Results 41 to 50 of about 32,490,366 (244)

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-k Dielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

open access: yes, 2017
Atomic layer deposited (ALD) high-dielectric-constant (high-k )materials have foundextensiveapplications ina variety ofelectronic, optical ...
J. Gaskins   +19 more
semanticscholar   +1 more source

Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics

open access: yesApplied Physics Letters, 2018
High quality sub-10 nm high-k dielectrics are deposited on top of MoS2 and evaluated using a dual-gate field effect transistor configuration. Comparison between top-gate HfO2 and an Al2O3/HfO2 bilayer shows significant improvement in device performance ...
P. Bolshakov   +6 more
semanticscholar   +1 more source

Genomic Diversity and Clinical Variability in Pediatric Primary Cutaneous Anaplastic Large Cell Lymphoma: A Case Series

open access: yesPediatric Blood &Cancer, EarlyView.
ABSTRACT Primary cutaneous anaplastic large cell lymphoma (pcALCL) is a rare pediatric CD30‐positive T‐cell lymphoproliferative disorder with an excellent prognosis, but its genomic drivers are poorly defined. We report three children with skin‐limited disease demonstrating striking molecular heterogeneity, including NPM::ALK, NUP214::FRK, and a novel ...
Shoshana Greenberger   +7 more
wiley   +1 more source

Padovan numbers which are concatenations of three Padovan or Perrin numbers [PDF]

open access: yesNotes on Number Theory and Discrete Mathematics
This paper presents all Padovan numbers that can be written as the concatenation of three Padovan or Perrin numbers under a certain constraint. Namely, we consider the Diophantine equations Pₜ=10ᵈ⁺ˡPₘ+10ˡPₙ+Pᵣ and Pₜ=10ᵈ⁺ˡRₘ+10ˡRₙ+Rᵣ, where k,m,n,r,d and
Fatih Erduvan
doaj   +1 more source

The Combined Effect of Obesity and Contraceptive Use on Pulmonary Embolism in Adolescent Females Residing in the United States

open access: yesPediatric Blood &Cancer, EarlyView.
ABSTRACT Background Combined oral contraceptive (COC) use in obese adult women dramatically increases the relative risk of developing a pulmonary embolism (PE). The risk of a PE in obese adolescent females taking contraceptives is currently unknown. The purpose of this investigation was to determine the effect of body mass index (BMI) and contraceptive
John Puetz, Joanne Salas
wiley   +1 more source

High-K Isomerism

open access: yesNuclear Physics A, 2005
Recent results on the identification of high- K isomers in the Yb-Lu-Hf-Ta region populated using deep-inelastic reactions are presented in the context of the expectations for the formation of multi-quasiparticle states close to and to the right of the stability line. Factors that affect the purity of the K -quantum number include chance degeneracies,
openaire   +2 more sources

Are Fertility Preservation Procedures Before Gonadotoxic Therapy and Hematopoietic Stem Cell Transplantation Feasible and Safe in Very Young Children? A Retrospective Cohort Study

open access: yesPediatric Blood &Cancer, EarlyView.
ABSTRACT Background Fertility preservation (FP) is increasingly integrated into the care of pediatric patients exposed to gonadotoxic therapy or conditioning for hematopoietic stem cell transplantation (HSCT), yet perioperative data in infants and toddlers remain scarce.
Kerstin Saalabian   +13 more
wiley   +1 more source

Investigation of high-K states in 252No\u2028

open access: yesPhys. Rev. C 86, 044318 (2012)
, 2012
peerReviewed
B.Sulignano   +38 more
openaire   +2 more sources

Spray Pyrolysis Technique; High-K Dielectric Films and Luminescent Materials: A Review

open access: yesMicromachines, 2018
The spray pyrolysis technique has been extensively used to synthesize materials for a wide variety of applications such as micro and sub-micrometer dimension MOSFET´s for integrated circuits technology, light emitting devices for displays, and solid ...
C. Falcony   +2 more
semanticscholar   +1 more source

Optimum High-k Oxide for the Best Performance of Ultra-Scaled Double-Gate MOSFETs [PDF]

open access: yesIEEE transactions on nanotechnology, 2015
A widely used technique to mitigate gate leakage in ultrascaled metal oxide semiconductor field effect transistors ( mosfets) is the use of high-k dielectrics, which provide the same equivalent oxide thickness (EOT) as SiO2, but thicker physical layers ...
Mehdi Salmani-Jelodar   +5 more
semanticscholar   +1 more source

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