ISPEC Journal of Agricultural Sciences, 2021 This study was conducted to determine cultivars which grown at Van Gurpinar ecological conditions and their some important agricultural and plant properties in 2013 year in center of Gurpinar.
İlhan ZİREK, Necat TOĞAY
doaj +1 more source
Microscopic calculation of transition intensities for vibrational bands and high-K isomers [PDF]
, 1998 We investigate the effect of the Coriolis coupling and the residual interactions upon the inter-band transition rates for the vibrational bands and the decay of two-quasiparticle high-K isomers.Comment: 5 pages, RevTex using epsf.sty, 2 postscript ...
Bohr Å +3 more
core +2 more sources
Regularized cosmological power spectrum and correlation function in modified gravity models [PDF]
, 2014 Based on the multi-point propagator expansion, we present resummed perturbative calculations for cosmological power spectra and correlation functions in the context of modified gravity.
Bernardeau, Francis +4 more
core +4 more sources
The Electrochemical Society Interface, 2005 Microelectronics has been the most important driving force for almost all kinds of technology evolutions in the past four decades. The size of the metal-oxide-semiconductor (MOS) transistor, which underpins Si microelectronics, has been reduced to a factor of 1,000.
Durga Misra, Hiroshi Iwai, Hei Wong
openaire +1 more source
AppliedMath, 2022 A nonlocally perturbed linear Schrödinger equation with a small parameter was derived under the assumption of low-level fractionality by using one of the known general nonlocal wave equations with an infinite power-law memory.
Stanislav Yu. Lukashchuk
doaj +1 more source
On the Property of Linear Autonomy for Symmetries of Fractional Differential Equations and Systems
Mathematics, 2022 The problem of finding Lie point symmetries for a certain class of multi-dimensional nonlinear partial fractional differential equations and their systems is studied.
Stanislav Yu. Lukashchuk
doaj +1 more source
Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks [PDF]
, 2014 The introduction of InGaAs as a channel material for complementary metal-oxide-semiconductor technology presents major challenges in terms of the characterization of the various defects that affect the performance and reliability.
Eizenberg, M. +3 more
core +1 more source
From surface to volume plasmons in hyperbolic metamaterials: General existence conditions for bulk high-k waves in metal-dielectric and graphene-dielectric multilayers [PDF]
, 2014 We theoretically investigate general existence conditions for broadband bulk large-wavevector (high-k) propagating waves (such as volume plasmon polaritons in hyperbolic metamaterials) in subwavelength periodic multilayer structures.
Andryieuski, Andrei +3 more
core +2 more sources
Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics [PDF]
, 2004 Gate capacitance of metal-oxide-semiconductor devices with ultra-thin high-K gate-dielectric materials is calculated taking into account the penetration of wave functions into the gate-dielectric.
A. Haque +16 more
core +1 more source
A non-standard numerical scheme for an alcohol-abuse model with induced-complications
Heliyon, 2023 The prevalence of alcohol-related fatalities worldwide is on the ascendancy not only Ghana, but worldwide. Although the ramifications of alcohol consumption have been the subject of several studies, alcoholism remains a serious concern in public health ...
Eric Abaa Baba Sandow +2 more
doaj +1 more source