Results 171 to 180 of about 36,186 (209)

Study on Electrothermal Characteristics of the Reverse-Conducting IGBT (RC-IGBT)

2020 21st International Conference on Electronic Packaging Technology (ICEPT), 2020
The reverse-conducting IGBT RC-IGBT is a new structure device, which integrates an IGBT chip and a fast recovery diode (FRD) chip on a single chip. Compared with traditional IGBT, the RC-IGBT has many advantages such as high power density, small size, high reliability and low cost. However, its complex structure and process, as well as snap-back effect
Yuan Chen, Peng Zhang, Xiaofeng Hu, Hong-Zhong Huang, Ping Lai, Zhiyuan He, Yiqiang Chen, Zhi wei Fu, Chang Liu   +8 more
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High-Voltage IGBT Switching Arrays

IEEE Transactions on Magnetics, 2008
Under a Navy SBIR, Diversified Technologies, Inc. (DTI) will design and demonstrate scalable solid state switches in support of future U.S. Navy needs related to power supplies and inverters. One switch approach being developed consists of a massive series-parallel array of high-voltage insulated gate bipolar transistors that are switched synchronously
David A. Fink, Richard Torti, Nicholas Reinhardt, Marcel P. J. Gaudreau, Frank Mansfield   +4 more
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The 3rd generation IGBT toward a limitation of IGBT performance

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, 2002
The performance of the third-generation IGBT (insulated-gate bipolar transistor) is described. It is demonstrated that a 600-V/100-A third-generation IGBT has an on-state voltage drop of about 1.7 V and a fall-time of about 150 ns during inductive-load turn-off, which is very close to the limit of IGBT performance predicted by numerical simulation. The
M. Otsuki, S. Momota, A. Nishiura, K. Sakurai   +3 more
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IGBT Fault Current Limiting Circuit

IEEE Industry Applications Magazine, 1995
Circuits are proposed which, by limiting the fault current magnitude, extends the short-circuit withstand time of high-efficiency (high-gain) IGBTs (insulated-gate bipolar transistors). Limiting of the fault current magnitude also results in reduced turn-off voltage transients, a desirable byproduct, especially for higher current modules. Moreover, the
R. Chokhawala, G. Castino
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600 V trench IGBT in comparison with planar IGBT-an evaluation of the limit of IGBT performance

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics, 2002
We have developed a large area trench MOS process and experimentally manufactured a 600 V, 50 A class trench IGBT. By narrowing the trench pitch, the devices achieved a superior ON state voltage(V/sub CE/(sat)=1.4 V, t/sub f/=230 ns @ 200 A/cm/sup 2/) and much better endurance property (dI/sub c//dt/spl ap/2500 A/(s/spl middot/cm/sup 2/)) for latch-up ...
M. Harada, T. Minato, H. Takahashi, H. Nishihara, K. Inoue, I. Takata   +5 more
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1200V class reverse blocking IGBT (RB-IGBT) for AC matrix converter

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's, 2004
This paper presents a novel 1200 V RB-IGBT for an AC matrix converter. The 1200 V RB-IGBT is made by a deep diffusion isolation process and thin wafer process technology. Our fabricated RB-IGBT achieved more than 1200 V reverse blocking capability and the same forward voltage drop Vce(sat) and turn-off energy loss Eoff characteristics as our previous ...
null Takahashi, null Kaneda, null Minato
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Extending the RET-IGBT (recessed emitter trench IGBT) concept to high voltages: Experimental demonstration of 3.3kV RET IGBT

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018
In this paper we show simulation and experimental results of new 3.3kV RET-IGBT (Recessed Emitter Trench IGBT). Simulation results show that although the RET concept reduces the active region's trench to trench mesa, it does not show the reported inversion layer modulation phenomenon in conventional "narrow mesa" devices, which can degrade performance ...
L. Ngwendson, I. Deviny, C. Zhu, I. Saddiqui, C. Kong, A. Islam, J. Hutchings, J. Thompson, M. Briggs, O. Basset, H. Luo, Y. Wang, Y. Yao   +12 more
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Superjunction IGBT Filling the Gap Between SJ MOSFET and Ultrafast IGBT

IEEE Electron Device Letters, 2012
In this letter, we report Eoff-versus- Vce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dEoff/dVce >;0 in a transition region between purely unipolar and strongly bipolar device behaviors.
Friedhelm Bauer, Iulian Nistor, Andrei Mihaila, Marina Antoniou, Florin Udrea   +4 more
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Silicon Carbide IGBT

2011
In the previous chapter, it has been demonstrated that the silicon carbide planar-shielded inversion-mode power MOSFET structure has excellent on-state resistance for devices with breakdown voltage of up to 10,000 V. However, the specific on-resistance for these devices becomes relatively large when their blocking voltage is scaled to 20,000 V ...
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Modeling for IGBT

2006 IEEE International Conference on Industrial Technology, 2006
A mathematical model has been developed for an insulated gate bipolar transistor (IGBT) by compartmenting it into two diodes which are connected in series with reverse configuration. One diode is an ordinary diode while other is a controlled diode.
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