Results 221 to 230 of about 12,622 (259)

IGBT transistor switching in a unique industrial application

Proceedings of 5th International Conference on Power Electronics and Variable-Speed Drives, 1994
The paper presents the design, implementation, active protection against fault conditions and test results of a drive circuit for IGBT based static switches. Careful focus is concentrated on developing a drive qualified for protecting the switch in fault conditions, for controlling switching times in PWM inverter applications, for minimising noise ...
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Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics

IEEE Transactions on Reliability, 2009
Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to thermal overstress tests using a transistor test board until device latch-up. The collector-emitter current, transistor case temperature, transient and steady state gate voltages, and ...
N. Patil, J. Celaya, D. Das, K. Goebel, M. Pecht   +4 more
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Silicon IGBT (Insulated Gate Bipolar Transistor)

2011
The silicon IGBT is arguably the most successful innovation in power semiconductor devices during the past three-decades. By using a combination of bipolar current flow controlled using an MOS-gate structure, the power gain was increased a million fold when compared with existing power bipolar junction transistors and power MOSFET structures with high ...
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Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs

IEEE Transactions on Semiconductor Manufacturing, 2020
Vertical PNP bipolar transistor test structures were fabricated and measured, attempting to electrically obtain information on carrier lifetime in the voltage-supporting base region of Insulated Gate Bipolar Transistors (IGBTs). Owing to the structural similarity, the test structures and functional IGBTs can be integrated on the same wafers, making it ...
Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-Ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto   +21 more
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The ETO-IGBT—A Dual-Concept of Thyristor and Transistor Power Devices

IEEE Transactions on Industry Applications, 2019
The performance of inverters strongly depends on the characteristics of the employed semiconductor devices. Bound to a trade-off between conduction- and switching-optimization, these devices require a decision for the optimal loss balance. In this work, a new medium-voltage semiconductor device consisting of both thyristor-based and transistor-based ...
Jakob Teichrib, Rik W. De Doncker
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Modeling and characterization of the IGBT electrothermal transistor for circuit applications

Proceedings of the 39th Midwest Symposium on Circuits and Systems, 2002
An analytical model for the power Insulated Gate Bipolar Transistor (IGBT) including electrothermal interactions is developed. In this model the device's temperature becomes an interactive variable during the simulation. The model has been implemented in the Saber circuit simulator.
A. Amimi, R. Bouchakour, T. Maurel, O. Oliaei   +3 more
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Identification of failure precursor parameters for Insulated Gate Bipolar Transistors (IGBTs)

2008 International Conference on Prognostics and Health Management, 2008
Insulated Gate Bipolar Transistors (IGBTs) are used in applications such as the switching of automobile and train traction motors, high voltage power supplies, and in aerospace applications such as switch mode power supplies (SMPS) to regulate DC voltage.
Nishad Patil, Diganta Das, Kai Goebel, Michael Pecht   +3 more
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High accuracy SPICE behavioral macromodeling of insulated gate bipolar transistor (IGBT)

APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition, 2002
This paper presents a new behavioral IGBT macromodel, that uses the enhanced capabilities of the nonlinear controlled sources implemented in modern SPICE like simulators. It describes the device's internal static equations directly with "in line equation" controlled sources and the nonlinear voltage dependent gate capacitances are piece-wise-linear ...
A. Maxim, D. Andreu, J. Boucher
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Vertical Bipolar Transistor Test Structure for Measuring Minority Carrier Lifetime in IGBTs

2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS), 2019
Vertical PNP bipolar transistor test structures were fabricated, which can be integrated on the same wafer with functional IGBTs. Common-base current gain was measured by applying zero voltage to the leaky back side junction, from which minority carrier lifetime in the base region was extracted.
K. Takeuchi, M. Fukui, T. Saraya, K. Itou, T. Takakura, S. Suzuki, Y. Numasawa, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, M. Tsukuda, A. Ogura, K. Tsutsui, H. Iwai, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto   +20 more
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HV pulse modulator with switch on HV IGBT transistor

2015
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Dolgov, A., Kildisheva, O.
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