Results 91 to 100 of about 6,740,764 (263)

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source

Magnetic interactions in IV-VI diluted magnetic semiconductors

, 2023
Diluted magnetic semiconductors (DMS) are interesting because of the interplay between the electronic and magnetic subsystems. We describe selected magnetic properties of IV-VI diluted magnetic semiconductors, looking at the similarities and differences ...
Górska, M., Łusakowski, A., Kilański, Ł.   +2 more
core  

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

ZnO nanorod synthesis from Zn-based II-VI semiconductors

, 2006
In this paper, we report the synthesis of ZnO nanorods on in-situ grown ZnSe grains by using the simple chemical vapor deposition (CVD) method and elementary sources of Zn and Se.
Choy, WCH, Pang, KH, Leung, YP, Guo, CF
core   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Efficient near-IR Second Harmonic Generation in II-VI Semiconductors

, 2001
We have measured the absolute value of the second-order non-linear optical coefficient (d(41)) at lambda = 1.5 mum in the bulk wide-bandgap II VI semiconductors ZnTe, Cd0.8Zn0.2Te, and Cd0.78Mn0.22Te, by evaluating the second harmonic generation (SHG ...
A Mycielski, A Zappettini, S M Pietralunga, A Milani, M Martinelli   +4 more
core   +1 more source

ZnSe Light Emitting Diode Quantum Efficiency and Emission Characterization

MATEC Web of Conferences, 2016
ZnSe has demonstrated as a potential candidate in realizing advance LED in some appications for current and future works that utilize a cheaper preparation technique. Blue and white LEDs have been shown to spread across compound semiconductors.
Sahbudin U.K., Wahid M.H.A., Poopalan P., Hambali N.A.M.A., Shahimin M.M., Ariffin S.N., Saidi N.N.A., Ramli M.M.   +7 more
doaj   +1 more source

Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2

Advanced Functional Materials, EarlyView.
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko, Jungi Song, Minsu Kim, Yongwook Seok, Seongje Moon, Kenji Watanabe, Takashi Taniguchi, Kayoung Lee   +7 more
wiley   +1 more source

Study of II-VI semiconductors nanostrures by atom probe tomography

, 2015
Les nanostructures de semiconducteurs II-VI ont de nombreuses applications en microélectronique, optoélectronique et photonique. Notamment, les boites quantiques II-V peuvent servir de source de photons uniques.
Benallali, Hammouda
core  

Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors. [PDF]

Sci Rep, 2020
Colegrove E, Albin DS, Moutinho HR, Amarasinghe M, Burst JM, Metzger WK.   +5 more
europepmc   +1 more source