Results 111 to 120 of about 33,517,134 (252)

High-Frequency Trading Competition

Journal of Financial and Quantitative Analysis, 2018
Theory on high-frequency traders (HFTs) predicts that market liquidity for a security decreases in the number of HFTs trading the security. We test this prediction by studying a new Canadian stock exchange, Alpha, that experienced the entry of 11 HFTs ...
Jonathan Brogaard, Corey Garriott
semanticscholar   +1 more source

Atomic frequency standards for ultra-high-frequency stability [PDF]

The general features of the Hg-199(+) trapped-ion frequency standard are outlined and compared to other atomic frequency standards, especially the hydrogen maser.
Dick, G. J., Maleki, L., Prestage, J. D.
core   +1 more source

Lightweight, high-frequency transformers [PDF]

, 1983
The 25-kVA space transformer was developed under contract by Thermal Technology Laboratory, Buffalo, N. Y. The NASA Lewis transformer technology program attempted to develop the baseline technology. For the 25-kVA transformer the input voltage was chosen
Schwarze, G. E.
core   +1 more source

Effect of Temperature-Dependent Low Oxygen Partial Pressure Annealing on SiC MOS

Nanomaterials
Oxygen post annealing is a promising method for improving the quality of the SiC metal oxide semiconductor (MOS) interface without the introduction of foreign atoms.
Qian Zhang, Nannan You, Jiayi Wang, Yang Xu, Kuo Zhang, Shengkai Wang   +5 more
doaj   +1 more source

Deep level transient spectroscopy: Tracing interface and bulk trap‐induced degradation in AlGaN/GaN‐heterostructure based devices

Information & Functional Materials
The exceptional physical properties of gallium nitride (GaN) position GaN‐based power devices as leading candidates for next‐generation high‐efficiency smart power conversion systems.
Kexin Deng, Sen Huang, Xinhua Wang, Yixu Yao, Yang Yang, Li Yu, Yaoyao Pei, Jiayi An, Qimeng Jiang, Xinyu Liu, Song Yang, Kevin J. Chen   +11 more
doaj   +1 more source

Study on the Oxygen Partial Pressure Dependent Annealing Effect for SiO2/SiC Stack

Advanced Electronic Materials
Post‐oxidation annealing in oxygen (O2) ambient can improve the quality of the SiO2/SiC stack without introducing foreign atoms. In order to reveal the annealing mechanism at different oxygen partial pressures (P(O2)), this work focuses on the dependence
Qian Zhang, Nannan You, Jiayi Wang, Yang Xu, Kuo Zhang, Shengkai Wang   +5 more
doaj   +1 more source

Chromatic and High-frequency cVEP-based BCI Paradigm

, 2015
We present results of an approach to a code-modulated visual evoked potential (cVEP) based brain-computer interface (BCI) paradigm using four high-frequency flashing stimuli.
Aminaka, Daiki, Makino, Shoji, Rutkowski, Tomasz M.   +2 more
core   +1 more source

Local Parametric Estimation in High Frequency Data

, 2018
In this paper, we give a general time-varying parameter model, where the multidimensional parameter possibly includes jumps. The quantity of interest is defined as the integrated value over time of the parameter process $\Theta = T^{-1} \int_0^T \theta_t^
Mykland, Per, Potiron, Yoann
core   +2 more sources

Introducing the Scattering Element Method

IEEE Journal of Microwaves
In this paper we introduce the scattering element method (SEM) as a new generic denomination for a special type of electromagnetic field simulation. The SEM is characterized by the fact that every spatial element of the simulation domain is defined by a ...
Sebastian Paul, Joerg Schoebel
doaj   +1 more source

High-Frequency Design of the Wien-Bridge Oscillator Using Composite Amplifiers [PDF]

, 1987
Huertas Díaz, José Luis, Pérez Verdú, Belén, Rodríguez Vázquez, Ángel Benito   +2 more
core   +1 more source