Results 161 to 170 of about 36,186 (209)
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TAC-IGBT: An improved IGBT structure
2009 21st International Symposium on Power Semiconductor Devices & IC's, 2009An improved Trench Insulated Gate Bipolar Transistors (TIGBT), called the Trench Accumulation Layer Controlled Insulated Gate Bipolar Transistor (TAC-IGBT) is proposed. In this new device, the P base of the Conventional TIGBT (CT-IGBT) is completely removed, an accumulation channel is incorporated.
null Zehong Li +2 more
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Igbt Parameter Extraction for the Hefner IGBT Model
Proceedings of the 41st International Universities Power Engineering Conference, 2006The insulated gate bipolar transistor (IGBT) is now widely used in many power electronics circuits. An accurate IGBT model is very important and useful to simulate these power electronics circuits to foresee the circuit behaviour and device behaviour before its implementation.
Ruchira Withanage +4 more
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IGBT modeling for analysis of complicated multi-IGBT Circuits
2009 2nd International Conference on Power Electronics and Intelligent Transportation System (PEITS), 2009A new IGBT (Insulated Gate Bipolar Transistor) model for simulation of complicated multi-IGBT circuits is presented. Based on the gate charge and discharge behaviors of IGBT, it piecewise models the turn-on and -off transient of IGBT, and simulates the static characteristics with curve fitting method.
null Deng Yi +2 more
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IEEE Transactions on Industrial Electronics, 1995
During the last few years, great progress in the development of new power semiconductor devices has been made. The new generation of power semiconductors is capable of conducting more current and blocking higher voltage. The IGBT (insulated gate bipolar transistor) is an outgrowth of power MOSFET technology. More like a MOSFET than a bipolar transistor
F. Mihalic +3 more
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During the last few years, great progress in the development of new power semiconductor devices has been made. The new generation of power semiconductors is capable of conducting more current and blocking higher voltage. The IGBT (insulated gate bipolar transistor) is an outgrowth of power MOSFET technology. More like a MOSFET than a bipolar transistor
F. Mihalic +3 more
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1200V Bidirectional FS-IGBT (BFS-IGBT) with Superior Turn-Off Capability
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021In this paper, we propose Bidirectional Field-Stop IGBT (BFS-IGBT) and demonstrate its very fast turn-off capability. BFS-IGBT is characterized by the same thin N-base thickness as that of FS-IGBTs, and thus, superior to conventional bidirectional IGBTs. The device characteristics can be widely tuned by controlling the Anode side gate bias. By applying
Masahiro Tanaka +2 more
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IEEE Industry Applications Magazine, 1998
Efforts to model the switching behavior of IGBTs have been greatly expanded. In many cases, circuit modeling has become an economic necessity because the cost of the components of a medium- to high-power circuit, and the load itself, is so high that all means available muse be used to lower the risk of system failure during both the prototyping phase ...
David W. Berning, Allen R. Hefner
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Efforts to model the switching behavior of IGBTs have been greatly expanded. In many cases, circuit modeling has become an economic necessity because the cost of the components of a medium- to high-power circuit, and the load itself, is so high that all means available muse be used to lower the risk of system failure during both the prototyping phase ...
David W. Berning, Allen R. Hefner
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2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT)
IEEE Transactions on Electron Devices, 1996A 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT) has been developed. This is the first work to demonstrate the possibility of a high-voltage, high-current, and highly reliable flat-packaged MOS controlled device. The 20-mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not ...
Y. Takahashi +3 more
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Low loss IGBT with Partially Narrow Mesa Structure (PNM-IGBT)
2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012A PNM (Partially Narrow Mesa) -IGBT with a fundamentally new surface is proposed for the first time. The unique gate shape looks like a “vase” and generates an extreme injection enhancement. Its performance approaches the limits of Si-IGBT. Therefore, PNM-IGBT is able to contribute to the saturation voltage reduction and the improvement of Vce(sat ...
Masakiyo Sumitomo +5 more
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IEE Colloquium Recent Advances in Power Devices, 1999
Some of the design considerations for the implementation of a bondless, pressure contacted IGBT are outlined. Whilst the electrical performance of each type of device is similar, some differences in the mechanical and thermal properties of pressure contacted devices to those exhibited by substrate mounted devices are highlighted.
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Some of the design considerations for the implementation of a bondless, pressure contacted IGBT are outlined. Whilst the electrical performance of each type of device is similar, some differences in the mechanical and thermal properties of pressure contacted devices to those exhibited by substrate mounted devices are highlighted.
openaire +1 more source