Results 121 to 130 of about 6,740,763 (262)

Thermoelectric properties and phase transitions of II-VI semiconductors at high pressure [PDF]

, 2007
The high-pressure phase transitions in II -VI semiconductors (HgTe, HgSe, HgS, HgO, CdTe, CdSe, CdS, ZnTe, ZnSe, ZnS, ZnO) are analyzed in light of recent findings.
Vladimir V Shchennikov, Sergey V Ovsyannikov   +1 more
core  

Physics‐Grounded Materials Artificial Intelligence for Reliable Materials Discovery

Advanced Functional Materials, EarlyView.
Physics‐Grounded Materials AI (PhysMat AI) integrates physical priors, descriptors, constraints, verification, and data infrastructure into a unified full‐stack framework, enabling reliable, interpretable, and autonomous AI‐driven materials discovery.
Yuhang Wang, Qian Wang, Seong‐Hoon Jang, Hao Li   +3 more
wiley   +1 more source

Advances in Solution‐Processed Textile Triboelectric Nanogenerators: Ink Formation, Processing Strategies, Applications, and Challenges

Advanced Functional Materials, EarlyView.
Advanced ink systems for solution‐processed textile triboelectric nanogenerators are systematically summarized, spanning conductive, tribo‐negative, and tribo‐positive layers. By connecting ink chemistry, deposition methods, and device function, the present review reveals the key governing principles of solution development and highlights practical ...
Xinlong Sun, Stephen Beeby
wiley   +1 more source

Autonomous Multi‐Objective Nanoscale Characterization of Combinatorial (Al, Sc, B)N Films Reveals Composition‐Dependent Ferroelectric Regimes

Advanced Functional Materials, EarlyView.
Autonomous scanning probe microscopy and multi‐objective Bayesian optimization navigate a ternary (Al,Sc,B)N combinatorial library. Registered photoluminescence, electron‐probe compositional mapping, and X‐ray diffraction connect local electromechanical function to defect‐sensitive emission, composition, and crystal structure.
Yu Liu, Aditya Raghavan, Utkarsh Pratiush, Ian Mercer, Pochun Hsieh, Albert Suceava, Chih‐Yu Lee, Edgar Dimitrov, Mauricio Terrones, Ichiro Takeuchi, Venkatraman Gopalan, Jon‐Paul Maria, Sergei V. Kalinin   +12 more
wiley   +1 more source

Highly efficient carrier multiplication in inverted CdSe/HgSe quantum dots mediated by magnetic impurities

Nature Communications
Incorporating manganese (Mn) impurities into II-VI semiconductors alters their properties through strong exchange interactions with the host material.
Jungchul Noh, Clément Livache, Donghyo Hahm, Valerio Pinchetti, Ho Jin, Changjo Kim, Victor I. Klimov   +6 more
doaj   +1 more source

Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe. [PDF]

Sci Rep, 2017
Lin HF, Lau WM, Zhao J.
europepmc   +1 more source

Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors

Advanced Functional Materials, EarlyView.
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang, Mu‐Pai Lee, Jhen‐Dong Tsai, Liang‐Ying Hsieh, Jui‐Yuan Chen, Chun‐Wei Huang, Yen‐Fu Lin, Wen‐Wei Wu   +7 more
wiley   +1 more source

Rapid Microwave Plasma Engineering of HfO2/C@C Core‐Shell Fibrous Membrane Toward Flexible High‐Performance Electromagnetic Wave Absorption

Advanced Functional Materials, EarlyView.
Rapid microwave plasma torch engineering tunes crystal phases, carbon graphitization and oxygen‐vacancy defects in HfO2/C@C core‐shell fibrous membranes. Synergistic multi‐loss effects optimize impedance matching to deliver −65.75 dB reflection loss and a 7.37 GHz effective bandwidth for flexible electromagnetic wave absorption.
Qichao Ding, Limeng Song, Wei Li, Jiangtao Hao, Xuewen Jiang, Mengru Li, Xinglai Yuan, Gang Wang, Yanqiu Zhu, Mi Tian, Hailong Wang, Hongxia Li, Biao Zhao, Rui Zhang, Bingbing Fan   +14 more
wiley   +1 more source

Solid State Recrystallization of II-VI Semiconductors : Application to Cadmium Telluride, Cadmium Selenide and Zinc Selenide

, 1995
Solid state recrystallization (SSR) has been very rarely used for semiconductors. It has nevertheless been proposed, and industrially used, for the single crystal growth of cadmium mercury telluride according to a quench-anneal process.
Ndap, J., Zozime, A., J.O. Ndap, A. El Mokri, Triboulet, R., A. Zozime, R. Triboulet, A. Tromson Carli, El Mokri, A., Tromson Carli, A.   +9 more
core   +1 more source

Local detection of enhanced hot electron scattering in InSb/CdTe heterostructure interface

AIP Advances
The InSb/CdTe heterojunction material, characterized by low effective mass and high electron mobility, exhibits interfacial energy band bending, leading to the Rashba spin–orbit coupling effect and nonreciprocal transport, which make it suitable for the ...
Xiaoxiao Ma, Zhenghang Zhi, Weijie Deng, Tianxin Li, Qianchun Weng, Xufeng Kou, Wei Lu   +6 more
doaj   +1 more source