Results 51 to 60 of about 1,816,478 (387)
, 2000 A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the inverter must ...
Hadley, P., Heij, C. P., Mooij, J. E.
core +1 more source
A wideband noise-canceling CMOS LNA exploiting a transformer [PDF]
, 2006 A broadband LNA incorporating single-ended to differential conversion, has been successfully implemented using a noise-canceling technique and a single on-chip transformer. The LNA achieves a high voltage gain of 19dB, a wideband input match (2.5-4.0 GHz)
Blaakmeer, Stephan C. +3 more
core +5 more sources
Design of New High Step-Up DC-DC Converter Topology for Solar PV Applications
International Journal of Photoenergy, 2021 A new topology for high step-up nonisolated DC-DC converter for solar PV applications is presented in this paper. The proposed high-voltage gain converter topology has many advantages like low-voltage stress on the switches, high gain with low duty ratio,
Shanthi Thangavelu, Prabha Umapathy
doaj +1 more source
A new non-isolated high-gain DC-DC converter for the PV application
e-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023 Small, distributed types of generation like solar photovoltaic (PV) played a significant part in shifting to a clean energy future due to economic factors and governmental laws.
Farha Khan +3 more
doaj +1 more source
A 2.7-kW, 29-MHz class-E/F/sub odd/ amplifier with a distributed active transformer [PDF]
, 2005 A Class-E/Fodd high power amplifier (PA) using the distributed active transformer (DAT) is demonstrated at 29MHz. The DAT combines the output power from four VDMOS push-pull pairs.
Jeon, Sanggeun, Rutledge, David B.
core +1 more source
AlAsSb avalanche photodiodes with a sub-mV/K temperature coefficient of breakdown voltage
, 2011 The temperature dependence of dark current and avalanche gain were measured on AlAsSb p-i-n diodes with avalanche region widths of 80 and 230 nm. Measurements at temperatures ranging from 77 to 295 K showed that the dark current decreases rapidly with ...
Tan, C.H., Xie, S.
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Complementary Symmetry Nanowire Logic Circuits: Experimental Demonstrations and in Silico Optimizations [PDF]
, 2008 Complementary symmetry (CS) Boolean logic utilizes both p- and n-type field-effect transistors (FETs) so that an input logic voltage signal will turn one or more p- or n-type FETs on, while turning an equal number of n- or p-type FETs off.
Heath, James R. +3 more
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A Novel Non-Isolated High-Gain Non-Inverting Interleaved DC–DC Converter
Micromachines, 2023 High-gain DC–DC converters are being drastically utilized in renewable energy generation systems, such as photovoltaic (PV) and fuel cells (FC). Renewable energy sources (RES) persist with low-level output voltage; therefore, high-gain DC–DC converters ...
Farhan Mumtaz +4 more
doaj +1 more source
Development of Thick-foil and Fine-pitch GEMs with a Laser Etching Technique
, 2009 We have produced thick-foil and fine-pitch gas electron multipliers (GEMs) using a laser etching technique. To improve production yield we have employed a new material, Liquid Crystal Polymer, instead of polyimide as an insulator layer.
A. Harayama +29 more
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GEM operation in helium and neon at low temperatures [PDF]
, 2005 We study the performance of Gas Electron Multipliers (GEMs) in gaseous He, Ne and Ne+H2 at temperatures in the range of 2.6-293 K. In He, at temperatures between 62 and 293 K, the triple-GEM structures often operate at rather high gains, exceeding 1000 ...
A. Bondar +33 more
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