Results 21 to 30 of about 32,490,366 (244)
On the Property of Linear Autonomy for Symmetries of Fractional Differential Equations and Systems
The problem of finding Lie point symmetries for a certain class of multi-dimensional nonlinear partial fractional differential equations and their systems is studied.
Stanislav Yu. Lukashchuk
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Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications.
P. Xia +8 more
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A non-standard numerical scheme for an alcohol-abuse model with induced-complications
The prevalence of alcohol-related fatalities worldwide is on the ascendancy not only Ghana, but worldwide. Although the ramifications of alcohol consumption have been the subject of several studies, alcoholism remains a serious concern in public health ...
Eric Abaa Baba Sandow +2 more
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Advances in La-Based High-k Dielectrics for MOS Applications
This paper reviews the studies on La-based high-k dielectrics for metal-oxide-semiconductor (MOS) applications in recent years. According to the analyses of the physical and chemical characteristics of La2O3, its hygroscopicity and defects (oxygen ...
L. Liu, W. M. Tang, P. Lai
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4539 Building a Translational Science pipeline: The Indiana CTSI STEM K-12 Program
OBJECTIVES/GOALS: Develop strong network of science teachers interested in promoting scientific research to their students.Place students in an immersive summer research internship that, when possible, matches their career interests.Expose students to ...
Elmer Sanders +9 more
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FRICTION BETWEEN FOOT, SOCKS AND INSOLES [PDF]
The present work discusses the friction between foot, socks and insoles in order to provide comfort and avoid the blister development caused by shear.
A. T. Hasouna, W. Y. Ali, M. K. Mohamed
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The progression of SiC MOSFET technology from planar to trench structures requires optimized gate oxide layers within the trench to enhance device performance.
Qimin Huang +8 more
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Integration of a high-k interfacial layer (IL) is considered the leading technological solution to extend the scalability of Hf-based high-k/metal gate CMOS technology.
Eugenio Dentoni Litta +2 more
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Background Despite the great potential of FUS-BBB disruption (FUS-BBBD), it is still controversial whether FUS-BBBD acts as an inducing factor of neuro-inflammation or not, and the biological responses after FUS-BBBD triggers the inflammatory process are
Hyo Jin Choi +5 more
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Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc.
Jiangwei Liu, Yasuo Koide
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