Results 11 to 20 of about 4,276,819 (295)
IEEE Journal of the Electron Devices Society, 2021 For improving self-heating effects (SHEs) in gate-all-around metal-oxide-semiconductor field-effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists of hafnium dioxide (HfO2) and silicon dioxide (SiO2), which has high
Young Suh Song +5 more
doaj +1 more source
Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments
Micromachines, 2022 The decoupled-plasma nitridation treatment process is an effective recipe for repairing the trap issues when depositing high-k gate dielectric. Because of this effect, electrical performance is not only increased with the relative dielectric constant ...
Shou-Yen Chao +4 more
doaj +1 more source
Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review
Micromachines, 2018 Semiconductor device dimensions have been decreasing steadily over the past several decades, generating the need to overcome fundamental limitations of both the materials they are made of and the fabrication techniques used to build them.
Xaver Klemenschits +2 more
doaj +1 more source
IEEE Access, 2020 In this paper, the GaN-based MIS-HEMTs with Si3N4 single-layer passivation, Al2O3/SiNx bilayer passivation, and ZrO2/SiNx bilayer passivation are demonstrated.
Yutao Cai +7 more
doaj +1 more source
Detection of high k turbulence using two dimensional phase contrast imaging on LHD [PDF]
, 2016 High k turbulence, up to 30 cm(-1), can be measured using the two dimensional CO₂ laser phase contrast imaging system on LHD. Recent hardware improvements and experimental results are presented.
Akiyama, T. +7 more
core +1 more source
Journal of Mathematics Instruction, Social Research and Opinion, 2023 This study sought to investigate students’ perceptions of assessment for learning and the teaching strategies teachers employ in teaching integrated science.
Samuel Agbene +2 more
doaj +1 more source
Effects of high order deformation on superheavy high-$K$ isomers [PDF]
, 2011 Using, for the first time, configuration-constrained potential-energy-surface calculations with the inclusion of $\beta_6$ deformation, we find remarkable effects of the high order deformation on the high-$K$ isomers in $^{254}$No, the focus of recent ...
C. A. Bertulani +4 more
core +3 more sources
Indium diffusion through high-k dielectrics in high-k/InP stacks
Applied Physics Letters, 2013 Evidence of indium diffusion through high-k dielectric (Al2O3 and HfO2) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a POx rich interface.
Dong, H. +11 more
openaire +3 more sources
Dielectric relaxation of high-k oxides [PDF]
Nanoscale Research Letters, 2013 Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion.
Zhao, Chun +4 more
openaire +2 more sources
Hf-based high-k dielectrics for p-Ge MOS gate stacks [PDF]
, 2013 The physical and electrical properties of the gate stack high-k/Al2O3/GeO2/p-Ge were studied in detail, where the high-k is either HfO2 or alloyed HfO2 (HfZrOy, HfGdOx, or HfAlOx).
Caymax, Matty +6 more
core +1 more source