTe-based heterostructures for terahertz photonics [PDF]

APL Materials, 2017
Due to their specific physical properties, HgCdTe-based heterostructures are expected to play an important role in terahertz photonic systems. Here, focusing on gated devices presenting inverted band ordering, we evidence an enhancement of the terahertz ...
S. Ruffenach, A. Kadykov, V. V. Rumyantsev, J. Torres, D. Coquillat, D. But, S. S. Krishtopenko, C. Consejo, W. Knap, S. Winnerl, M. Helm, M. A. Fadeev, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, S. V. Morozov, F. Teppe   +16 more
doaj   +5 more sources

HgCdTe e-avalanche photodiode detector arrays [PDF]

AIP Advances, 2015
Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A) product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 ...
Anand Singh, A. K. Shukla, Ravinder Pal
doaj   +2 more sources

Van der Waals Epitaxy of HgCdTe Thin Films for Flexible Infrared Optoelectronics

Advanced Materials Interfaces, 2023
Van der Waals epitaxial (vdW) growth of semiconductor thin films on 2D layered substrates has recently attracted considerable attention since it provides a potential pathway for realizing monolithically integrated devices and flexible devices.
Wenwu Pan, Zekai Zhang, Renjie Gu, Shuo Ma, Lorenzo Faraone, Wen Lei   +5 more
doaj   +2 more sources

Damage Mechanism of HgCdTe Focal Plane Array Detector Irradiated Using Mid-Infrared Pulse Laser [PDF]

Sensors, 2023
To investigate the damage threshold and mechanism of a mid-infrared HgCdTe focal plane array (FPA) detector, relevant experimental and theoretical studies were conducted.
Yin Zhang, Changbin Zheng, Yang Liu, Yunzhe Wang, Yongbo Xu, Junfeng Shao   +5 more
doaj   +2 more sources

Microstructure and Optical Characterization of Mid-Wave HgCdTe Grown by MBE under Different Conditions

Crystals, 2021
The mid-wave single-crystal HgCdTe (211) films were successfully grown on GaAs (211) B substrates by molecular beam epitaxy (MBE). Microstructure and optical properties of the MBE growth HgCdTe films grown at different temperatures were characterized by ...
Xiao-Fang Qiu, Sheng-Xi Zhang, Jian Zhang, Yi-Cheng Zhu, Cheng Dou, San-Can Han, Yan Wu, Ping-Ping Chen   +7 more
doaj   +2 more sources

Interfacial Characteristics of HgCdTe Infrared Detectors Grown on Alternative Substrates [PDF]

Sensors
To overcome the limitations of CdZnTe substrates for large-format, low-cost HgCdTe infrared focal plane arrays (IRFPAs), the epitaxial growth of HgCdTe films on alternative substrates (e.g., GaAs and Si) has become an important research focus.
Yuanyuan Li, Qingjun Liao, Huihao Li, Jindong Wang, Hao Wu, Zhenhua Ye, Xiaoning Hu, Chun Lin   +7 more
doaj   +2 more sources

Experimental Study on Damage Effect of Mid-Infrared Pulsed Laser on Charge Coupled Device (CCD) and HgCgTe Detectors [PDF]

Sensors
As the weak link in electro-optical imaging systems, photodetectors have always faced the threat of laser damage. In this paper, we experimentally investigated the damage mechanism of the photodetector induced by the out-of-band laser.
Yang Liu, Feng Zhou, Yunzhe Wang, Yin Zhang, Yunfeng Zhang, Hanyu Zheng, Junfeng Shao   +6 more
doaj   +2 more sources

The Damage Effects on a HgCdTe Detector of a Short-Infrared Pulsed Laser with Different Pulse Widths [PDF]

Micromachines
The high sensitivity of HgCdTe infrared detectors makes them highly vulnerable to laser irradiation, yet the influence of pulse width on damage behavior in the short-wave infrared (SWIR) band remains insufficiently understood.
Qiheng Wei, Xianfeng Wu, Lingyuan Wu, Yongqiang Zhang, Fuli Tan, Bo Fu, Wei Li, Yanglong Li   +7 more
doaj   +2 more sources

DRIFT EFFECTS IN HGCDTE DETECTORS [PDF]

Journal of Engineering Science and Technology, 2013
The characteristics of temporal drift in spectral responsivity of HgCdTe photodetectors is investigated and found to have an origin different from what has been reported in literature.
B. PAVAN KUMAR, M. W. AKRAM, BAHNIMAN GHOSH, JOSEPH JOHN   +3 more
doaj   +3 more sources