Results 111 to 120 of about 2,614 (206)

Sub-20nm gaps in HSQ for ultra-scaled nanoelectronic devices

open access: yes
We build sub-20 nm gaps in hydrogen silsesquioxane (HSQ) by electron beam lithography, to enable nano-template structures for selective epitaxial growth of Ge or III-V semiconductors for ultra-scaled electronic applications [1].
Rupakula, Maneesha   +1 more
core  

Hydrogen silsesquioxane (HSQ) for use in nano imprint lithography

open access: yes, 2012
Innovations are being researched, using materials science, in the areas of sub- 100nm feature production. Current methods such as electron beam lithography (EBL), Extreme Ultra-Violet Lithography (EUV), and Nano-imprint lithography (NIL) are currently ...
Clark, Nathaniel
core  

Further insights into the mechanism of hydrogen-plasma surface passivation of low-dielectric constant hydrogen silsesquioxane (HSQ)

open access: yes, 2006
Hydrogen-plasma-induced surface modification of spin-on hydrogen silsesquioxane (HSQ) thin films has been studied with a view to understand the various physical and chemical aspects of the process. An extensive characterization of the chemical structure,
BOCK, W   +3 more
core  

Transfer, integration, and inverse design of metasurfaces in suspended membranes. [PDF]

open access: yesMoore More
Deng N   +7 more
europepmc   +1 more source

High Contrast 50kV E-Beam Lithography for HSQ atop Diamond using ESPACER for Spin-On Charge Dissipation

open access: yes, 2016
A high contrast HSQ process atop diamond is presented. A water soluable spin-on conductive layer called ESPACER is used as a charge dissipation layer in lieu of a metal thin ...
Lopez, Gerald G.   +2 more
core  

Adapting a Behavioral Intervention for Caregivers of Children with Down Syndrome or Fragile X Syndrome: A Pilot Study of RUBI-DD. [PDF]

open access: yesBehav Sci (Basel)
Blackburn AD   +8 more
europepmc   +1 more source

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