Results 21 to 30 of about 27,040,870 (237)

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices

IEEE Access, 2020
In this paper, the GaN-based MIS-HEMTs with Si3N4 single-layer passivation, Al2O3/SiNx bilayer passivation, and ZrO2/SiNx bilayer passivation are demonstrated.
Yutao Cai, Yang Wang, Ye Liang, Yuanlei Zhang, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Cezhou Zhao   +7 more
doaj   +1 more source

Study of B0s → J/ψπ+π−K+K− decays [PDF]

, 2021
The decays B0sBs0 → J/ψπ+π−K+K− are studied using a data set corresponding to an integrated luminosity of 9 fb−1, collected with the LHCb detector in proton-proton collisions at centre-of-mass energies of 7, 8 and 13 TeV.
De Bruyn, K.; id_orcid, van Veghel, M., Onderwater, C. J. G., De Bruyn, K., Onderwater, C. J. G.; id_orcid   +4 more
core   +2 more sources

An Investigation of Students’ Perception of Assessment for Learning in Integrated Science: A Case Study of Potsin T. I. Ahmadiyya Senior High School

Journal of Mathematics Instruction, Social Research and Opinion, 2023
This study sought to investigate students’ perceptions of assessment for learning and the teaching strategies teachers employ in teaching integrated science.
Samuel Agbene, Usman Baidoo, Stephen Atepor   +2 more
doaj   +1 more source

Determination of Yield and Some Yield Components of The Registered Dry Bean (Phaseolus vulgaris L.) Cultivars of Turkey in Van Conditions

ISPEC Journal of Agricultural Sciences, 2021
This study was conducted to determine cultivars which grown at Van Gurpinar ecological conditions and their some important agricultural and plant properties in 2013 year in center of Gurpinar.
İlhan ZİREK, Necat TOĞAY
doaj   +1 more source

High-k/InGaAs interface defects at cryogenic temperature [PDF]

, 2023
Oxide defects in the high-k/InGaAs MOS system are investigated. The behaviour of these traps is explored from room temperature down to 10 K. This study reveals that the exchange of free carriers between oxide states and either the conduction or the ...
La Torraca, P., Lin, J., L. Larcher, Padovani, A., Hurley, P. K., L.E. Wernersson, Larcher, L., Andersen, A., J. Lin, P.K. Hurley, Wernersson, L. E., A. Padovani, Cherkaoui, K., K. Cherkaoui, N. Maraviglia, Maraviglia, N., P. La Torraca, A. Andersen   +17 more
core   +1 more source

Correlation between defects, leakage currents and conduction mechanisms in thin high-k dielectric layers

, 2022
S.411-422Results on leakage currents and conduction mechanisms in various high-k dielectric layers (Zr-, Hf-, HfTi-silicates and Ta2O5) are presented.
Atanassova, E., Paskaleva, A., Lemberger, M., Bauer, A.J.   +3 more
core   +1 more source

Approximate Nonlocal Symmetries for a Perturbed Schrödinger Equation with a Weak Infinite Power-Law Memory

AppliedMath, 2022
A nonlocally perturbed linear Schrödinger equation with a small parameter was derived under the assumption of low-level fractionality by using one of the known general nonlocal wave equations with an infinite power-law memory.
Stanislav Yu. Lukashchuk
doaj   +1 more source

On the Property of Linear Autonomy for Symmetries of Fractional Differential Equations and Systems

Mathematics, 2022
The problem of finding Lie point symmetries for a certain class of multi-dimensional nonlinear partial fractional differential equations and their systems is studied.
Stanislav Yu. Lukashchuk
doaj   +1 more source

4539 Building a Translational Science pipeline: The Indiana CTSI STEM K-12 Program

Journal of Clinical and Translational Science, 2020
OBJECTIVES/GOALS: Develop strong network of science teachers interested in promoting scientific research to their students.Place students in an immersive summer research internship that, when possible, matches their career interests.Expose students to ...
Elmer Sanders, Vanessa Barth, Leigh-Ann Cruz, Ilesha Sherrer, Jacob Olson, Emily Speidell, Elvia Solis, Sharon Harrison, Amy Hinshaw, James A. McAteer   +9 more
doaj   +1 more source

High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO₂/SiO₂ Stacked Gate Dielectric in Trench Structures

Nanomaterials
The progression of SiC MOSFET technology from planar to trench structures requires optimized gate oxide layers within the trench to enhance device performance.
Qimin Huang, Yunduo Guo, Anfeng Wang, Lin Gu, Zhenyu Wang, Chengxi Ding, Yi Shen, Hongping Ma, Qingchun Zhang   +8 more
doaj   +1 more source