Results 11 to 20 of about 13,032 (198)
HgCdTe energy gap determination from photoluminescence and spectral response measurements [PDF]
Metrology and Measurement Systems, 2023 The temperature dependence of photoluminescence spectra has been studied for the HgCdTe epilayer. At low temperatures, the signal has plenty of band-tail states and shallow/deep defects which makes it difficult to evaluate the material bandgap.
Krzysztof Murawski +4 more
doaj +1 more source
Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2020 In the past decade, there has been significant progress in development of the colloidal quantum dot (CQD) photodetectors. The QCD’s potential advantages include: cheap and easy fabrications, size-tuneable across wide infrared spectral region, and direct ...
A. Rogalski +3 more
doaj +1 more source
Crystals, 2021 The mid-wave single-crystal HgCdTe (211) films were successfully grown on GaAs (211) B substrates by molecular beam epitaxy (MBE). Microstructure and optical properties of the MBE growth HgCdTe films grown at different temperatures were characterized by ...
Xiao-Fang Qiu +7 more
doaj +1 more source
Journal of Engineering Science (Chişinău), 2018 Infrared detectors have wide application in a range of industry sectors, including defence, astronomy, medicine, environmental safety, and remote sensing. The applications requiring the highest sensitivity over a broad spectrum of wavelengths are usually
Titu-Marius I. Băjenescu
doaj +1 more source
Van der Waals Epitaxy of HgCdTe Thin Films for Flexible Infrared Optoelectronics
Advanced Materials Interfaces, 2023 Van der Waals epitaxial (vdW) growth of semiconductor thin films on 2D layered substrates has recently attracted considerable attention since it provides a potential pathway for realizing monolithically integrated devices and flexible devices.
Wenwu Pan +5 more
doaj +1 more source
Materials Research Express, 2021 The influence of the near-surface graded-gap layer formed by annealing of HgCdTe grown by liquid phase epitaxy on the capacitance-voltage characteristics of its MIS structure was studied.
Qi Lu +4 more
doaj +1 more source
Trends in Performance Limits of the HOT Infrared Photodetectors
Applied Sciences, 2021 The cryogenic cooling of infrared (IR) photon detectors optimized for the mid- (MWIR, 3–5 µm) and long wavelength (LWIR, 8–14 µm) range is required to reach high performance. This is a major obstacle for more extensive use of IR technology.
Antoni Rogalski +3 more
doaj +1 more source
Non-Radiative Transitions of Holes on Mercury Vacancies in Narrow-Gap HgCdTe
Photonics, 2022 Mercury vacancies, acting as double acceptors, are the dominant point defects in ternary HgCdTe alloys. Though HgCdTe is one of the leading materials in infrared optoelectronics, the energy spectra of the vacancies are still a matter of some debate. This
Dmitry V. Kozlov +9 more
doaj +1 more source
Performance limitations of GaAs/AlGaAs infrared superlattices [PDF]
, 1989 The performance of the GaAs/AlGaAs superlattice as an infrared detecting material is modeled as a function of temperature for two cutoff wavelengths, namely, 8.3 and 10.0 µm.
Kinch, M. A., Yariv, A.
core +1 more source
ATLAST detector needs for direct spectroscopic biosignature characterization in the visible and near-IR [PDF]
, 2015 Are we alone? Answering this ageless question will be a major focus for astrophysics in coming decades. Our tools will include unprecedentedly large UV-Optical-IR space telescopes working with advanced coronagraphs and starshades.
Bolcar, Matthew R. +8 more
core +3 more sources