Results 111 to 120 of about 12,756,435 (265)

Semiconductors V. 34, I. 02

, 2000
Semiconductors -- February 2000 Volume 34, Issue 2, pp. 123-249 REVIEW Modification of Semiconductors with Proton Beams. A Review V. V. Kozlovskii, V. A. Kozlov, and V. N. Lomasov pp. 123-140 Full Text: PDF (203 kB) ATOMIC STRUCTURE AND

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Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

Advanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies, Bin Han, Paolo Samorì   +2 more
wiley   +1 more source

Investigating the properties of semiconductors solar cells technologies, efficiency for photovoltaic cells and application graphene for solar cells : A review

Solar Compass
The increase in global energy consumption and greenhouse gas emissions over the last century has been related to increased pollution and irreversible damage to important resources.
Ehsan Kianfar, Hasan Koten, Wesam R. Kadhum   +2 more
doaj   +1 more source

Semiconductors V. 37, I. 11

, 2003
Semiconductors -- November 2003 Volume 37, Issue 11, pp. 1243-1362 ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Electronic Structure of Cubic Silicon Carbide with Substitutional 3d Impurities at Si and C Sites N. I. Medvedeva, E. I.

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An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing

Advanced Functional Materials, EarlyView.
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek, Junhwa Oh, Hyeonjung Kim, Minsik Park, Haein Cho, Jin Young Park, Hyeonchang Son, Taeyun Kim, Sung‐Un An, Yamin Zhang, Hyeon‐Jin Shin, Seyong Oh, Dong‐Ho Kang   +12 more
wiley   +1 more source

Semiconductors V. 34, I. 04

, 2000
Semiconductors -- April 2000 Volume 34, Issue 4, pp. 371-494 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Thermodynamics of Complex Formation and Defect Clustering in Semiconductors S. V. Bulyarskii, V. V. Svetukhin, and P. E.

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Blue Upconversion Organic Light‐Emitting Diodes Achieving 1000 cd m−2 With an Operating Voltage of 2.7 V by Suppressing Interfacial Exciton Quenching

Advanced Functional Materials, EarlyView.
A triplet‐blocking layer controls triplet exciton dynamics in blue upconversion OLEDs. The layer keeps charge transfer (CT)‐generated triplet excitons inside the triplet‐triplet annihilation (TTA) host, suppresses anode‐side interfacial quenching, and increases the steady‐state triplet population.
Qing‐Jun Shui, Hiroto Iwasaki, Kosuke Anraku, Ken Albrecht, Yutaka Majima, Seiichiro Izawa   +5 more
wiley   +1 more source

Semiconductors V. 36, I. 07

, 2002
Semiconductors -- July 2002 Volume 36, Issue 7, pp. 717-836 REVIEWS Wannier–Stark Localization in the Natural Superlattice of Silicon Carbide Polytypes V. I. Sankin pp.

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Charge‐Polarized Ni─S4 Single‐Atom Sites Drive Selective Photoreforming of Poly(lactic acid) to Lactate and Hydrogen

Advanced Functional Materials, EarlyView.
Atomically dispersed Ni–S4 sites on CdS nanorods induce interfacial charge polarization, directing photogenerated electrons to H2 evolution and holes to selective ester‐bond cleavage of poly(lactic acid). Without sacrificial reagents, this charge‐coupled system produces lactate while suppressing overoxidation, achieving an H2 evolution rate of 41.74 ...
Yu Yao, Panpan Zhang, Jinqiang Zhang, Xi‐lin Wu, Tara Pukala, Yifei Wang, Bernt Johannessen, Shaobin Wang, Xiaoguang Duan   +8 more
wiley   +1 more source

Review of plasma etching processes for III-V semiconductorsMendeley Data

Micro and Nano Engineering
This paper provides a comprehensive literature review and analysis of III-V semiconductor plasma etching, highlighting key etching considerations and providing literature references to inform future process development. Plasma etching processes for III-V
Alison Clarke, Maxime Darnon, Karin Hinzer, Mathieu de Lafontaine   +3 more
doaj   +1 more source