Results 171 to 180 of about 10,668 (228)

IGBT modeling for analysis of complicated multi-IGBT Circuits

2009 2nd International Conference on Power Electronics and Intelligent Transportation System (PEITS), 2009
A new IGBT (Insulated Gate Bipolar Transistor) model for simulation of complicated multi-IGBT circuits is presented. Based on the gate charge and discharge behaviors of IGBT, it piecewise models the turn-on and -off transient of IGBT, and simulates the static characteristics with curve fitting method.
null Deng Yi, null Zhao Zhengming, null Yuan Liqiang   +2 more
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Study on Electrothermal Characteristics of the Reverse-Conducting IGBT (RC-IGBT)

2020 21st International Conference on Electronic Packaging Technology (ICEPT), 2020
The reverse-conducting IGBT RC-IGBT is a new structure device, which integrates an IGBT chip and a fast recovery diode (FRD) chip on a single chip. Compared with traditional IGBT, the RC-IGBT has many advantages such as high power density, small size, high reliability and low cost. However, its complex structure and process, as well as snap-back effect
Yuan Chen, Peng Zhang, Xiaofeng Hu, Hong-Zhong Huang, Ping Lai, Zhiyuan He, Yiqiang Chen, Zhi wei Fu, Chang Liu   +8 more
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Surge current capability of IGBTs

International Multi-Conference on Systems, Sygnals & Devices, 2012
Commonly an IGBT cannot withstand a surge-current pulse (large overcurrent with a duration of some milliseconds) due to the current saturation characteristic of this device. In the case of a converter's single device failure the IGBT switches are driven into pulse-blocking mode to prevent a DC-link short-circuit and subsequent IGBT failures.
Thomas Basler, Josef Lutz, Roland Jakob, Thomas Bruckner   +3 more
openaire   +1 more source

Design of Current Sensors in IGBT's

50th Annual Device Research Conference, 1992
Summary form only given. The operation of current sensors (or pilots) in IGBTs (insulated-gate bipolar transistors) is described experimentally and with two-dimensional simulations. Two different sensor structures are compared. In the most conventional structure, a small IGBT, separated from the main device by metallization only, is used as a current ...
T.P. Chow, D.N. Pattanayak, E.J. Wildi, J.M. Pimbley, B.J. Baliga, M.S. Adler   +5 more
openaire   +1 more source

Extending the RET-IGBT (recessed emitter trench IGBT) concept to high voltages: Experimental demonstration of 3.3kV RET IGBT

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018
In this paper we show simulation and experimental results of new 3.3kV RET-IGBT (Recessed Emitter Trench IGBT). Simulation results show that although the RET concept reduces the active region's trench to trench mesa, it does not show the reported inversion layer modulation phenomenon in conventional "narrow mesa" devices, which can degrade performance ...
L. Ngwendson, I. Deviny, C. Zhu, I. Saddiqui, C. Kong, A. Islam, J. Hutchings, J. Thompson, M. Briggs, O. Basset, H. Luo, Y. Wang, Y. Yao   +12 more
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Low loss IGBT with Partially Narrow Mesa Structure (PNM-IGBT)

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012
A PNM (Partially Narrow Mesa) -IGBT with a fundamentally new surface is proposed for the first time. The unique gate shape looks like a “vase” and generates an extreme injection enhancement. Its performance approaches the limits of Si-IGBT. Therefore, PNM-IGBT is able to contribute to the saturation voltage reduction and the improvement of Vce(sat ...
Masakiyo Sumitomo, Junichi Asai, Hiroki Sakane, Kazuki Arakawa, Yasushi Higuchi, Masaki Matsui   +5 more
openaire   +1 more source

2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT)

IEEE Transactions on Electron Devices, 1996
A 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT) has been developed. This is the first work to demonstrate the possibility of a high-voltage, high-current, and highly reliable flat-packaged MOS controlled device. The 20-mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not ...
Y. Takahashi, T. Koga, H. Kirihata, Y. Seki   +3 more
openaire   +1 more source

The Bi-IGBT: a low losses power structure by IGBT parallel association

Semiconductor Science and Technology, 2008
A low losses IGBT structure, the Bi-IGBT, made up by the parallel association of a slow and a fast IGBT is presented in this work. The structure has been simulated using Saber® tools including the IGBT physical models and compared with experimental results.
C Caramel, R De Maglie, P Austin, J L Sanchez, J Le Gal, E Imbernon, J P Laur, D Flores, S Hidalgo, J Millan, J Rebollo   +10 more
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Modeling for IGBT

2006 IEEE International Conference on Industrial Technology, 2006
A mathematical model has been developed for an insulated gate bipolar transistor (IGBT) by compartmenting it into two diodes which are connected in series with reverse configuration. One diode is an ordinary diode while other is a controlled diode.
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Electrothermal characterization of IGBT

Proceedings of 1994 IEEE Industry Applications Society Annual Meeting, 2002
The improvement of the switch function, due to technological evolution, is still limited by the intrinsic characteristics of silicon. It is therefore crucial, for the design of power convertors, to develop an understanding of electrical and thermal behaviours of power components, in order to estimate their actual performances and to be able to choose a
S. Rael, C. Schaeffer, R. Perret
openaire   +1 more source