Results 31 to 40 of about 4,276,819 (295)

4539 Building a Translational Science pipeline: The Indiana CTSI STEM K-12 Program

Journal of Clinical and Translational Science, 2020
OBJECTIVES/GOALS: Develop strong network of science teachers interested in promoting scientific research to their students.Place students in an immersive summer research internship that, when possible, matches their career interests.Expose students to ...
Elmer Sanders, Vanessa Barth, Leigh-Ann Cruz, Ilesha Sherrer, Jacob Olson, Emily Speidell, Elvia Solis, Sharon Harrison, Amy Hinshaw, James A. McAteer   +9 more
doaj   +1 more source

High-K Isomerism

Nuclear Physics A, 2005
Recent results on the identification of high- K isomers in the Yb-Lu-Hf-Ta region populated using deep-inelastic reactions are presented in the context of the expectations for the formation of multi-quasiparticle states close to and to the right of the stability line. Factors that affect the purity of the K -quantum number include chance degeneracies,
openaire   +2 more sources

The interface between silicon and a high-k oxide

, 2004
The ability to follow Moore's Law has been the basis of the tremendous success of the semiconductor industry in the past decades. To date, the greatest challenge for device scaling is the required replacement of silicon dioxide-based gate oxides by high ...
Christopher R. Ashman, Clemens J. Först, GE Moore, H Ishiwara, H Mori, J Robertson, J Robertson, J Wang, JP Perdew, Karlheinz Schwarz, M Alexe, MG Gillan, P Hohenberg, PE Blöchl, Peter E. Blöchl, R Car, R Droopad, RA McKee, RA McKee, SA Chambers, TA Noland, TW Kim, W Kohn, WC Fan, X Yao, X Zhang, Y Kado, Y Liang   +27 more
core   +1 more source

The Doctrine of Exhaustion of Union Remedies [PDF]

, 1952
High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance.
Montemuro, Frank J., Jr.
core   +3 more sources

High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO₂/SiO₂ Stacked Gate Dielectric in Trench Structures

Nanomaterials
The progression of SiC MOSFET technology from planar to trench structures requires optimized gate oxide layers within the trench to enhance device performance.
Qimin Huang, Yunduo Guo, Anfeng Wang, Lin Gu, Zhenyu Wang, Chengxi Ding, Yi Shen, Hongping Ma, Qingchun Zhang   +8 more
doaj   +1 more source

Enhanced Channel Mobility at Sub-nm EOT by Integration of a TmSiO Interfacial Layer in HfO₂/TiN High-k/Metal Gate MOSFETs

IEEE Journal of the Electron Devices Society, 2015
Integration of a high-k interfacial layer (IL) is considered the leading technological solution to extend the scalability of Hf-based high-k/metal gate CMOS technology.
Eugenio Dentoni Litta, Per-Erik Hellstrom, Mikael Ostling   +2 more
doaj   +1 more source

The new insight into the inflammatory response following focused ultrasound-mediated blood–brain barrier disruption

Fluids and Barriers of the CNS, 2022
Background Despite the great potential of FUS-BBB disruption (FUS-BBBD), it is still controversial whether FUS-BBBD acts as an inducing factor of neuro-inflammation or not, and the biological responses after FUS-BBBD triggers the inflammatory process are
Hyo Jin Choi, Mun Han, Hyeon Seo, Chan Yuk Park, Eun-Hee Lee, Juyoung Park   +5 more
doaj   +1 more source

Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation [PDF]

, 2017
MOS Capacitors are demonstrated on 4H-SiC using an octahedral ABO3 ferroic thin-film as a dielectric prepared on several buffer layers. Five samples were prepared: ABO3 on SiC, ABO3 on SiC with a SiO2 buffer (10 nm and 40 nm) and ABO3 on SiC with an ...
Dai, Tianxiang, Fisher, Craig A., Hamilton, Dean P., Jennings, M. R. (Michael R.), Li, Fan, Mawby, P. A. (Philip A.), Pérez-Tomás, Amador, Russell, Stephen, Sharma, Yogesh K.   +8 more
core   +1 more source

An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors

Sensors, 2018
Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc.
Jiangwei Liu, Yasuo Koide
doaj   +1 more source

A self-consistent quantal description of high-K states in the tilted-axis cranking model [PDF]

, 2001
A self-consistent and quantal description of high-$K$ bands is given in the framework of the tilted-axis cranking model. (With a $\theta=90^{\circ}$ tilt angle with respect to $x$-axis, this cranking model is equivalent to the $z$-axis cranking.) The ...
Ahmad Ansari, Bengtsson, Dimitrov, Egido, Faessler, Frauendorf, Frauendorf, Hamamoto, Hamamoto, Hara, Horibata, Kumar, Madokoro, Makito Oi, Möller, Oi, Oi, Oi, Philip M Walker, Purry, Ring, Ring, Tajima, Tajima, Walker   +24 more
core   +2 more sources