Results 1 to 10 of about 13,155 (214)

Damage Mechanism of HgCdTe Focal Plane Array Detector Irradiated Using Mid-Infrared Pulse Laser [PDF]

Sensors, 2023
To investigate the damage threshold and mechanism of a mid-infrared HgCdTe focal plane array (FPA) detector, relevant experimental and theoretical studies were conducted.
Yin Zhang, Changbin Zheng, Yang Liu, Yunzhe Wang, Yongbo Xu, Junfeng Shao   +5 more
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Experimental Study on Damage Effect of Mid-Infrared Pulsed Laser on Charge Coupled Device (CCD) and HgCgTe Detectors [PDF]

Sensors
As the weak link in electro-optical imaging systems, photodetectors have always faced the threat of laser damage. In this paper, we experimentally investigated the damage mechanism of the photodetector induced by the out-of-band laser.
Yang Liu, Feng Zhou, Yunzhe Wang, Yin Zhang, Yunfeng Zhang, Hanyu Zheng, Junfeng Shao   +6 more
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Interfacial Characteristics of HgCdTe Infrared Detectors Grown on Alternative Substrates [PDF]

Sensors
To overcome the limitations of CdZnTe substrates for large-format, low-cost HgCdTe infrared focal plane arrays (IRFPAs), the epitaxial growth of HgCdTe films on alternative substrates (e.g., GaAs and Si) has become an important research focus.
Yuanyuan Li, Qingjun Liao, Huihao Li, Jindong Wang, Hao Wu, Zhenhua Ye, Xiaoning Hu, Chun Lin   +7 more
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Impact of Residual Compositional Inhomogeneities on the MCT Material Properties for IR Detectors [PDF]

Sensors
HgCdTe is a well-known material for state-of-the-art infrared photodetectors. The interd-iffused multilayer process (IMP) is used for Metal–Organic Chemical Vapor Deposition (MOCVD) of HgCdTe heterostructures, enabling precise control of composition.
Jan Sobieski, Małgorzata Kopytko, Kacper Matuszelański, Waldemar Gawron, Józef Piotrowski, Piotr Martyniuk   +5 more
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Infrared HOT Photodetectors: Status and Outlook [PDF]

Sensors, 2023
At the current stage of long-wavelength infrared (LWIR) detector technology development, the only commercially available detectors that operate at room temperature are thermal detectors.
Antoni Rogalski, Małgorzata Kopytko, Weida Hu, Piotr Martyniuk   +3 more
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Balancing the Number of Quantum Wells in HgCdTe/CdHgTe Heterostructures for Mid-Infrared Lasing [PDF]

Nanomaterials, 2022
HgCdTe-based heterostructures with quantum wells (QWs) are a promising material for semiconductor lasers in the atmospheric transparency window (3–5 μm) thanks to the possibility of suppressing Auger recombination due to the no-parabolic law of carrier ...
Mikhail A. Fadeev, Alexander A. Dubinov, Anna A. Razova, Arina A. Yantser, Vladimir V. Utochkin, Vladimir V. Rumyantsev, Vladimir Ya. Aleshkin, Vladimir I. Gavrilenko, Nikolai N. Mikhailov, Sergey A. Dvoretsky, Sergey V. Morozov   +10 more
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Temperature-driven massless Kane fermions in HgCdTe crystals

Nature Communications, 2016
Kane fermions are predicted to be tunable with external parameters such as temperature. Here, Teppe et al. show a band structure evolution of bulk HgCdTe as temperature is tuned across topological phase transition, demonstrating that Kane fermions change
F. Teppe, M. Marcinkiewicz, S. S. Krishtopenko, S. Ruffenach, C. Consejo, A. M. Kadykov, W. Desrat, D. But, W. Knap, J. Ludwig, S. Moon, D. Smirnov, M. Orlita, Z. Jiang, S. V. Morozov, V.I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii   +17 more
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Research on Electro-Optical Characteristics of Infrared Detectors with HgCdTe Operating at Room Temperature [PDF]

Sensors, 2023
This paper presents a thorough analysis of the current–voltage characteristics of uncooled HgCdTe detectors optimized for different spectral ranges. HgCdTe heterostructures were grown by means of metal–organic chemical vapor deposition (MOCVD) on GaAs ...
Paweł Madejczyk, Tetiana Manyk, Jarosław Rutkowski   +2 more
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High-sensitivity, high-speed, broadband mid-infrared photodetector enabled by a van der Waals heterostructure with a vertical transport channel [PDF]

Nature Communications
The realization of room-temperature-operated, high-performance, miniaturized, low-power-consumption and Complementary Metal-Oxide-Semiconductor (CMOS)-compatible mid-infrared photodetectors is highly desirable for next-generation optoelectronic ...
Jianfeng Wu, Jialin Zhang, Ruiqi Jiang, Hao Wu, Shouheng Chen, Xinlei Zhang, Wenhui Wang, Yuanfang Yu, Qiang Fu, Rui Lin, Yueying Cui, Tao Zhou, Zhenliang Hu, Dongyang Wan, Xiaolong Chen, Weida Hu, Hongwei Liu, Junpeng Lu, Zhenhua Ni   +18 more
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HgCdTe energy gap determination from photoluminescence and spectral response measurements [PDF]

Metrology and Measurement Systems, 2023
The temperature dependence of photoluminescence spectra has been studied for the HgCdTe epilayer. At low temperatures, the signal has plenty of band-tail states and shallow/deep defects which makes it difficult to evaluate the material bandgap.
Krzysztof Murawski, Małgorzata Kopytko, Paweł Madejczyk, Kinga Majkowycz, Piotr Martyniuk   +4 more
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