Results 51 to 60 of about 2,524,701 (240)
Energetic Offset in Organic Solar Cells‐ Importance, Confusion and Outlook
Energetic offsets in organic solar cells (OSCs) remain a subject of debate due to measurement‐ and lab‐dependent discrepancies. This Perspective clarifies the physical origins of these variations and identifies temperature‐dependent electro‐optical methods as a reliable approach to obtain consistent offset values.
Nakul Jain +5 more
wiley +1 more source
Considering the voltage source characteristics of the converters in the flexible DC grid, the current-limiting reactors are usually placed on the DC line terminals to limit the fault current rising speed.
Yingqing Ma +5 more
doaj +1 more source
A Nb‐proximitized Josephson junction based on a WTe2/α‐Fe2O3 heterostructure exhibits a robust superconducting diode effect with programmable polarity. The diode direction can be trained by magnetic fields and switched by temperature cycling, revealing tunable finite‐momentum pairing states and competing superconducting states in symmetry‐broken ...
Enze Zhang +9 more
wiley +1 more source
Experimental Modeling of Forward Recovery Characteristics of IGBT for DC Circuit Breaker
DC circuit breaker is the main means to clear the faults in VSC-HVDC power grid. Before action of the hybrid DC circuit breaker, the IGBT in the transfer branch is in a state of zero voltage and zero current.
Hong SHEN +4 more
doaj +1 more source
A Universal van der Waals Tunneling Injector for Monolayer CMOS
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho +17 more
wiley +1 more source
A multiport superconducting fault‐current‐limiting circuit breaker for a flexible DC power grid
The fault current of the high‐voltage and large‐capacity flexible DC power grid has the characteristics of a fast rising rate, high peak value, and large influence area; therefore, fault current suppression equipment suitable for the flexible DC power ...
Weiru Wang +4 more
doaj +1 more source
Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo +5 more
wiley +1 more source
Interfacial charge transfer and low‐resistance interphase formation between PEO‐based polymer and Li10GeP2S12 solid electrolytes are investigated using multi‐electrode impedance spectroscopy and advanced analytical techniques such as XPS and ToF‐SIMS.
Ujjawal Sigar +6 more
wiley +1 more source
The use of advanced switching technologies, including hybrid and fully semiconductor-based circuit breakers, enables a significant reduction in the prospective short-circuit current. This enhances the level of circuit protection by minimizing thermal and
Łukasz Nowak +2 more
doaj +1 more source
Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley +1 more source

