Results 101 to 110 of about 6,740,763 (262)

Study of II-VI semiconductors nanostrures by atom probe tomography

, 2015
Les nanostructures de semiconducteurs II-VI ont de nombreuses applications en microélectronique, optoélectronique et photonique. Notamment, les boites quantiques II-V peuvent servir de source de photons uniques.
Benallali, Hammouda
core  

Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors. [PDF]

Sci Rep, 2020
Colegrove E, Albin DS, Moutinho HR, Amarasinghe M, Burst JM, Metzger WK.   +5 more
europepmc   +1 more source

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

Advanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam, Jihyun Kim, Soobeen Ji, In Soo Kim, Sejin Kim, Eungseon Yeon, Do Kyung Hwang, Iva Plutnarová, Zdeněk Sofer, Sang Min Won, Joohoon Kang   +10 more
wiley   +1 more source

Theoretical approach to the tunneling mechanoluminescence produced during cleavage of II-VI semiconductors

, 2004
421-428This paper describes the tunneling mechanoluminescence (ML) produced during fracture of II-VI semiconductors. The electric potential surrounding the charged dislocations bends, valence band and conduction band strongly and consequently, the ...
Singh, Anubha, Choudhary, Vibha, Gupta, R K, Chandra, V K, Chandra, B P   +4 more
core  

Recent Progress and Future Opportunities for Optical Manipulation in Halide Perovskite Photodetectors

Nanomaterials
Perovskite, as a promising class of photodetection material, demonstrates considerable potential in replacing conventional bulk light-detection materials such as silicon, III–V, or II–VI compound semiconductors and has been widely applied in various ...
Jiarui Zhang, Chi Ma
doaj   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Angular dependence of impurity scattering in II-VI compound semiconductors

, 2000
788-790The probability of scattering by ionized impurities has been calculated as a function of the scattering angle in n-type II-VI compound semiconductors like ZnO, ZnS, CdS, CdSe and CdTe at 77 K.
Mukhopadhyay, D, Mallick, P S
core  

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

The development of II-VI semiconductors for blue diode lasers

, 1996
Current injection lasers operating in the blue and blue-green spectral regions have recently been fabricated from II-VI semiconductors. In this paper, the current status of these devices is assessed and the materials developments leading to their ...
Prior, K.
core  

High‐Speed Photoresponse of CVD‐Grown Lateral TMD Heterostructures

Advanced Functional Materials, EarlyView.
Internal electric fields generated by p‐n junctions and asymmetric Schottky barriers enhance the photoresponse speed in CVD‐grown monolayer TMD lateral heterostructures. This results in a 1.5‐2 orders of magnitude reduction in rise and fall times for optimized device configurations compared to homogeneous single‐material devices, enabling bandwidths ...
Mario Martin, Axel Printschler, William Roberts, Jonas L. Hiller, Patrick Michel, Martin Eberle, Marco Hammer, Md Tarik Hossain, Andrey Turchanin, Marcus Scheele   +9 more
wiley   +1 more source