Results 31 to 40 of about 27,040,870 (237)

Enhanced Channel Mobility at Sub-nm EOT by Integration of a TmSiO Interfacial Layer in HfO₂/TiN High-k/Metal Gate MOSFETs

IEEE Journal of the Electron Devices Society, 2015
Integration of a high-k interfacial layer (IL) is considered the leading technological solution to extend the scalability of Hf-based high-k/metal gate CMOS technology.
Eugenio Dentoni Litta, Per-Erik Hellstrom, Mikael Ostling   +2 more
doaj   +1 more source

A non-standard numerical scheme for an alcohol-abuse model with induced-complications

Heliyon, 2023
The prevalence of alcohol-related fatalities worldwide is on the ascendancy not only Ghana, but worldwide. Although the ramifications of alcohol consumption have been the subject of several studies, alcoholism remains a serious concern in public health ...
Eric Abaa Baba Sandow, Baba Seidu, Stephen Abagna   +2 more
doaj   +1 more source

An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors

Sensors, 2018
Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc.
Jiangwei Liu, Yasuo Koide
doaj   +1 more source

FRICTION BETWEEN FOOT, SOCKS AND INSOLES [PDF]

Journal of the Egyptian Society of Tribology, 2010
The present work discusses the friction between foot, socks and insoles in order to provide comfort and avoid the blister development caused by shear.
A. T. Hasouna, W. Y. Ali, M. K. Mohamed
doaj   +3 more sources

Enhanced electrical stability of IGZO thin-film transistors using atomic layer deposited Al2O3/HfO2 dual-layer gate insulator

Frontiers in Materials
This study investigates the stability of positive bias temperature stress (PBTS) in bottom-gate indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) incorporating atomic layer deposited Al2O3/HfO2 dual-layer gate insulators (GIs).
Shaocong Lv, Weilin Wang, Shuaiying Zheng, Chengyuan Wang, Qian Xin, Yuxiang Li, Aimin Song, Aimin Song, Jaekyun Kim, Jidong Jin, Jiawei Zhang   +10 more
doaj   +1 more source

Ara yüzey seviyelerinin ve seri direncin Sc2O3 MOS kapasitörünün elektriksel karakteristiği üzerine etkisi

Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2018
Bu çalışmanın amacı, ara yüzey seviyelerinin ve seri direcin(Rs) Sc2O3 (Skandiyum oksit) MOS (Metal OksitYarıiletken) kapasitörünün elektriksel karakteristiği üzerine etkisini frekansabağlı olarak incelemektir.
Ercan Yılmaz, Ayşegül Kahraman
doaj   +1 more source

European Standard Clinical Practice Guideline and EXPeRT Recommendations for the Diagnosis and Management of Gastroenteropancreatic Neuroendocrine Neoplasms in Children and Adolescents

Pediatric Blood &Cancer, EarlyView.
ABSTRACT Pediatric gastroenteropancreatic neuroendocrine neoplasms (GEP‐NENs) are extremely rare and clinically heterogeneous. Management has largely been extrapolated from adult practice. This European Standard Clinical Practice Guideline (ESCP), developed by the EXPeRT network in collaboration with adult NEN experts, provides (adult) evidence ...
Michaela Kuhlen, Calogero Virgone, Antje Redlich, Michael Abele, Ricardo Lopez‐Almaraz, Tal Ben‐Ami, Ewa Bien, Gianni Bisogno, Maja Mazic Cesen, Andrea Ferrari, Malgorzata A. Krawczyk, Yves Reguerre, Dominik T. Schneider, Ines B. Brecht, Charlotte Rigaud, Bilgehan Yalcin, Rainer Claus, Christian Vokuhl, Constantin Lapa, Jörg Fuchs, Segolene Hescot, Thomas Walter, Julien Hadoux, Daniel Orbach   +23 more
wiley   +1 more source

Investigation of electrical and material characteristics of high-k / III-V MOS devices and SiOx ReRAMs [PDF]

, 2013
textIn the past few decades, Si-based CMOS technology is approaching to its physical quantum limit by scaling down the gate length and gate oxide thickness to achieve higher drive current for low power and high speed application.
Wang, Yanzhen
core  

Pushing the high-k scalability limit with a superparaelectric gate layer

Journal of Advanced Ceramics
To meet the expectation set by Moore’s law on transistors, the search for thickness-scalable high dielectric constant (k) gate layers has become an emergent research frontier.
Kun Wang, Chao Liu, Yuan Zhang, Fuyu Lv, Jun Ouyang, Houbing Huang, Rui-long Yang, Yu-Yao Zhao, Hongbo Cheng, Hanfei Zhu, Xiaoming Shi, Yun Tian   +11 more
doaj   +1 more source

The new insight into the inflammatory response following focused ultrasound-mediated blood–brain barrier disruption

Fluids and Barriers of the CNS, 2022
Background Despite the great potential of FUS-BBB disruption (FUS-BBBD), it is still controversial whether FUS-BBBD acts as an inducing factor of neuro-inflammation or not, and the biological responses after FUS-BBBD triggers the inflammatory process are
Hyo Jin Choi, Mun Han, Hyeon Seo, Chan Yuk Park, Eun-Hee Lee, Juyoung Park   +5 more
doaj   +1 more source