Results 101 to 110 of about 33,884,561 (405)
High Frequency dynamics in metallic glasses
, 2006 Using Inelastic X-ray Scattering we studied the collective dynamics of the glassy alloy Ni$_{33}$Zr$_{67}$ in the first pseudo Brillouin zone, an energy-momentum region still unexplored in metallic glasses.
B. Rufflé +7 more
core +1 more source
High Frequency Trading and Mini Flash Crashes [PDF]
, 2012 We analyse all Mini Flash Crashes (or Flash Equity Failures) in the US equity markets in the four most volatile months during 2006-2011. In contrast to previous studies, we find that Mini Flash Crashes are the result of regulation framework and market ...
Golub, Anton +2 more
core +2 more sources
High frequency volatility co-movements in cryptocurrency markets
Journal of international financial markets, institutions, and money, 2019 Through the application of Diagonal BEKK and Asymmetric Diagonal BEKK methodologies to intra-day data for eight cryptocurrencies, this paper investigates not only conditional volatility dynamics of major cryptocurrencies, but also their volatility co ...
Paraskevi Katsiampa +2 more
semanticscholar +1 more source
Pediatric Blood &Cancer, EarlyView.ABSTRACT Background Kaposiform lymphangiomatosis (KLA) is an aggressive complex lymphatic anomaly. Patients exhibit malformed lymphatic vessels and often develop hemorrhagic effusions and elevated angiopoietin‐2 (Ang‐2) levels. A somatic NRAS p.Q61R (NRASQ61R) mutation has been associated with KLA.
C. Griffin McDaniel +3 more
wiley +1 more source
Pediatric Blood &Cancer, EarlyView.ABSTRACT Introduction Pulmonary dysfunction and sleep abnormalities are common in children with sickle cell disease (SCD) and are associated with worse clinical outcomes. Whether spirometry abnormalities are associated with polysomnography (PSG) findings remains unclear.
Ammar Saadoon Alishlash +4 more
wiley +1 more source
AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results
Active and Passive Electronic Components, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al2O3 as a gate dielectric and surface passivation for devices.
S. Taking, D. MacFarlane, E. Wasige
doaj +1 more source
High-frequency dynamics of wave localisation
, 1999 We study the effect of localisation on the propagation of a pulse through a multi-mode disordered waveguide. The correlator of the transmitted wave amplitude u at two frequencies differing by delta_omega has for large delta_omega the stretched ...
A.Z. Genack +15 more
core +1 more source
The Future of High Frequency Circuit Design [PDF]
, 2009 The cut-off wavelengths of integrated silicon transistors have exceeded the die sizes of the chips being fabricated with them. Combined with the ability to integrate billions of transistors on the same die, this size-wavelength cross-over has produced
Hajimiri, Ali
core +1 more source
Prevalence and Trajectory of Household Material Hardship Among Children With Advanced Cancer
Pediatric Blood &Cancer, EarlyView.ABSTRACT Background/Objectives Families of children with advanced cancer living in poverty experience inferior outcomes including poor parent mental health and worse child quality of life. Household material hardship (HMH: food, housing, transportation, and/or utility insecurity) is a modifiable poverty exposure—and potential intervention target—that ...
Sarah Wright +13 more
wiley +1 more source