Results 141 to 150 of about 1,630 (175)

Direct stamp fabrication for NIL and hot embossing using HSQ

Microelectronic Engineering, 2007
Commonly stamps or masters for nanoimprinting are made by electron beam lithography (EBL) and subsequent reactive ion etching into silicon. Here we present a single step procedure to prepare stamps suitable for nanoimprinting and hot embossing. The stamps are directly fabricated in HSQ (hydrogen silsequioxane), a negative EBL resist, which has a high ...
N. Gadegaard, D. McCloy
openaire   +1 more source

Integration of HSQ in the direct-on-metal approach for 0.25-μm technology

Microelectronic Engineering, 2000
The spin-on low-k material coated directly on the metal lines, which is called the direct-on-metal (DOM) approach, has been investigated with respect to issues about the intraline capacitance, the intraline leakage current, metal corrosion, unlanded vias, and electromigration lifetime.
T Gao, A Witvrouw, B Coenegrachts, C Bruynseraede, M Van Hove, K Maex   +5 more
openaire   +1 more source

Nanometer-Scale Fabrication of Hydrogen Silsesquioxane (HSQ) Films with Post Exposure Baking

Journal of Nanoscience and Nanotechnology, 2013
A nanometer-scale grating structure with a 60-nm-wide gap and 200-nm-wide ridge has been successfully demonstrated on a silicon-on-insulator substrate by using a 220-nm-thick hydrogen silsesquioxane (HSQ) negative tone electron beam resist. A post exposure baking (PEB) process and hot development process with low concentration (3.5 wt%) of ...
Dong-Hyun, Kim, Se-Koo, Kang, Geun-Young, Yeom, Jae-Hyung, Jang   +3 more
openaire   +2 more sources

Resist thickness effects on ultra thin HSQ patterning capabilities

Microelectronic Engineering, 2009
This work focuses on the effect of resist thickness on resolution performance of hydrogen silsesquioxane (HSQ) electron beam resist. Contrast, sensitivity, surface morphology and resolution of the formed structures were found to be substantially dependent on film thickness.
V. Sidorkin, A. Grigorescu, H. Salemink, E. van der Drift   +3 more
openaire   +1 more source

Helium ion beam lithography of thick HSQ resists

2012
In this work we study the resist thickness dependence of SHIBL in negative tone (HSQ) resist. The ion beam used is a 30 keV focused He+ beam of an OrionPlus helium ion microscope. The structures made are dots, single and multiple lines, and squares. The resist thickness is varied between 4 and 162 nm. The substrate is silicon.
Alkemade, P.F.A., Langen-Suurling, A.K. van, Drift, E. van der, Veldhoven, E. van, Maas, D.J.   +4 more
openaire   +1 more source

HSQ – Health Status Questionnaire

2023
openaire   +1 more source

Headache Screening Questionnaire (HSQ)

FysioPraxis, 2018
van der Meer, H., Visscher, C., Engelbert, R., Mulleners, W., Nijkuis-van der Sanden, M., Speksnijder, C.   +5 more
  +7 more sources

HSQ

2014
openaire   +2 more sources

Nanoimprint lithography using hydrogen silsequioxane(HSQ) mold

Digest of Papers. 2004 International Microprocesses and Nanotechnology Conference, 2004., 2004
M. Kawamori, K. Nakamatsu, K. Tone, T. Katase, H. Namatsu, S. Matsui   +5 more
openaire   +1 more source

Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damage

Thin Solid Films, 2001
S M Sze, T M Tsai, C W Chen
exaly