Results 161 to 170 of about 10,668 (228)
Impact of BMI on Organs at Risk Dose for Cervical Cancer Treated With Definitive Radiation Therapy Followed by Brachytherapy Boost. [PDF]
CureusTang J +6 more
europepmc +1 more source
Image guided brachytherapy quality assurance on NRG GY017 investigating immunotherapy in addition to chemoradiation for locally advanced cervical cancer. [PDF]
BrachytherapyKim H +22 more
europepmc +1 more source
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IEEE Electron Device Letters, 2010
In this letter, we propose a new device, the Semi-Superjunction (SJ) (Semi-SJ) insulated-gate bipolar transistor (IGBT) (Semi-SJ IGBT). The device offers significant improvement in the on state and switching tradeoff compared with the state-of-the-art FieldStop Trench IGBT (FS IGBT).
Marina Antoniou +2 more
exaly +2 more sources
In this letter, we propose a new device, the Semi-Superjunction (SJ) (Semi-SJ) insulated-gate bipolar transistor (IGBT) (Semi-SJ IGBT). The device offers significant improvement in the on state and switching tradeoff compared with the state-of-the-art FieldStop Trench IGBT (FS IGBT).
Marina Antoniou +2 more
exaly +2 more sources
A retrospective study of locally advanced cervical cancer cases treated with CT-based 3D-IGBT compared with 2D-IGBT [PDF]
Japanese Journal of Radiology, 2023 香川大学Kagawa University博士（医学）Purpose: To retrospectively review locally advanced cervical cancer (CC) cases treated with three-dimensional image-guided brachytherapy (3D-IGBT) and two-dimensional (2D)-IGBT.Materials and methods: Patients with Stage IB-IVa ...
Toshifumi Kinoshita +2 more
exaly +2 more sources
TAC-IGBT: An improved IGBT structure
2009 21st International Symposium on Power Semiconductor Devices & IC's, 2009An improved Trench Insulated Gate Bipolar Transistors (TIGBT), called the Trench Accumulation Layer Controlled Insulated Gate Bipolar Transistor (TAC-IGBT) is proposed. In this new device, the P base of the Conventional TIGBT (CT-IGBT) is completely removed, an accumulation channel is incorporated.
null Zehong Li +2 more
openaire +1 more source
IEEE Transactions on Industrial Electronics, 1995
During the last few years, great progress in the development of new power semiconductor devices has been made. The new generation of power semiconductors is capable of conducting more current and blocking higher voltage. The IGBT (insulated gate bipolar transistor) is an outgrowth of power MOSFET technology. More like a MOSFET than a bipolar transistor
Franc Mihalic +3 more
openaire +1 more source
During the last few years, great progress in the development of new power semiconductor devices has been made. The new generation of power semiconductors is capable of conducting more current and blocking higher voltage. The IGBT (insulated gate bipolar transistor) is an outgrowth of power MOSFET technology. More like a MOSFET than a bipolar transistor
Franc Mihalic +3 more
openaire +1 more source
600 V trench IGBT in comparison with planar IGBT-an evaluation of the limit of IGBT performance
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics, 2002We have developed a large area trench MOS process and experimentally manufactured a 600 V, 50 A class trench IGBT. By narrowing the trench pitch, the devices achieved a superior ON state voltage(V/sub CE/(sat)=1.4 V, t/sub f/=230 ns @ 200 A/cm/sup 2/) and much better endurance property (dI/sub c//dt/spl ap/2500 A/(s/spl middot/cm/sup 2/)) for latch-up ...
M. Harada +5 more
openaire +1 more source
Igbt Parameter Extraction for the Hefner IGBT Model
Proceedings of the 41st International Universities Power Engineering Conference, 2006The insulated gate bipolar transistor (IGBT) is now widely used in many power electronics circuits. An accurate IGBT model is very important and useful to simulate these power electronics circuits to foresee the circuit behaviour and device behaviour before its implementation.
Ruchira Withanage +4 more
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The 3rd generation IGBT toward a limitation of IGBT performance
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, 2002The performance of the third-generation IGBT (insulated-gate bipolar transistor) is described. It is demonstrated that a 600-V/100-A third-generation IGBT has an on-state voltage drop of about 1.7 V and a fall-time of about 150 ns during inductive-load turn-off, which is very close to the limit of IGBT performance predicted by numerical simulation. The
M. Otsuki +3 more
openaire +1 more source