Results 181 to 190 of about 10,668 (228)
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IEEE Transactions on Power Electronics, 2000
In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into different categories according to mathematical type, objectives, complexity, accuracy and speed. Features of the different models are listed.
null Kuang Sheng +2 more
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In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into different categories according to mathematical type, objectives, complexity, accuracy and speed. Features of the different models are listed.
null Kuang Sheng +2 more
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2017 IEEE Transportation Electrification Conference and Expo (ITEC), 2017
This paper investigates the feasibility of utilizing IGBTs under extreme operating conditions which exceed their datasheet current rating by a factor of 5–10. Various types of 1200V/100A rated IGBTs experimentally demonstrated a peak current conduction capability greater than 1000A, and an RBSOA of 1200V/800A.
null Yanjun Feng +4 more
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This paper investigates the feasibility of utilizing IGBTs under extreme operating conditions which exceed their datasheet current rating by a factor of 5–10. Various types of 1200V/100A rated IGBTs experimentally demonstrated a peak current conduction capability greater than 1000A, and an RBSOA of 1200V/800A.
null Yanjun Feng +4 more
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Superjunction IGBT Filling the Gap Between SJ MOSFET and Ultrafast IGBT
IEEE Electron Device Letters, 2012In this letter, we report Eoff-versus- Vce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dEoff/dVce >;0 in a transition region between purely unipolar and strongly bipolar device behaviors.
Friedhelm Bauer +4 more
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Application characteristics of an experimental RB-IGBT (reverse blocking IGBT) module
Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting., 2004This paper describes the characteristics of a new 1200 V, 100 A reverse blocking IGBT chip. It will be shown that this new chip exhibits symmetrical off-state blocking voltage and low losses making it a promising candidate for power conversion topologies such as matrix converters, current source inverters, and AC switches. A prototype module configured
E.R. Motto +5 more
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Resonance, 2013
This section features conversations with personalities related to science, highlighting the factors and circumstances that guided them in making the career choice to be a scientist.
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This section features conversations with personalities related to science, highlighting the factors and circumstances that guided them in making the career choice to be a scientist.
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2011
In the previous chapter, it has been demonstrated that the silicon carbide planar-shielded inversion-mode power MOSFET structure has excellent on-state resistance for devices with breakdown voltage of up to 10,000 V. However, the specific on-resistance for these devices becomes relatively large when their blocking voltage is scaled to 20,000 V ...
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In the previous chapter, it has been demonstrated that the silicon carbide planar-shielded inversion-mode power MOSFET structure has excellent on-state resistance for devices with breakdown voltage of up to 10,000 V. However, the specific on-resistance for these devices becomes relatively large when their blocking voltage is scaled to 20,000 V ...
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A Fast IGBT Junction Temperature Estimation Approach Based on ON-State Voltage Drop
IEEE Transactions on Industry Applications, 2021Yanyong Yang +2 more
exaly
Warping model of high-power IGBT modules subjected to reflow soldering process
International Journal of Mechanical Sciences, 2023Shang Gao, Renke Kang
exaly