Results 11 to 20 of about 13,155 (214)

Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors [PDF]

open access: yesBulletin of the Polish Academy of Sciences: Technical Sciences, 2020
In the past decade, there has been significant progress in development of the colloidal quantum dot (CQD) photodetectors. The QCD’s potential advantages include: cheap and easy fabrications, size-tuneable across wide infrared spectral region, and direct ...
A. Rogalski   +3 more
doaj   +1 more source

Microstructure and Optical Characterization of Mid-Wave HgCdTe Grown by MBE under Different Conditions

open access: yesCrystals, 2021
The mid-wave single-crystal HgCdTe (211) films were successfully grown on GaAs (211) B substrates by molecular beam epitaxy (MBE). Microstructure and optical properties of the MBE growth HgCdTe films grown at different temperatures were characterized by ...
Xiao-Fang Qiu   +7 more
doaj   +1 more source

Study of HgCdTe (100) and HgCdTe (111)B Heterostructures Grown by MOCVD and Their Potential Application to APDs Operating in the IR Range up to 8 µm

open access: yesSensors, 2022
The trend related to reach the high operating temperature condition (HOT, temperature, T > 190 K) achieved by thermoelectric (TE) coolers has been observed in infrared (IR) technology recently.
Małgorzata Kopytko   +3 more
doaj   +1 more source

INFRARED DETECTORS [PDF]

open access: yesJournal of Engineering Science (Chişinău), 2018
Infrared detectors have wide application in a range of industry sectors, including defence, astronomy, medicine, environmental safety, and remote sensing. The applications requiring the highest sensitivity over a broad spectrum of wavelengths are usually
Titu-Marius I. Băjenescu
doaj   +1 more source

Van der Waals Epitaxy of HgCdTe Thin Films for Flexible Infrared Optoelectronics

open access: yesAdvanced Materials Interfaces, 2023
Van der Waals epitaxial (vdW) growth of semiconductor thin films on 2D layered substrates has recently attracted considerable attention since it provides a potential pathway for realizing monolithically integrated devices and flexible devices.
Wenwu Pan   +5 more
doaj   +1 more source

Investigation of the influence of graded-gap layer formed by annealing on the electrical properties of the near-surface of LPE HgCdTe using MIS structure

open access: yesMaterials Research Express, 2021
The influence of the near-surface graded-gap layer formed by annealing of HgCdTe grown by liquid phase epitaxy on the capacitance-voltage characteristics of its MIS structure was studied.
Qi Lu   +4 more
doaj   +1 more source

In Situ Diffuse Reflectance Infrared Fourier-Transform Spectroscopy Investigation of 1-Methylcyclopropene Adsorption in Cobalt-Formate Metal-Organic Framework. [PDF]

open access: yesChemistryOpen
In situ diffuse reflectance infrared Fourier‐transform spectroscopy spectroscopy was used to investigate 1‐MCP adsorption in the pores of Co3(HCOO)6 (Co‐FA) metal–organic framework (MOF). A strong confinement of 1‐MCP at room temperature and a significant release by moderate heating, proves Co‐FA as a promising material for food preservation ...
Pnevskaya AY, Tereshchenko AA, Bugaev A.
europepmc   +2 more sources

Trends in Performance Limits of the HOT Infrared Photodetectors

open access: yesApplied Sciences, 2021
The cryogenic cooling of infrared (IR) photon detectors optimized for the mid- (MWIR, 3–5 µm) and long wavelength (LWIR, 8–14 µm) range is required to reach high performance. This is a major obstacle for more extensive use of IR technology.
Antoni Rogalski   +3 more
doaj   +1 more source

Performance limitations of GaAs/AlGaAs infrared superlattices [PDF]

open access: yes, 1989
The performance of the GaAs/AlGaAs superlattice as an infrared detecting material is modeled as a function of temperature for two cutoff wavelengths, namely, 8.3 and 10.0 µm.
Kinch, M. A., Yariv, A.
core   +1 more source

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