Results 171 to 180 of about 2,614 (206)

The Effect of Temperature on the Development of a Contrast HSQ Electronic Resist

Russian Microelectronics, 2020
A study was made of the dependence of the contrast value of a negative electron resist based on hydrogen-silsesquioxane (HSQ) in the process of the development of NaOH–NaCl in an aqueous alkaline-salt solution at various temperatures. When the temperature of the developer rises from 22 to 40°C the contrast increases by 45%.
A. A. Tatarintsev, A. V. Shishlyannikov, K. V. Rudenko, A. E. Rogozhin, A. E. Ieshkin   +4 more
openaire   +1 more source

Planarization properties of hydrogen silsesquioxane (HSQ) influence on CMP

Microelectronic Engineering, 2000
Abstract Low dielectric constant materials are now required as intermetallic dielectrics to reduce RC delay in advanced technologies. Hydrogen silsesquioxane (HSQ) is a spin-on dielectric with a dielectric constant around 3. Local planarization of HSQ and its impact on the global planarization due to CMP process was studied.
C Maddalon, K Barla, E Denis, E Lous, E Perrin, S Lis, C Lair, E Dehan   +7 more
exaly   +2 more sources

Analysis of property of HSQ in electron beam lithography

SPIE Proceedings, 2007
Hydrogen silsesquioxane (HSQ) is a kind of inorganic negative-tone resist for electron beam lithography with high pattern resolution of about 5 nm. It is a kind of promising resist used in fabrication of nanostructures such as transmission grating (TG), dots array, and chiral structures. But the poor sensitivity limits the extensive application of HSQ.
Min Zhao, XiaoLi Zhu, Baoqin Chen, Jiebin Niu, Ming Liu, Changqing Xie   +5 more
openaire   +1 more source

Resistance Switching in Individual Hydrogen Silsesquioxane (HSQ) Nanopillars

ECS Meeting Abstracts, 2016
We demonstrate resistance switching in individual 100nm-diameter hydrogen silsesquioxane (HSQ) nanopillars. HSQ is commonly used as an insulating material and an electron beam resist in the electronics industry, as it forms silicon oxide upon exposure to an electron beam. In this paper, we present our recent work on resistance switching in HSQ.
Wing Hung Ng, Mark Buckwell, Adnan Mehonic, Anthony Joseph Kenyon   +3 more
openaire   +1 more source

HSQ hybrid lithography for 20 nm CMOS devices development

Microelectronic Engineering, 2002
This paper reports the lithographic development on 8 in. silicon wafers for 20 nm CMOS devices using a hydrogen silsesquioxane (HSQ) hybrid lithography process. The method relies on splitting the pattern into high-resolution and low-resolution components at the same level.
G Cunge, S Tedesco, B Dal'Zotto
exaly   +3 more sources

Dual-wavelength method for measuring the thickness of HSQ photoresist

SPIE Proceedings, 2016
The reflectivity of thin film changes periodically with the increase of its thickness. According to this effect, we present a dual-wavelength method for measuring the thickness of HSQ film. At first, the refractive index of HSQ was measured by a spectroscopic ellipsometer.
Shun Yao, Bo Yu, Jingcheng Jin, Chun Li
openaire   +1 more source

Potential of Cat-CVD deposited a-SiC:H as diffusion barrier layer on low-k HSQ films for ULSI

Thin Solid Films, 2006
Cu diffusion in the spin-on hydrogen silsesquioxane (HSQ) is a major obstacle in the low-k plus Cu technology for future ULSI devices. We have optimized the process conditions for the spin-on HSQ low-k films. Subsequent metallization with Al and Cu shows
KUMBHAR, AA, SINGH, SK, DUSANE, RO, KOTHARI, M   +3 more
exaly   +2 more sources

Enhancing the electron beam sensitivity of hydrogen silsesquioxane (HSQ)

SPIE Proceedings, 2004
The electron beam sensitivity of hydrogen silsesquioxane (HSQ) has been enhanced by including sensitizers that decompose to generate nucleophiles which catalyze the conversion of the silicon hydride (Si-H) moieties in HSQ into the insoluble siloxane (Si-O-Si) network.
Augustin Jeyakumar, Clifford L. Henderson   +1 more
openaire   +1 more source

Direct stamp fabrication for NIL and hot embossing using HSQ

Microelectronic Engineering, 2007
Commonly stamps or masters for nanoimprinting are made by electron beam lithography (EBL) and subsequent reactive ion etching into silicon. Here we present a single step procedure to prepare stamps suitable for nanoimprinting and hot embossing. The stamps are directly fabricated in HSQ (hydrogen silsequioxane), a negative EBL resist, which has a high ...
N. Gadegaard, D. McCloy
openaire   +1 more source

Integration of HSQ in the direct-on-metal approach for 0.25-μm technology

Microelectronic Engineering, 2000
The spin-on low-k material coated directly on the metal lines, which is called the direct-on-metal (DOM) approach, has been investigated with respect to issues about the intraline capacitance, the intraline leakage current, metal corrosion, unlanded vias, and electromigration lifetime.
T Gao, A Witvrouw, B Coenegrachts, C Bruynseraede, M Van Hove, K Maex   +5 more
openaire   +1 more source