Results 1 to 10 of about 1,311 (157)

Damage Mechanism of HgCdTe Focal Plane Array Detector Irradiated Using Mid-Infrared Pulse Laser [PDF]

open access: yesSensors, 2023
To investigate the damage threshold and mechanism of a mid-infrared HgCdTe focal plane array (FPA) detector, relevant experimental and theoretical studies were conducted.
Yin Zhang   +5 more
doaj   +2 more sources

Experimental Study on Damage Effect of Mid-Infrared Pulsed Laser on Charge Coupled Device (CCD) and HgCgTe Detectors [PDF]

open access: yesSensors
As the weak link in electro-optical imaging systems, photodetectors have always faced the threat of laser damage. In this paper, we experimentally investigated the damage mechanism of the photodetector induced by the out-of-band laser.
Yang Liu   +6 more
doaj   +2 more sources

Interfacial Characteristics of HgCdTe Infrared Detectors Grown on Alternative Substrates [PDF]

open access: yesSensors
To overcome the limitations of CdZnTe substrates for large-format, low-cost HgCdTe infrared focal plane arrays (IRFPAs), the epitaxial growth of HgCdTe films on alternative substrates (e.g., GaAs and Si) has become an important research focus.
Yuanyuan Li   +7 more
doaj   +2 more sources

Impact of Residual Compositional Inhomogeneities on the MCT Material Properties for IR Detectors [PDF]

open access: yesSensors
HgCdTe is a well-known material for state-of-the-art infrared photodetectors. The interd-iffused multilayer process (IMP) is used for Metal–Organic Chemical Vapor Deposition (MOCVD) of HgCdTe heterostructures, enabling precise control of composition.
Jan Sobieski   +5 more
doaj   +2 more sources

Infrared HOT Photodetectors: Status and Outlook [PDF]

open access: yesSensors, 2023
At the current stage of long-wavelength infrared (LWIR) detector technology development, the only commercially available detectors that operate at room temperature are thermal detectors.
Antoni Rogalski   +3 more
doaj   +2 more sources

Cryogenic Super-Resolution Imaging of Local Photocurrent in Photoconductive Infrared Detectors [PDF]

open access: yesSensors
The uniformity of local photoelectric properties in infrared detectors is critical for detection sensitivity. However, micro-nano-scale surface abnormalities introduced during mercury cadmium telluride (HgCdTe) fabrication systematically degrade in-plane
Lei Ma   +6 more
doaj   +2 more sources

Balancing the Number of Quantum Wells in HgCdTe/CdHgTe Heterostructures for Mid-Infrared Lasing [PDF]

open access: yesNanomaterials, 2022
HgCdTe-based heterostructures with quantum wells (QWs) are a promising material for semiconductor lasers in the atmospheric transparency window (3–5 μm) thanks to the possibility of suppressing Auger recombination due to the no-parabolic law of carrier ...
Mikhail A. Fadeev   +10 more
doaj   +2 more sources

Research on Electro-Optical Characteristics of Infrared Detectors with HgCdTe Operating at Room Temperature [PDF]

open access: yesSensors, 2023
This paper presents a thorough analysis of the current–voltage characteristics of uncooled HgCdTe detectors optimized for different spectral ranges. HgCdTe heterostructures were grown by means of metal–organic chemical vapor deposition (MOCVD) on GaAs ...
Paweł Madejczyk   +2 more
doaj   +2 more sources

HgCdTe-based heterostructures for terahertz photonics [PDF]

open access: yesAPL Materials, 2017
Due to their specific physical properties, HgCdTe-based heterostructures are expected to play an important role in terahertz photonic systems. Here, focusing on gated devices presenting inverted band ordering, we evidence an enhancement of the terahertz ...
S. Ruffenach   +16 more
doaj   +3 more sources

High-sensitivity, high-speed, broadband mid-infrared photodetector enabled by a van der Waals heterostructure with a vertical transport channel [PDF]

open access: yesNature Communications
The realization of room-temperature-operated, high-performance, miniaturized, low-power-consumption and Complementary Metal-Oxide-Semiconductor (CMOS)-compatible mid-infrared photodetectors is highly desirable for next-generation optoelectronic ...
Jianfeng Wu   +18 more
doaj   +2 more sources

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