Results 131 to 140 of about 1,630 (175)

Study of process of HSQ in electron beam lithography

2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, 2010
As a kind of inorganic negative-tone resist in electron beam lithography, hydrogen silsesquioxane(HSQ) has a high pattern resolution of about 5 nm, but the poor sensitivity limits its extensive application in the field of micro-fabrication. It's very difficult to fabricate the high aspect-ratio dense resist pattern for HSQ because of backscattering ...
Min Zhao, Baoqin Chen, Changqing Xie, Ming Liu, Jiebing Nie   +4 more
openaire   +1 more source

HSQ resist for replication stamp in polymers

SPIE Proceedings, 2012
We investigated an affordable, accurate and large scale production method to fabricate sub-wavelength grating structures by replication in polycarbonate substrates by hot embossing. We used hydrogen silsesquioxane (HSQ) a high resolution, binary, inorganic, negative electron beam resist, on silicon substrate to make a stamp for replication.
Saleem, M.R., Stenberg, P.A., Khan, M.B., Khan, Z.M., Honkanen, S., Turunen, J.   +6 more
openaire   +3 more sources

Gap-fill type HSQ/ZEP520A bilayer resist process-(II): HSQ island and spacer formation

SPIE Proceedings, 2008
Hydrogen silsesquioxane (HSQ) bilayer resist (BLR) processes are attractive to obtain nano-sized features with high aspect ratio by dry-transferring thin e-beam pattern to thick underlayer to strengthen the etch resistance. However, there are drawbacks of high e-beam dosage for HSQ patterning and difficulty in controlling the underlayer resist profile
Wei-Su Chen, Pei-Yi Gu, Ming-Jer Kao, Ming-Jinn Tsai   +3 more
openaire   +1 more source

Influence of temperature on HSQ electron-beam lithography

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2007
The authors present a study of the influence of temperature on hydrogen silsesquioxane (HSQ) e-beam lithography during drying, developing, and postdevelopment baking. In accordance with the observation that tempering at relatively low temperatures can already lead to noticeable cross-linking, comparable to the effect of e-beam exposure, the authors ...
M. Häffner, A. Haug, A. Heeren, M. Fleischer, H. Peisert, T. Chassé, D. P. Kern   +6 more
openaire   +1 more source

The Effect of Temperature on the Development of a Contrast HSQ Electronic Resist

Russian Microelectronics, 2020
A study was made of the dependence of the contrast value of a negative electron resist based on hydrogen-silsesquioxane (HSQ) in the process of the development of NaOH–NaCl in an aqueous alkaline-salt solution at various temperatures. When the temperature of the developer rises from 22 to 40°C the contrast increases by 45%.
A. A. Tatarintsev, A. V. Shishlyannikov, K. V. Rudenko, A. E. Rogozhin, A. E. Ieshkin   +4 more
openaire   +1 more source

Analysis of property of HSQ in electron beam lithography

SPIE Proceedings, 2007
Hydrogen silsesquioxane (HSQ) is a kind of inorganic negative-tone resist for electron beam lithography with high pattern resolution of about 5 nm. It is a kind of promising resist used in fabrication of nanostructures such as transmission grating (TG), dots array, and chiral structures. But the poor sensitivity limits the extensive application of HSQ.
Min Zhao, XiaoLi Zhu, Baoqin Chen, Jiebin Niu, Ming Liu, Changqing Xie   +5 more
openaire   +1 more source

Resistance Switching in Individual Hydrogen Silsesquioxane (HSQ) Nanopillars

ECS Meeting Abstracts, 2016
We demonstrate resistance switching in individual 100nm-diameter hydrogen silsesquioxane (HSQ) nanopillars. HSQ is commonly used as an insulating material and an electron beam resist in the electronics industry, as it forms silicon oxide upon exposure to an electron beam. In this paper, we present our recent work on resistance switching in HSQ.
Wing Hung Ng, Mark Buckwell, Adnan Mehonic, Anthony Joseph Kenyon   +3 more
openaire   +1 more source

Dual-wavelength method for measuring the thickness of HSQ photoresist

SPIE Proceedings, 2016
The reflectivity of thin film changes periodically with the increase of its thickness. According to this effect, we present a dual-wavelength method for measuring the thickness of HSQ film. At first, the refractive index of HSQ was measured by a spectroscopic ellipsometer.
Shun Yao, Bo Yu, Jingcheng Jin, Chun Li
openaire   +1 more source

Enhancing the electron beam sensitivity of hydrogen silsesquioxane (HSQ)

SPIE Proceedings, 2004
The electron beam sensitivity of hydrogen silsesquioxane (HSQ) has been enhanced by including sensitizers that decompose to generate nucleophiles which catalyze the conversion of the silicon hydride (Si-H) moieties in HSQ into the insoluble siloxane (Si-O-Si) network.
Augustin Jeyakumar, Clifford L. Henderson   +1 more
openaire   +1 more source

Processing, Properties, and CMP Characteristics of a Spin-on Polymer: HSQ

MRS Proceedings, 2000
AbstractThe structures and properties of the HSQ film during the cage/network transformation were studied by curing at 300°C for 1 hour. The experimental results show that the ratio of the network/cage structure of the cured HSQ film increases from 0.21 to 0.39 by curing.
Wei-Jung Lin, Chang-Jong Yang, Wen-Chang Chen   +2 more
openaire   +1 more source