Results 131 to 140 of about 12,756,435 (265)
, 2004 Semiconductors -- November 2004 Volume 38, Issue 11, pp. 1241-1363 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Effects of Pressure and Hydrogen on the Formation of Vacancies and Divacancies in Crystalline Silicon V.
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Advanced Functional Materials, EarlyView.A removable sacrificial polymer layer engineers the thermal boundary condition during nanosecond laser ablation of PET, suppressing heat‐affected‐zone formation without relying on costly ultrafast lasers. This strategy enables deep, high‐aspect‐ratio trenches with no detectable heat‐affected zone, templating silver‐filled mesh electrodes with record ...
Mehdi Zarei +3 more
wiley +1 more source
, 2002 Semiconductors -- January 2002 Volume 36, Issue 1, pp. 1-120 REVIEW Hopping Conduction via Strongly Localized Impurity States of Indium in PbTe and Its Solid Solutions Yu. I. Ravich and S. A. Nemov pp.
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Advanced Functional Materials, EarlyView.Nitride MXenes remain constrained by a persistent gap between computational prediction and experimental realization. This Review identifies the thermodynamic, kinetic, and chemical barriers limiting their synthesis, critically evaluates emerging fabrication routes, and proposes a multidimensional computational‐experimental framework to accelerate the ...
Naresh Varnakavi, Masoud Soroush
wiley +1 more source
, 2000 Semiconductors -- January 2000 Volume 34, Issue 1, pp. 1-121 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Holmium Redistribution upon Solid-Phase Epitaxial Crystallization of Amorphized Silicon Layers O. V. Aleksandrov, Yu. A.
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Out‐of‐Plane Strain‐Decoupled Architecture for High‐Fill‐Factor Stretchable OLED Displays
Advanced Functional Materials, EarlyView.A vertically decoupled multilayer SOLED architecture separates emissive pixel islands from deformable interconnects, allowing low‐modulus elastomeric layers to accommodate applied strain and suppress strain transfer to the OLED region. This design, combined with transparent hybrid encapsulation, enables a high fill factor (∼75%), stretchability ...
Young Hyun Son +2 more
wiley +1 more source
, 2003 Semiconductors -- August 2003 Volume 37, Issue 8, pp. 867-997 The Role of Dmitrii Nikolaevich Nasledov in the Formation and Development of the Physics and Technology of III–V Semiconductors O. V. Emel'yanenko, N. M. Kolchanova, M. P.
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Full‐Field Damage Monitoring in Architected Lattices Using In situ Electrical Impedance Tomography
Advanced Functional Materials, EarlyView.In situ electrical impedance tomography (EIT) turns 3D‐printed, CNT‐infused architected lattices into full‐field damage‐imaging systems. Tunable Voronoi‐based geometries act as active sensing architectures, enabling conductivity maps to detect early‐stage damage and localise sequential ligament fracture before catastrophic failure.
Akash Deep +4 more
wiley +1 more source
, 2000 Semiconductors -- March 2000 Volume 34, Issue 3, pp. 251-369 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Ultrasound-Induced Surface Hardening of Dislocation-Free Silicon I. V. Ostrovskii, L. P. Steblenko, and A. B. Nadtochii
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Advanced Functional Materials, EarlyView.An organic neuromorphic architecture for the classification of human motor behavior is presented and validated. It performs somatic integration by linearly combining the activity from three muscles. An investigation of synaptic weights is presented and discussed in relationship with the classification performance.
Ilenia Sergi +7 more
wiley +1 more source