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Progress in Polyhedral Oligomeric Silsesquioxane (POSS) Photoresists: A Comprehensive Review across Lithographic Systems. [PDF]
Polymers (Basel)Wen Z +6 more
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Resist for electronic lithography: Tests on HSQ Em Resist powder
Harmel, Justine +7 more
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Gap-fill type HSQ/ZEP520A bilayer resist process-(IV): HSQ-rod and HSQ-tip hardening processes
Proceedings of SPIE, 2010HSQ island formed by directly e-beam exposure (DE) and wet development is used as a dry etching mask material. However, the HSQ islands with high aspect ratio are susceptible to collapse during wet development process due to surface tension. To improve this, HSQ-rod and HSQ-Tip structures were achieved by dry stripping of ZEP520A after thermal ...
Wei-Su Chen, Ming-Jinn Tsai
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Sub-10nm resolution after lift-off using HSQ/PMMA double layer resist
Microelectronic Engineering, 2013 Hydrogen silesquioxan (HSQ) is a well-investigated negative tone inorganic resist [1,2] which is known for its capabilities for high resolution electron beam lithography (EBL) and its stability against dry etching [3].
Marcus Rommel +2 more
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Influence of temperature on HSQ electron-beam lithography
Journal of Vacuum Science & Technology B, 2007The authors present a study of the influence of temperature on hydrogen silsesquioxane (HSQ) e-beam lithography during drying, developing, and postdevelopment baking. In accordance with the observation that tempering at relatively low temperatures can already lead to noticeable cross-linking, comparable to the effect of e-beam exposure, the authors ...
Monika Fleischer +2 more
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Supercritical drying process for high aspect-ratio HSQ nano-structures
Microelectronic Engineering, 2006 Supercritical resist drying allows the fabrication of high aspect-ratio (AR) resist patterns. The potential of this drying technique to increase the maximum achievable AR and the resolution of the overall lithographic process is analyzed for hydrogen ...
T Wahlbrink +2 more
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Study of process of HSQ in electron beam lithography
2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, 2010As a kind of inorganic negative-tone resist in electron beam lithography, hydrogen silsesquioxane(HSQ) has a high pattern resolution of about 5 nm, but the poor sensitivity limits its extensive application in the field of micro-fabrication. It's very difficult to fabricate the high aspect-ratio dense resist pattern for HSQ because of backscattering ...
Min Zhao +4 more
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HSQ resist for replication stamp in polymers
SPIE Proceedings, 2012We investigated an affordable, accurate and large scale production method to fabricate sub-wavelength grating structures by replication in polycarbonate substrates by hot embossing. We used hydrogen silsesquioxane (HSQ) a high resolution, binary, inorganic, negative electron beam resist, on silicon substrate to make a stamp for replication.
Saleem, M.R. +6 more
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Gap-fill type HSQ/ZEP520A bilayer resist process-(II): HSQ island and spacer formation
SPIE Proceedings, 2008Hydrogen silsesquioxane (HSQ) bilayer resist (BLR) processes are attractive to obtain nano-sized features with high aspect ratio by dry-transferring thin e-beam pattern to thick underlayer to strengthen the etch resistance. However, there are drawbacks of high e-beam dosage for HSQ patterning and difficulty in controlling the underlayer resist profile
Wei-Su Chen +3 more
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