Results 1 to 10 of about 4,299,511 (195)
All-Water-Driven High-k HfO2 Gate Dielectrics and Applications in Thin Film Transistors [PDF]
Nanomaterials, 2023 In this article, we used a simple, non-toxic, environmentally friendly, water-driven route to fabricate the gate dielectric on the Si substrate and successfully integrate the In2O3/HfO2 thin film transistor (TFT).
Fakhari Alam +3 more
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1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance [PDF]
MicromachinesThis paper proposes a 1200V 4H-SiC MOSFET incorporating a High-K dielectric-integrated fused source-gate (HKSG) structure, engineered to concurrently enhance the third-quadrant operation and high-frequency figure of merit (HF-FOM).
Mingyue Li +5 more
doaj +2 more sources
Organoleptic evaluation of Ladakhi churpe enriched with apricot and spinach [PDF]
Journal of Veterinary and Animal Sciences, 2022 Dried dairy products viz. churpe-balls and churpe-strips were developed with the incorporation of apricot powder into cottage cheese at different levels (05, 10, 15 and 20%) and spinach powder at levels 03, 06, 09 and 12 percent, respectively.
Anwar Hussain +4 more
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Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers
Journal of Telecommunications and Information Technology, 2023 The transition regions of GdSiO/SiOx and HfO2/ SiOx interfaces have been studied with the high-k layers deposited on silicon substrates. The existence of transition regions was verified by medium energy ion scattering (MEIS) data and transmission ...
Olof Engström +8 more
doaj +3 more sources
IEEE Access, 2021 In this work, a simulation methodology, whose inputs are Conductive Atomic Force Microscope (CAFM) experimental data, is proposed to evaluate the impact of nanoscale variability sources related to the polycrystallization of high-k dielectrics (i.e ...
A. Ruiz +5 more
doaj +1 more source
Micromachines, 2021 We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance–voltage measurements.
Sivaramakrishnan Ramesh +10 more
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Memristors with Nociceptor Characteristics Using Threshold Switching of Pt/HfO2/TaOx/TaN Devices
Nanomaterials, 2022 As artificial intelligence technology advances, it is necessary to imitate various biological functions to complete more complex tasks. Among them, studies have been reported on the nociceptor, a critical receptor of sensory neurons that can detect ...
Minsu Park +3 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2021 For improving self-heating effects (SHEs) in gate-all-around metal-oxide-semiconductor field-effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists of hafnium dioxide (HfO2) and silicon dioxide (SiO2), which has high
Young Suh Song +5 more
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Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments
Micromachines, 2022 The decoupled-plasma nitridation treatment process is an effective recipe for repairing the trap issues when depositing high-k gate dielectric. Because of this effect, electrical performance is not only increased with the relative dielectric constant ...
Shou-Yen Chao +4 more
doaj +1 more source
Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review
Micromachines, 2018 Semiconductor device dimensions have been decreasing steadily over the past several decades, generating the need to overcome fundamental limitations of both the materials they are made of and the fabrication techniques used to build them.
Xaver Klemenschits +2 more
doaj +1 more source