Results 91 to 100 of about 13,433 (215)

Catalytically Enhanced Near Room‐Temperature Hydrogen Sensing Using Pd‐ZnO Colloidal Crystals

Advanced Functional Materials, EarlyView.
Pd‐decorated ZnO colloidal crystal monolayers demonstrate excellent performance across a wide hydrogen concentration range at 33°C, with high selectivity and reproducible device fabrication. The sensors show strong responses even at low‐ppm H2 concentrations and an ultra‐low detection limit of 82 ppb, indicating their suitability for diverse hydrogen ...
Hamidah Alluhaybi, Samuel J. Ippolito, Chung Kim Nguyen, Durairaj Mahendiran, Michelle J. S. Spencer, Edwin L. H. Mayes, Billy James Murdoch, Jason Choi, Shamali De Silva, James Tardio, Adrian Trinchi, Ahmad E. Kandjani, Mohammad Al Kobaisi, Ylias Sabri   +13 more
wiley   +1 more source

Dopant Distribution in Ga‐Implanted CdO—A Correlative Microscopy and Molecular Dynamics Study

Advanced Functional Materials, EarlyView.
This work demonstrates that ion implantation offset angle could modulate carrier concentration and mobility in cadmium oxide thin films. Combining correlative microscopy workflow and molecular dynamics simulations, this study reveals the control of interfacial cluster density with tailoring implantation angles, and the optimum offset angle that ...
Morvarid Ghorbani, Bhaveshkumar Kamaliya, Maxwell J. Tolchin, Ryan W. Spangler, Youngji Kim, Joshua D. Caldwell, Jon‐Paul Maria, Nabil D. Bassim   +7 more
wiley   +1 more source

Review of plasma etching processes for III-V semiconductorsMendeley Data

Micro and Nano Engineering
This paper provides a comprehensive literature review and analysis of III-V semiconductor plasma etching, highlighting key etching considerations and providing literature references to inform future process development. Plasma etching processes for III-V
Alison Clarke, Maxime Darnon, Karin Hinzer, Mathieu de Lafontaine   +3 more
doaj   +1 more source

Reconstructing Quantum Dot Surfaces via Dual‐Functional Ligand Pairing Enables Efficient Shortwave Infrared Optoelectronics

Advanced Functional Materials, EarlyView.
This work presents a ligand‐pairing strategy that reconstructs lead sulfide quantum dot surfaces for efficient short‐wave infrared optoelectronics. A low‐reactivity thiourea precursor combined with hydrobromic acid enables monodisperse and fully passivated quantum dots.
Dongeon Kim, Minjung Yang, Yunjin Lee, Gaeun Cho, Min‐Jae Si, Jaewoo Jeong, Seoryeon Jeong, Sol‐Hee Kim, Taeho Han, Seungin Jee, Byeong‐Chan Kim, Woong Kim, Seungmin Lee, Jun Hong Noh, Han Seul Kim, Yujin Jung, Se‐Woong Baek   +16 more
wiley   +1 more source

Polymer Substrates for Flexible Sensors: Advances and Contributions to Smart Agriculture

Advanced Functional Materials, EarlyView.
This review comprehensively summarizes recent advances in polymer‐based flexible sensors for smart agriculture, focusing on polymer substrate design, interface engineering, and applications in soil, plant, animal, aquaculture, and post‐harvest monitoring.
Yihui Li, Zhangzheng Xiao, Zheng Yan, Adnan Raza Altaf, Qun Song, Dingding Yao, Afshan Sohail, Yixin Wang, Wenxiu Ma, Shanjun Li, Yaohui Chen, Peiwen Liu, Kai Zhang   +12 more
wiley   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Detecting defects that reduce breakdown voltage using machine learning and optical profilometry

Scientific Reports
Semiconductor wafer manufacturing relies on the precise control of various performance metrics to ensure the quality and reliability of integrated circuits. In particular, GaN has properties that are advantageous for high voltage and high frequency power
James C. Gallagher, Michael A. Mastro, Alan G. Jacobs, Robert. J. Kaplar, Karl D. Hobart, Travis J. Anderson   +5 more
doaj   +1 more source

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source

Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory. [PDF]

Sci Rep, 2015
El-Atwani O, Norris SA, Ludwig K, Gonderman S, Allain JP.   +4 more
europepmc   +1 more source