Results 141 to 150 of about 12,756,435 (265)
, 1999 Semiconductors -- May 1999 Volume 33, Issue 5, pp. 483-593 REVIEW Induced photopleochroism in semiconductors Review F. P. Kesamanly, V. Yu. Rud', and Yu. V.
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Advanced Functional Materials, EarlyView.A post‐growth method is demonstrated to realize energy‐tunable quantum emitters in GaAs/GaAsN/GaAs core–multishell nanowires on a Si substrate. By combining the N‐induced bandgap reduction with H‐ion irradiation, the GaAsN potential landscape is engineered, enabling isolated, narrow emission lines that function as single‐photon sources with g(2)(0) ∼ 0.
Akant Sagar Sharma +10 more
wiley +1 more source
Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory. [PDF]
Sci Rep, 2015 El-Atwani O +4 more
europepmc +1 more source
, 2001 Semiconductors -- August 2001 Volume 35, Issue 8, pp. 861-979 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Growth of Fractal Lithium Clusters in Germanium S. V. Bulyarskii, V. V. Svetukhin, O. V. Agafonova, A. G. Grishin, and
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Advanced Functional Materials, EarlyView.Solvent‐composition‐controlled film formation enables high‐performance (efficiency = 18.66%) and air‐stable terpene‐processed organic solar cells. An optimized eucalyptol/tetralin ratio of 50:50 (v/v) balances molecular solvation and aggregation kinetics, producing favorable nanoscale phase separation and vertical composition gradients.
Hyerin Jeon +4 more
wiley +1 more source
, 1998 Semiconductors -- June 1998 Volume 32, Issue 6, pp. 573-682 Boris Petrovich Zakharchenya (on his 70th birthday) Full Text: PDF (192 kB) The role of macrodefects in electronic and ionic processes in wide-band II–VI semiconductors B.
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Advanced Functional Materials, EarlyView.Forming‐free epitaxial Pt/La0.5Sr0.5CoOx (LSCO)/La0.5Sr0.5MnO3 (LSMO) memristors exhibit heterogeneous and partially reversible topotactic switching involving brownmillerite (BM)‐, Grenier (GN)‐like‐, and perovskite (PV)‐like configurations. Atomic‐resolution scanning transmission electron microscopy and in situ transmission electron microscopy resolve
Zi‐Qin Hong +5 more
wiley +1 more source
Hybrid density functional study of strain-engineered III-V semiconductors and monolayer InSe. [PDF]
RSC AdvAhmed MT +8 more
europepmc +1 more source
, 1999 Semiconductors -- April 1999 Volume 33, Issue 4, pp. 377-481 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Low-temperature relaxation of a solid solution of iron in gallium phosphide E. S. Demidov, V. V. Karzanov, A.
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Advanced Functional Materials, EarlyView.Poly(acrylic acid) acts as a reaction‐time pH buffer during hydrothermal Sb2(S,Se)3 growth through its COOH/COO‐ equilibrium. When combined with ethanol‐regulated growth, this buffering strategy reduces Sb‐O related surface disorder, improves local electronic uniformity and carrier collection, and increases the champion solar‐cell efficiency to 10.25%,
Juhee Lee +7 more
wiley +1 more source