Results 21 to 30 of about 4,299,561 (242)

Investigation of high-K states in 252No\u2028

Phys. Rev. C 86, 044318 (2012)
, 2012
peerReviewed
B.Sulignano, Ch.Theisen, J.-P.Delaroche, M.Girod, J.Ljungvall, D.Ackermann, S.Antalic, O.Dorvaux, A.Drouart, B.Gall, A.Gorgen, P.T.Greenlees, K.Hauschild, R.-D.Herzberg, F.P.Hessberger, U.Jakobsson, P.Jones, R.Julin, S.Juutinen, S.Ketelhut, W.Korten, M.Leino, A.Lopez-Martens, M.Nyman, A.Obertelli, J.Pakarinen, P.Papadakis, E.Parr, P.Peura, J.Piot, P.Rahkila, D.Rostron, P.Ruotsalainen, J.Saren, C.Scholey, J.Sorri, J.Uusitalo, M.Venhart, M.Zielinska   +38 more
openaire   +2 more sources

A non-standard numerical scheme for an alcohol-abuse model with induced-complications

Heliyon, 2023
The prevalence of alcohol-related fatalities worldwide is on the ascendancy not only Ghana, but worldwide. Although the ramifications of alcohol consumption have been the subject of several studies, alcoholism remains a serious concern in public health ...
Eric Abaa Baba Sandow, Baba Seidu, Stephen Abagna   +2 more
doaj   +1 more source

4539 Building a Translational Science pipeline: The Indiana CTSI STEM K-12 Program

Journal of Clinical and Translational Science, 2020
OBJECTIVES/GOALS: Develop strong network of science teachers interested in promoting scientific research to their students.Place students in an immersive summer research internship that, when possible, matches their career interests.Expose students to ...
Elmer Sanders, Vanessa Barth, Leigh-Ann Cruz, Ilesha Sherrer, Jacob Olson, Emily Speidell, Elvia Solis, Sharon Harrison, Amy Hinshaw, James A. McAteer   +9 more
doaj   +1 more source

FRICTION BETWEEN FOOT, SOCKS AND INSOLES [PDF]

Journal of the Egyptian Society of Tribology, 2010
The present work discusses the friction between foot, socks and insoles in order to provide comfort and avoid the blister development caused by shear.
A. T. Hasouna, W. Y. Ali, M. K. Mohamed
doaj   +3 more sources

High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO₂/SiO₂ Stacked Gate Dielectric in Trench Structures

Nanomaterials
The progression of SiC MOSFET technology from planar to trench structures requires optimized gate oxide layers within the trench to enhance device performance.
Qimin Huang, Yunduo Guo, Anfeng Wang, Lin Gu, Zhenyu Wang, Chengxi Ding, Yi Shen, Hongping Ma, Qingchun Zhang   +8 more
doaj   +1 more source

Enhanced Channel Mobility at Sub-nm EOT by Integration of a TmSiO Interfacial Layer in HfO₂/TiN High-k/Metal Gate MOSFETs

IEEE Journal of the Electron Devices Society, 2015
Integration of a high-k interfacial layer (IL) is considered the leading technological solution to extend the scalability of Hf-based high-k/metal gate CMOS technology.
Eugenio Dentoni Litta, Per-Erik Hellstrom, Mikael Ostling   +2 more
doaj   +1 more source

The new insight into the inflammatory response following focused ultrasound-mediated blood–brain barrier disruption

Fluids and Barriers of the CNS, 2022
Background Despite the great potential of FUS-BBB disruption (FUS-BBBD), it is still controversial whether FUS-BBBD acts as an inducing factor of neuro-inflammation or not, and the biological responses after FUS-BBBD triggers the inflammatory process are
Hyo Jin Choi, Mun Han, Hyeon Seo, Chan Yuk Park, Eun-Hee Lee, Juyoung Park   +5 more
doaj   +1 more source

An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors

Sensors, 2018
Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc.
Jiangwei Liu, Yasuo Koide
doaj   +1 more source

High-K Isomerism

Nuclear Physics A, 2005
Recent results on the identification of high- K isomers in the Yb-Lu-Hf-Ta region populated using deep-inelastic reactions are presented in the context of the expectations for the formation of multi-quasiparticle states close to and to the right of the stability line. Factors that affect the purity of the K -quantum number include chance degeneracies,
openaire   +2 more sources

Enhanced electrical stability of IGZO thin-film transistors using atomic layer deposited Al2O3/HfO2 dual-layer gate insulator

Frontiers in Materials
This study investigates the stability of positive bias temperature stress (PBTS) in bottom-gate indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) incorporating atomic layer deposited Al2O3/HfO2 dual-layer gate insulators (GIs).
Shaocong Lv, Weilin Wang, Shuaiying Zheng, Chengyuan Wang, Qian Xin, Yuxiang Li, Aimin Song, Aimin Song, Jaekyun Kim, Jidong Jin, Jiawei Zhang   +10 more
doaj   +1 more source