Results 181 to 190 of about 2,614 (206)

Nanometer-Scale Fabrication of Hydrogen Silsesquioxane (HSQ) Films with Post Exposure Baking

Journal of Nanoscience and Nanotechnology, 2013
A nanometer-scale grating structure with a 60-nm-wide gap and 200-nm-wide ridge has been successfully demonstrated on a silicon-on-insulator substrate by using a 220-nm-thick hydrogen silsesquioxane (HSQ) negative tone electron beam resist. A post exposure baking (PEB) process and hot development process with low concentration (3.5 wt%) of ...
Dong-Hyun, Kim, Se-Koo, Kang, Geun-Young, Yeom, Jae-Hyung, Jang   +3 more
openaire   +2 more sources

Silicon-oxide resistive switching memory based on the HSQ layer

Solid-State Electronics
Piotr Wisniewski, Andrzej Mazurak, M Filipiak   +2 more
exaly   +2 more sources

Three dimensional HSQ structures formed using multiple low energy electron beam lithography [PDF]

Microelectronic Engineering, 2006
A method is presented for the fabrication of three-dimensional (3D) structures formed in Hydrogen Silsequioxane (HSQ) by a process of multiple low energy electron beam exposures with a single development step.
Richard J Blaikie
exaly   +1 more source

Study of negative electron beam nanoresist HSQ on GaAs substrate

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016
The aim of this paper is to characterize Hydrogen Silsesquioxane (HSQ) inorganic negative electron resist on GaAs substrate at 40 keV electron energy. The influence of process parameters on resist profiles was investigated with the aim of obtaining vertical sidewalls.
R. Andok, A. Bencurova, I. Kostic, A. Ritomsky, J. Skriniarova, K. Vutova   +5 more
openaire   +1 more source

Resist thickness effects on ultra thin HSQ patterning capabilities

Microelectronic Engineering, 2009
This work focuses on the effect of resist thickness on resolution performance of hydrogen silsesquioxane (HSQ) electron beam resist. Contrast, sensitivity, surface morphology and resolution of the formed structures were found to be substantially dependent on film thickness.
V. Sidorkin, A. Grigorescu, H. Salemink, E. van der Drift   +3 more
openaire   +1 more source

Effects of post-treatment for low-dielectric hydrogen silsesquioxane (HSQ)

SPIE Proceedings, 1998
Low density materials, such as hydrogen silsesquioxane (HSQ), can offer lower dielectric constants. With HSQ, a low value of K can be achieved if the density of Si-H bonding is maintained at a high level. However, the quality of HSQ films are degraded by the damage of oxygen plasma and hygroscopic behavior during photoresist stripping. In addition, the
Ting-Chang Chang, P. T. Liu, M. F. Chou, Ming-Shih Tsai, Simon M. Sze, Chun-Yen Chang, F. Y. Shih, H. D. Huang   +7 more
openaire   +1 more source

Room Temperature Nanoimprint Technology Using Hydrogen Silsequioxane (HSQ)

Japanese Journal of Applied Physics, 2002
Room-temperature nanoimprint lithography (RT-NIL) technology has been developed to overcome critical dimensions and pattern placement error due to thermal expansion in the conventional nanoimprint lithography (NIL) process. We propose RT-NIL using hydrogen silsequioxane (HSQ) instead of PMMA used in conventional NIL, and demonstrate HSQ replicated ...
Yutaka Igaku, Shinji Matsui, Hiroyuki Ishigaki, Jun-ichi Fujita, Masahiko Ishida, Yukinori Ochiai, Hideo Namatsu, Masanori Komuro, Hiroshi Hiroshima   +8 more
openaire   +1 more source

Helium ion beam lithography of thick HSQ resists

2012
In this work we study the resist thickness dependence of SHIBL in negative tone (HSQ) resist. The ion beam used is a 30 keV focused He+ beam of an OrionPlus helium ion microscope. The structures made are dots, single and multiple lines, and squares. The resist thickness is varied between 4 and 162 nm. The substrate is silicon.
Alkemade, P.F.A., Langen-Suurling, A.K. van, Drift, E. van der, Veldhoven, E. van, Maas, D.J.   +4 more
openaire   +1 more source

HSQ – Health Status Questionnaire

2023
openaire   +1 more source

Headache Screening Questionnaire (HSQ)

FysioPraxis, 2018
van der Meer, H., Visscher, C., Engelbert, R., Mulleners, W., Nijkuis-van der Sanden, M., Speksnijder, C.   +5 more
  +7 more sources