Results 111 to 120 of about 6,740,764 (263)
Bistability of Cation Interstitials in II-VI Semiconductors [PDF]
, 2005 The stability of cation interstitials in II-VI semiconductors is studied using ab initio methods. We find that interstitials in the neutral charge state are more stable in the tetrahedral interstitial site near the cation, whereas in the (2+) charge ...
Wei, S. H., Dalpian, G. M.
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Magneto-optic phenomena in II-VI diluted magnetic semiconductors: the Faraday and the Voigt effect
, 1992 Pronounced magneto-optic effects - Faraday rotation and Voigt birefringence - characterize the II-VI diluted magnetic semiconductors. The large sp-d exchange interaction and the antiferromagnetic coupling between the magnetic ions manifest themselves in ...
Oh, Eunsoon +2 more
core +1 more source
Deposition of Cadmium Sulphide Thin Films by Photochemical Deposition and Characterization [PDF]
Журнал нано- та електронної фізики, 2015 Deposition of cadmium sulphide (CdS) thin films on glass substrates in acidic medium by photochemical deposition (PCD) and studies by several characterizations are presented. The structural characterization of the thin films was carried out by XRD.
H.L. Pushpalatha, R. Ganesha
doaj
Pressure‐Assisted Dimensional Transformation of 2D Hydrogenated Borophene into 0D Boron Quantum Dots
Advanced Functional Materials, EarlyView.Hydrogenated borophene (HB) is transformed into distinct boron nanostructures through a solvent‐free thermal process. Under flowing nitrogen, hydrogen escape promotes reconstruction into B2O3 nanoplatelets, whereas hydrogen‐induced pressure under sealed conditions facilitates fragmentation into boron quantum dots.
Ozden Gunes Yildiz +11 more
wiley +1 more source
Nanocrystalline alloys of II-VI semiconductors from molecular multi-layer templates
, 1999 We present the synthesis and characterization of nanocrystalline II-VI semiconductors of mixed composition (CdSe/ZnSe, CdS) grown in fatty acid Langmuir-Schaefer multi-layer templates.
Cristofolini L, Facci P, Fontana MP
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Advanced Functional Materials, EarlyView.USe3 is introduced as an actinide van der Waals semiconductor that mirrors the quasi‐one‐dimensional physics of transition‐metal trichalcogenides. Polarization‐resolved Raman spectroscopy on exfoliated flakes maps strong in‐plane phonon anisotropy and strain‐tunable mode shifts.
Aljoscha Söll +17 more
wiley +1 more source
, 1993 For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic ...
Jain, Mu Kesh
core
Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity [PDF]
, 1976 The Schottky barrier for holes on common III-V and II-VI semiconductors contacted by Au is shown to depend only on the anion ...
McCaldin, J. O. +2 more
core
Advanced Functional Materials, EarlyView.Hafnium zirconium oxide thin films are grown using plasma‐enhanced atomic layer deposition with the addition of an atomic layer annealing (ALA) step. ALA leads to a change in the short‐range structure of the deposit and encourages formation of the ferroelectric Pca21 phase. The result is wake‐up‐free performance with films exposed to ALA.
Nicolas K. Lam +18 more
wiley +1 more source
Thermoelectric properties and phase transitions of II-VI semiconductors at high pressure [PDF]
, 2007 The high-pressure phase transitions in II -VI semiconductors (HgTe, HgSe, HgS, HgO, CdTe, CdSe, CdS, ZnTe, ZnSe, ZnS, ZnO) are analyzed in light of recent findings.
Vladimir V Shchennikov +1 more
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