Results 1 to 10 of about 4,276,819 (295)

High-K dielectric sulfur-selenium alloys. [PDF]

Sci Adv, 2019
The synthesis of high-K flexible dielectric material is presented using two commonly used inorganic materials S and Se.
Susarla S, Tsafack T, Owuor PS, Puthirath AB, Hachtel JA, Babu G, Apte A, Jawdat BI, Hilario MS, Lerma A, Calderon HA, Robles Hernandez FC, Tam DW, Li T, Lupini AR, Idrobo JC, Lou J, Wei B, Dai P, Tiwary CS, Ajayan PM.   +20 more
europepmc   +9 more sources

All-Water-Driven High-k HfO₂ Gate Dielectrics and Applications in Thin Film Transistors [PDF]

Nanomaterials, 2023
In this article, we used a simple, non-toxic, environmentally friendly, water-driven route to fabricate the gate dielectric on the Si substrate and successfully integrate the In2O3/HfO2 thin film transistor (TFT).
Fakhari Alam, Gang He, Jin Yan, Wenhao Wang   +3 more
doaj   +2 more sources

1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance [PDF]

Micromachines
This paper proposes a 1200V 4H-SiC MOSFET incorporating a High-K dielectric-integrated fused source-gate (HKSG) structure, engineered to concurrently enhance the third-quadrant operation and high-frequency figure of merit (HF-FOM).
Mingyue Li, Zhaofeng Qiu, Tianci Li, Yi Kang, Shan Lu, Xiarong Hu   +5 more
doaj   +2 more sources

High-K Strategy Scale: A Measure of the High-K Independent Criterion of Fitness

Evolutionary Psychology, 2006
The present study aimed at testing whether factors documented in the literature as being indicators of a high-K reproductive strategy have effects on fitness in extant humans.
Cezar Giosan
doaj   +2 more sources

Organoleptic evaluation of Ladakhi churpe enriched with apricot and spinach [PDF]

Journal of Veterinary and Animal Sciences, 2022
Dried dairy products viz. churpe-balls and churpe-strips were developed with the incorporation of apricot powder into cottage cheese at different levels (05, 10, 15 and 20%) and spinach powder at levels 03, 06, 09 and 12 percent, respectively.
Anwar Hussain, Jigmet Yangchan, Phuntsog Tundup, Sonam Spaldon, Disket Dolkar   +4 more
doaj   +1 more source

Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers

Journal of Telecommunications and Information Technology, 2023
The transition regions of GdSiO/SiOx and HfO2/ SiOx interfaces have been studied with the high-k layers deposited on silicon substrates. The existence of transition regions was verified by medium energy ion scattering (MEIS) data and transmission ...
Olof Engström, Bahman Raeissi, Johan Piscator, Ivona Z Mitrovic, Stephen Hall, Heinrich D. B. Gottlob, Mathias Schmidt, Paul K. Hurley, Karim Cherkaoui   +8 more
doaj   +3 more sources

Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data

IEEE Access, 2021
In this work, a simulation methodology, whose inputs are Conductive Atomic Force Microscope (CAFM) experimental data, is proposed to evaluate the impact of nanoscale variability sources related to the polycrystallization of high-k dielectrics (i.e ...
A. Ruiz, C. Couso, N. Seoane, M. Porti, A. J. Garcia-Loureiro, M. Nafria   +5 more
doaj   +1 more source

High-K band in 140Gd [PDF]

Brazilian Journal of Physics, 2006
High-spin states in the neutron-deficient140Gd nucleus have been studied with the 92Mo(54Fe,a2p) reaction at a beam energy of 240 MeV. The level scheme of 140Gd was considerably extended from what was previously known. In this work we concentrate on one of the 9 bands observed, which presents relatively strong M1 transitions and negligible signature ...
Oliveira, J.R.B., Falla-Sotelo, F., Rao, M.N., Alcántara-Núñez, J.A., Cybulska, E.W., Medina, N.H., Ribas, R.V., Rizzutto, M.A., Seale, W.A., Bazzacco, D., Brandolini, F., Lunardi, S., Rossi-Alvarez, C., Petrache, C., Podolyák, Zs., Ur, C.A., Acuña, D. de, Angelis, G.de, Farnea, E., Foltescu, D., Gadea, A., Napoli, D.R., Poli, M. de, Spolaore, P., Ionescu-Bujor, M., Iordachescu, A.   +25 more
openaire   +4 more sources

Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories

Micromachines, 2021
We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance–voltage measurements.
Sivaramakrishnan Ramesh, Arjun Ajaykumar, Lars-Åke Ragnarsson, Laurent Breuil, Gabriel Khalil El Hajjam, Ben Kaczer, Attilio Belmonte, Laura Nyns, Jean-Philippe Soulié, Geert Van den bosch, Maarten Rosmeulen   +10 more
doaj   +1 more source

Memristors with Nociceptor Characteristics Using Threshold Switching of Pt/HfO₂/TaOx/TaN Devices

Nanomaterials, 2022
As artificial intelligence technology advances, it is necessary to imitate various biological functions to complete more complex tasks. Among them, studies have been reported on the nociceptor, a critical receptor of sensory neurons that can detect ...
Minsu Park, Beomki Jeon, Jongmin Park, Sungjun Kim   +3 more
doaj   +1 more source