Results 121 to 130 of about 1,630 (175)

A Review on the Research Progress of Imprint Film Materials for Nanoimprint Lithography. [PDF]

Micromachines (Basel)
Yang Z, Ma R, Yao C, Song J, Li J, Cui G, Li H, Cao Y, Ma D.   +8 more
europepmc   +1 more source

Multimodal Phenotyping Dataset of Driving Fatigue. [PDF]

Sci Data
Li J, Fu C, Tang J, Zhou L, Chen H, Zhou W, Chen C, Luo J.   +7 more
europepmc   +1 more source

Effects of a Personalized Fitness Program Provided by Undergraduate Exercise Science Students on Attitudes Toward Exercise, Mental Health, and Quality of Life. [PDF]

Int J Exerc Sci
Cleveland K, Fike J, Peterson S.
europepmc   +1 more source

Understanding the mechanism of base development of HSQ

, 2009
openaire   +1 more source

Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems. [PDF]

Polymers (Basel)
Wen Z, Liu X, Chen W, Zhou R, Wu H, Xia Y, Wu L.   +6 more
europepmc   +1 more source

Resist for electronic lithography: Tests on HSQ Em Resist powder

Harmel, Justine, Noé, Laure, Pinaud, Sébastien, Mazenq, Laurent, Carcenac, Franck, Capello, Christophe, Tan, Reasmey, Respaud, Marc   +7 more
openaire   +1 more source

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Gap-fill type HSQ/ZEP520A bilayer resist process-(IV): HSQ-rod and HSQ-tip hardening processes

Proceedings of SPIE, 2010
HSQ island formed by directly e-beam exposure (DE) and wet development is used as a dry etching mask material. However, the HSQ islands with high aspect ratio are susceptible to collapse during wet development process due to surface tension. To improve this, HSQ-rod and HSQ-Tip structures were achieved by dry stripping of ZEP520A after thermal ...
Ming-Jinn Tsai, Wei-Su Chen
exaly   +2 more sources

Planarization properties of hydrogen silsesquioxane (HSQ) influence on CMP

Microelectronic Engineering, 2000
Abstract Low dielectric constant materials are now required as intermetallic dielectrics to reduce RC delay in advanced technologies. Hydrogen silsesquioxane (HSQ) is a spin-on dielectric with a dielectric constant around 3. Local planarization of HSQ and its impact on the global planarization due to CMP process was studied.
C Maddalon, K Barla, E Denis, E Lous, E Perrin, S Lis, C Lair, E Dehan   +7 more
exaly   +2 more sources

HSQ hybrid lithography for 20 nm CMOS devices development

Microelectronic Engineering, 2002
This paper reports the lithographic development on 8 in. silicon wafers for 20 nm CMOS devices using a hydrogen silsesquioxane (HSQ) hybrid lithography process. The method relies on splitting the pattern into high-resolution and low-resolution components at the same level.
J Foucher, S Tedesco, B Dal'Zotto
exaly   +3 more sources